IRFR8314PbF HEXFET® Power MOSFET Application Optimized for UPS/Inverter Applications Low Voltage Power Tools D G VDSS 30 RDS(on) max (@ VGS = 10V) 2.2 (@ VGS = 4.5V) 3.1 Qg (typical) 40 ID (Silicon Limited) 179 ID (Package Limited) 90A S Benefits Fully Characterized Avalanche Voltage and Current Lead-Free, RoHS Compliant V m nC A D S G D-Pak G Gate Base part number Package Type IRFR8314PbF D-Pak Standard Pack Form Quantity Tape and Reel D Drain S Source Orderable Part Number 2000 IRFR8314TRPbF Absolute Maximum Rating Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 100°C TJ Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) TSTG Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Max. 30 ± 20 179 127 90 357 125 63 0.83 Units V A W W W/°C -55 to + 175 °C 300 Typ. ––– ––– ––– Max. 1.2 50 110 Units °C/W Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 IRFR8314PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 1.2 Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 18 ––– mV/°C Reference to 25°C, ID = 1mA 1.6 2.2 m VGS = 10V, ID = 90A 2.6 3.1 VGS = 4.5V, ID = 72A 1.7 2.2 V VDS = VGS, ID = 100µA VGS(th)/TJ Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG td(on) tr Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– ––– ––– 189 ––– ––– ––– ––– ––– ––– ––– ––– ––– -7.0 ––– ––– ––– ––– ––– 36 10 7.7 10 8.3 20 2.0 19 98 td(off) Turn-Off Delay Time ––– 28 ––– RG= 1.8 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– 30 4945 908 493 ––– ––– ––– ––– VGS = 4.5V VGS = 0V VDS = 15V ƒ = 1.0MHz IGSS Min. 30 ––– ––– ––– ––– mV/°C 1.0 VDS =24 V, VGS = 0V µA 150 VDS =24V,VGS = 0V,TJ =125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID =72A 54 ––– VDS = 15V ––– nC VGS = 4.5V ––– ID = 72A ––– ––– ––– ––– VDD = 15V ––– ns ID = 72A pF Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (tested) Single Pulse Avalanche Energy Tested Value IA Avalanche Current 180 279 72 mJ A Diode Characteristics Symbol Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 179 ––– ––– 357 VSD Diode Forward Voltage ––– ––– 1.0 trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 31 87 47 130 IS ISM 2 www.irf.com © 2014 International Rectifier A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C,IS = 72A,VGS = 0V ns TJ = 25°C IF = 72A ,VDD=15V nC di/dt = 360A/µs Submit Datasheet Feedback July 01, 2014 IRFR8314PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.5V 4.5V 4.0V 3.5V 3.3V 3.0V 2.8V BOTTOM 100 10 2.8V 2.8V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 10 1 0.1 1 10 0.1 100 1000 100 2.0 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics T J = 175°C T J = 25°C 10 1 VDS = 15V 60µs PULSE WIDTH 0.1 1 2 3 4 5 ID = 90A VGS = 10V 1.5 1.0 0.5 6 -60 -40 -20 0 20 40 60 80 100120140160180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 VGS, Gate-to-Source Voltage (V) ID= 72A 10000 Ciss Coss 1000 Fig 4. Normalized On-Resistance vs. Temperature 14 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Crss 100 12 VDS= 24V VDS= 15V 10 8 6 4 2 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V www.irf.com © 2014 International Rectifier 0 20 40 60 80 100 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback July 01, 2014 IRFR8314PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100µsec T J = 175°C 100 T J = 25°C 10 1 100 1msec LIMITED BY PACKAGE 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 180 VGS(th) , Gate threshold Voltage (V) 200 Limited By Package 160 ID, Drain Current (A) DC 140 120 100 80 60 40 2.0 1.5 ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.0 0.5 20 0.0 0 25 50 75 100 125 150 -75 -50 -25 0 175 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 0.1 0.01 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 8 800 ID = 90A 6 4 TJ = 125°C 2 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage 5 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m) IRFR8314PbF www.irf.com © 2014 International Rectifier 20 ID 16A 33A BOTTOM 72A 700 TOP 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Submit Datasheet Feedback July 01, 2014 IRFR8314PbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 15a. Unclamped Inductive Test Circuit Fig 15b. Unclamped Inductive Waveforms Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 17a. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 17b. Gate Charge Waveform Submit Datasheet Feedback July 01, 2014 IRFR8314PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 12 ASSEMBLY LOT CODE 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 IRFR8314PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 IRFR8314PbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† D-Pak Moisture Sensitivity Level MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 72A, VGS =10V. Pulse width 400µs; duty cycle 2%. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ =25°C, L=0.07mH, RG = 50, IAS = 72A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf Revision History Date 07/01/2014 Comments The Device is active without bulk part which is removed from Table on page 1 IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA To contact Interna onal Rec fier, please visit h p://www.irf.com/whoto‐call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 01, 2014