TI1 MUX36S08 36-v, low-capacitance, low-leakage-current, precision, analog multiplexer Datasheet

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MUX36S08, MUX36D04
SBOS705B – JANUARY 2016 – REVISED JULY 2016
MUX36xxx 36-V, Low-Capacitance, Low-Leakage-Current, Precision, Analog Multiplexers
1 Features
3 Description
•
The MUX36S08 and MUX36D04 (MUX36xxx) are
modern complementary metal-oxide semiconductor
(CMOS)
analog
multiplexers
(muxes).
The
MUX36S08 offers 8:1 single-ended channels;
whereas, the MUX36D04 offers differential 4:1 (8:2)
channels. The MUX36S08 and MUX36D04 work
equally well with either dual supplies (±5 V to ±18 V)
or a single supply (10 V to 36 V). They also perform
well with symmetric supplies (such as VDD = 12 V,
VSS = –12 V), and unsymmetric supplies (such as
VDD = 12 V, VSS = –5 V). All digital inputs have TTLlogic compatible thresholds, ensuring both TTL and
CMOS logic compatibility when operating in the valid
supply voltage range.
1
•
•
•
•
•
•
•
•
•
•
•
•
Low On-Capacitance
– MUX36S08: 9.4 pF
– MUX36D04: 6.7 pF
Low Input Leakage: 1 pA
Low Charge Injection: 0.3 pC
Rail-to-Rail Operation
Wide Supply Range: ±5 V to ±18 V, 10 V to 36 V
Low On-Resistance: 125 Ω
Transition Time: 92 ns
Break-Before-Make Switching Action
EN Pin Connectable to VDD
Logic Levels: 2 V to VDD
Low Supply Current: 45 µA
ESD Protection HBM: 2000 V
Industry-Standard TSSOP Package
The MUX36S08 and MUX36D04 have very low on
and off leakage currents, allowing these multiplexers
to switch signals from high input impedance sources
with minimal error. A low supply current of 45 µA
enables use in portable applications.
Device Information(1)
2 Applications
•
•
•
•
•
•
Factory Automation and Industrial Process Control
Programmable Logic Controllers (PLC)
Analog Input Modules
ATE Test Equipment
Digital Multimeters
Battery Monitoring Systems
PART NUMBER
MUX36S08IPW
MUX36D04IPW
PACKAGE
BODY SIZE (NOM)
TSSOP (16)
5.00 mm × 4.40 mm
(1) For all available packages, see the package option addendum
at the end of the data sheet.
Simplified Schematic
Leakage Current vs Temperature
900
ID(ON)+
Bridge Sensor
±
Thermocouple
MUX36D04
ADC
PGA/INA
+
Current
Sensing
VINP
VINM
Leakage Current (pA)
600
ID(OFF)+
300
IS(OFF)+
0
IS(OFF)±
±300
ID(OFF)±
±600
ID(ON)±
Photo
LED Detector
Optical Sensor
±900
±75
±50
±25
0
25
50
75
Temperature (ƒC)
100
125
150
C006
Analog Inputs
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
MUX36S08, MUX36D04
SBOS705B – JANUARY 2016 – REVISED JULY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
1
1
1
2
3
3
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Electrical Characteristics: Dual Supply ..................... 6
Electrical Characteristics: Single Supply................... 8
Typical Characteristics ............................................ 10
Parameter Measurement Information ................ 14
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
8.10
Truth Tables ............................................................
On-Resistance ........................................................
Off-Leakage Current ...............................................
On-Leakage Current ...............................................
Differential On-Leakage Current .............................
Transition Time .......................................................
Break-Before-Make Delay.......................................
Turn-On and Turn-Off Time ....................................
Charge Injection ......................................................
Off Isolation ...........................................................
14
15
15
16
16
17
17
18
19
20
8.11 Channel-to-Channel Crosstalk .............................. 20
8.12 Bandwidth ............................................................. 21
8.13 THD + Noise ......................................................... 21
9
Detailed Description ............................................ 22
9.1
9.2
9.3
9.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
22
22
23
25
10 Applications and Implementation...................... 26
10.1 Application Information.......................................... 26
10.2 Typical Application ............................................... 26
11 Power Supply Recommendations ..................... 28
12 Layout................................................................... 29
12.1 Layout Guidelines ................................................. 29
12.2 Layout Example .................................................... 29
13 Device and Documentation Support ................. 30
13.1
13.2
13.3
13.4
13.5
13.6
13.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
30
30
30
30
30
30
30
14 Mechanical, Packaging, and Orderable
Information ........................................................... 31
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (January 2016) to Revision B
Page
•
Added differential on-leakage current parameter to Electrical Characteristics table ............................................................. 6
•
Added Differential On-Leakage Current section................................................................................................................... 16
Changes from Original (January 2016) to Revision A
•
2
Page
Changed from product preview to production data ................................................................................................................ 1
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SBOS705B – JANUARY 2016 – REVISED JULY 2016
5 Device Comparison Table
PRODUCT
DESCRIPTION
MUX36S08
8-channel, single-ended analog multiplexer (8:1 mux)
MUX36D04
4-channel, differential analog multiplexer (8:2 mux)
6 Pin Configuration and Functions
MUX36S08: PW Package
16-Pin TSSOP
Top View
A0
1
16
A1
EN
2
15
A2
VSS
3
14
GND
S1
4
13
VDD
S2
5
12
S5
S3
6
11
S6
S4
7
10
S7
D
8
9
S8
Pin Functions: MUX36S08
PIN
NAME
NO.
FUNCTION
DESCRIPTION
A0
1
Digital input
Address line 0
A1
16
Digital input
Address line 1
A2
15
Digital input
Address line 2
D
8
EN
2
GND
14
S1
4
Analog input or output Source pin 1. Can be an input or output.
S2
5
Analog input or output Source pin 2. Can be an input or output.
S3
6
Analog input or output Source pin 3. Can be an input or output.
S4
7
Analog input or output Source pin 4. Can be an input or output.
S5
12
Analog input or output Source pin 5. Can be an input or output.
S6
11
Analog input or output Source pin 6. Can be an input or output.
S7
10
Analog input or output Source pin 7. Can be an input or output.
S8
9
Analog input or output Source pin 8. Can be an input or output.
VDD
13
Power supply
Positive power supply. This pin is the most positive power-supply potential. For reliable
operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD
and GND.
VSS
3
Power supply
Negative power supply. This pin is the most negative power-supply potential. In singlesupply applications, this pin can be connected to ground. For reliable operation, connect a
decoupling capacitor ranging from 0.1 µF to 10 µF between VSS and GND.
Analog input or output Drain pin. Can be an input or output.
Digital input
Power supply
Active high digital input. When this pin is low, all switches are turned off. When this pin is
high, the A[2:0] logic inputs determine which switch is turned on.
Ground (0 V) reference
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MUX36D04: PW Package
16-Pin TSSOP
Top View
A0
1
16
A1
EN
2
15
GND
VSS
3
14
VDD
S1A
4
13
S1B
S2A
5
12
S2B
S3A
6
11
S3B
S4A
7
10
S4B
DA
8
9
DB
Pin Functions: MUX36D04
PIN
NAME
NO.
FUNCTION
DESCRIPTION
A0
1
Digital input
Address line 0
A1
16
Digital input
Address line 1
DA
8
Analog input or output Drain pin A. Can be an input or output.
DB
9
Analog input or output Drain pin B. Can be an input or output.
EN
2
GND
15
S1A
4
Analog input or output Source pin 1A. Can be an input or output.
S2A
5
Analog input or output Source pin 2A. Can be an input or output.
S3A
6
Analog input or output Source pin 3A. Can be an input or output.
S4A
7
Analog input or output Source pin 4A. Can be an input or output.
S1B
13
Analog input or output Source pin 1B. Can be an input or output.
S2B
12
Analog input or output Source pin 2B. Can be an input or output.
S3B
11
Analog input or output Source pin 3B. Can be an input or output.
S4B
10
Analog input or output Source pin 4B. Can be an input or output.
VDD
14
Power supply
Positive power supply. This pin is the most positive power supply potential. For reliable
operation, connect a decoupling capacitor ranging from 0.1 µF to 10 µF between VDD
and GND.
VSS
3
Power supply
Negative power supply. This pin is the most negative power supply potential. In singlesupply applications, this pin can be connected to ground. For reliable operation, connect a
decoupling capacitor ranging from 0.1 µF to 10 µF between VSS and GND.
4
Digital input
Power supply
Active high digital input. When this pin is low, all switches are turned off. When this pin is
high, the A[1:0] logic inputs determine which pair of switches is turned on.
Ground (0 V) reference
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Supply voltage
MIN
MAX
VDD
–0.3
40
VSS
–40
0.3
VDD – VSS
Digital input pins (2)
Voltage
EN, A0, A1, A2 pins
Sx, SxA, SxB pins
Analog output pins (2)
D, DA, DB pins
VSS – 0.3
V
mA
–30
30
Voltage
VSS – 2
VDD + 2
V
Current
–30
30
mA
Voltage
VSS – 2
VDD + 2
V
Current
–30
30
mA
–55
150
Junction, TJ
150
Storage, Tstg
(2)
VDD + 0.3
Current
Operating, TA
(1)
V
40
Analog input pins (2)
Temperature
UNIT
–65
°C
150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Only one pin at a time
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
2000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN
Dual supply
NOM
MAX
5
18
10
36
UNIT
VDD (1)
Positive power-supply voltage
VSS (2)
Negative power-supply voltage (dual supply)
–5
–18
V
VDD – VSS
Supply voltage
10
36
V
VS
Source pins voltage (3)
VSS
VDD
V
VD
Drain pins voltage
VSS
VDD
V
VEN
Enable pin voltage
VSS
VDD
V
VA
Address pins voltage
VSS
VDD
ICH
Channel current (TA = 25°C)
–25
25
mA
TA
Operating temperature
–40
125
°C
(1)
(2)
(3)
Single supply
V
V
When VSS = 0 V, VDD can range from 10 V to 36 V.
VDD and VSS can be any value as long as 10 V ≤ (VDD – VSS) ≤ 36 V.
VS is the voltage on all the S pins.
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7.4 Thermal Information
MUX36xxx
THERMAL METRIC (1)
PW (TSSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
103.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
36.8
°C/W
RθJB
Junction-to-board thermal resistance
49.8
°C/W
ψJT
Junction-to-top characterization parameter
2.7
°C/W
ψJB
Junction-to-board characterization parameter
49.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics: Dual Supply
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD
V
ANALOG SWITCH
Analog signal range
TA = –40°C to +125°C
VSS
VS = 0 V, ICH = 1 mA
RON
On-resistance
VS = ±10 V, ICH = 1 mA
125
170
145
200
TA = –40°C to +85°C
230
TA = –40°C to +125°C
250
2.4
ΔRON
On-resistance mismatch
between channels
VS = ±10 V, ICH = 1 mA
On-resistance flatness
On-resistance drift
VS = 10 V, 0 V, –10 V
9
TA = –40°C to +125°C
11
53
TA = –40°C to +125°C
58
VS = 0 V
0.52
Input leakage current
Switch state is off,
VS = ±10 V, VD = ±10 V (1)
ID
–0.15
0.15
–1.9
1.9
TA = –40°C to +125°C
Output leakage current
IDL(ON)
Differential on-leakage
current
Switch state is on,
DA = DB = ±10 V,
S = floating
0.005
0.5
–2
2
0.008
–0.5
0.5
TA = –40°C to +125°C
–3.3
3.3
TA = –40°C to +85°C
–100
100
TA = –40°C to +125°C
–500
500
3
nA
0.1
TA = –40°C to +85°C
–15
nA
0.1
–0.5
–0.1
Switch state is on,
D = ±10 V, S = floating
%/°C
TA = –40°C to +125°C
TA = -40°C to +85°C
Ω
0.04
TA = –40°C to +85°C
–0.1
Switch state is off,
S = ±10 V, D = ±10 V (1)
0.001
Ω
45
TA = –40°C to +85°C
–0.04
IS(OFF)
6
TA = –40°C to +85°C
22
RFLAT
Ω
nA
15
pA
LOGIC INPUT
VIH
Logic voltage high
VIL
Logic voltage low
ID
Input current
(1)
6
2.0
V
0.8
V
0.15
µA
When VS is positive, VD is negative, and vice versa.
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Electrical Characteristics: Dual Supply (continued)
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
88
136
UNIT
SWITCH DYNAMICS (2)
tON
Enable turn-on time
VS = ±10 V, RL = 300 Ω,
CL= 35 pF
TA = –40°C to +85°C
144
TA = –40°C to +125°C
151
63
tOFF
Enable turn-off time
VS = ±10 V, RL = 300 Ω,
CL= 35 pF
tt
Transition time
83
TA = –40°C to +125°C
90
151
TA = –40°C to +125°C
157
Break-before-make time
delay
VS = 10 V, RL = 300 Ω, CL= 35 pF, TA = –40°C to +125°C
QJ
Charge injection
CL = 1 nF, RS = 0 Ω
Off-isolation
VS = 0 V
30
54
±0.6
RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz
Nonadjacent channel to D, DA, DB
–96
Adjacent channel to D, DA, DB
–85
Channel-to-channel
crosstalk
RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz
Nonadjacent channels
–96
Adjacent channels
–88
Input off-capacitance
f = 1 MHz, VS = 0 V
CD(OFF)
Output off-capacitance
f = 1 MHz, VS = 0 V
CS(ON),
CD(ON)
Output on-capacitance
f = 1 MHz, VS = 0 V
ns
ns
0.3
VS = –15 V to +15 V
ns
143
TA = –40°C to +85°C
tBBM
CS(OFF)
75
TA = –40°C to +85°C
92
VS = 10 V, RL = 300 Ω,
CL= 35 pF,
ns
pC
dB
dB
2.4
2.9
MUX36S08
7.5
8.4
MUX36D04
4.3
5
MUX36S08
9.4
10.6
MUX36D04
6.7
7.7
45
59
pF
pF
pF
POWER SUPPLY
VDD supply current
All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V,
TA = –40°C to +85°C
62
TA = –40°C to +125°C
83
25
VSS supply current
(2)
All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V,
µA
34
TA = –40°C to +85°C
37
TA = –40°C to +125°C
57
µA
Specified by design, not subject to production testing.
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7.6 Electrical Characteristics: Single Supply
at TA = 25°C, VDD = 12 V, and VSS = 0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDD
V
ANALOG SWITCH
Analog signal range
TA = –40°C to +125°C
VSS
235
RON
On-resistance
VS = 10 V, ICH = 1 mA
TA = –40°C to +85°C
390
TA = –40°C to +125°C
430
3.1
ΔRON
On-resistance match
On-resistance drift
IS(OFF)
ID
Input leakage current
VS = 10 V, ICH = 1 mA
340
12
TA = –40°C to +85°C
19
TA = –40°C to +125°C
23
VS = 0 V
0.47
–-0.04
0.001
%/°C
TA = –40°C to +85°C
–0.15
0.15
TA = –40°C to +125°C
–1.9
1.9
Switch state is off,
VS = 1 V and VD = 10 V,
or VS = 10 V and VD = 1 V (1)
TA = –40°C to +85°C
Switch state is on,
D = 1 V and 10 V,
S = floating
TA = –40°C to +85°C
–0.5
0.5
TA = –40°C to +125°C
–3.3
3.3
Output leakage current
TA = –40°C to +125°C
0.005
0.5
–2
2
0.008
nA
0.1
–0.5
–0.1
Ω
0.04
Switch state is off,
VS = 1 V and VD = 10 V,
or VS = 10 V and VD = 1 V (1)
–0.1
Ω
nA
0.1
nA
LOGIC INPUT
VIH
Logic voltage high
VIL
Logic voltage low
ID
Input current
2.0
V
0.8
V
0.15
µA
SWITCH DYNAMIC CHARACTERISTICS (2)
85
tON
Enable turn-on time
VS = 8 V, RL = 300 Ω,
CL= 35 pF
145
TA = –40°C to +125°C
149
48
tOFF
Enable turn-off time
VS = 8 V, RL = 300 Ω,
CL= 35 pF
94
TA = –40°C to +125°C
102
Transition time
87
TA = –40°C to +85°C
153
VS = 8 V, RL = 300 Ω,
CL= 35 pF,
TA = –40°C to +125°C
155
Break-before-make time
delay
VS = 8 V, RL = 300 Ω, CL= 35 pF, TA = –40°C to +125°C
QJ
Charge injection
CL = 1 nF, RS = 0 Ω
Off-isolation
RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz
Nonadjacent channel to D, DA, DB
-96
Adjacent channel to D, DA, DB
-85
Channel-to-channel
crosstalk
RL = 50 Ω, VS = 1 VRMS,
f = 1 MHz
Nonadjacent channels
–96
Adjacent channels
-88
Input off-capacitance
f = 1 MHz, VS = 6 V
CS(OFF)
CD(OFF)
Output off-capacitance
f = 1 MHz, VS = 6 V
CS(ON),
CD(ON)
Output on-capacitance
f = 1 MHz, VS = 6 V
(1)
(2)
8
30
54
VS = 6 V
0.15
VS = 0 V to 12 V,
±0.4
ns
147
VS = 8 V, RL = 300 Ω,
CL= 35 pF,
tBBM
ns
83
TA = –40°C to +85°C
VS = 8 V, CL= 35 pF
tt
140
TA = –40°C to +85°C
ns
ns
pC
dB
dB
2.7
3.2
MUX36S08
9.1
10
MUX36D04
5
5.7
MUX36S08
10.8
12
MUX36D04
6.9
8
pF
pF
pF
When VS is 1 V, VD is 10 V, and vice versa.
Specified by design; not subject to production testing.
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Electrical Characteristics: Single Supply (continued)
at TA = 25°C, VDD = 12 V, and VSS = 0 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
42
53
UNIT
POWER SUPPLY
VDD supply current
All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V
TA = –40°C to +85°C
56
TA = –40°C to +125°C
77
23
VSS supply current
All VA = 0 V or 3.3 V,
VS = 0 V, VEN = 3.3 V
38
TA = –40°C to +85°C
31
TA = –40°C to +125°C
51
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µA
µA
9
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7.7 Typical Characteristics
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
250
250
TA = 125ƒC
VDD = 13.5 V VDD = 15 V
VSS = ±13.5 V VSS = ±15 V
150
100
50
VDD = 18 V
VSS = ±18 V
TA = 85ƒC
200
On Resistance (Ÿ)
On Resistance (Ÿ)
200
150
TA = 25ƒC
100
50
VDD = 16.5 V
VSS = ±16.5 V
TA = ±40ƒC
TA = 0ƒC
0
0
±20
±15
±10
±5
0
5
10
15
Source or Drain Voltage (V)
20
±18
±12
0
±6
6
12
Source or Drain Voltage (V)
C001
18
C002
VDD = 15 V, VSS = –15 V
Figure 1. On-Resistance vs Source or Drain Voltage
Figure 2. On-Resistance vs Source or Drain Voltage
700
700
VDD = 5 V
VSS = ±5 V
600
VDD = 6 V
VSS = ±6 V
500
On Resistance (Ÿ)
On Resistance (Ÿ)
600
400
300
200
VDD = 7 V
VSS = ±7 V
100
500
TA = 85ƒC
TA = 125ƒC
400
300
TA = 25ƒC
200
100
TA = 0ƒC
TA = ±40ƒC
0
0
±8
±6
±4
±2
0
2
4
6
Source or Drain Voltage (V)
0
8
2
4
6
8
10
Source or Drain Voltage (V)
C003
12
C004
VDD = 12 V, VSS = 0 V
Figure 3. On-Resistance vs Source or Drain Voltage
Figure 4. On-Resistance vs Source or Drain Voltage
700
250
VDD = 30 V
VSS = 0 V
On Resistance (Ÿ)
On Resistance (Ÿ)
200
150
100
50
VDD = 36 V
VSS = 0 V
VDD = 33 V
VSS = 0 V
VDD = 12 V
VSS = 0 V
500
400
VDD = 14 V
VSS = 0 V
300
200
100
0
0
0
6
12
18
24
Source or Drain Voltage (V)
30
36
0
2
4
6
8
10
Source or Drain Voltage (V)
C023
Figure 5. On-Resistance vs Source or Drain Voltage
10
VDD = 10 V
VSS = 0 V
600
12
14
C005
Figure 6. On-Resistance vs Source or Drain Voltage
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Typical Characteristics (continued)
250
250
200
200
On Resistance (Ÿ)
On Resistance (Ÿ)
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
150
100
150
100
50
50
0
0
0
6
12
18
24
Source or Drain Voltage (V)
±12
0
±6
6
VDD = 24 V, VSS = 0 V
C024
VDD = 12 V, VSS = –12 V
Figure 7. On-Resistance vs Source or Drain Voltage
Figure 8. On-Resistance vs Source or Drain Voltage
900
900
ID(ON)+
ID(ON)+
600
Leakage Current (pA)
600
Leakage Current (pA)
12
Source or Drain Voltage (V)
C029
ID(OFF)+
300
IS(OFF)+
0
IS(OFF)±
±300
ID(OFF)±
±600
IS(OFF)+
300
ID(OFF)+
0
±300
IS(OFF)±
ID(OFF)±
±600
ID(ON)±
ID(ON)±
±900
±900
±75
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
150
±75
±50
±25
25
50
75
100
125
150
Temperature (ƒC)
VDD = 15 V, VSS = –15 V
C007
VDD = 12 V, VSS = 0 V
Figure 9. Leakage Current vs Temperature
Figure 10. Leakage Current vs Temperature
2
2
VDD = 15 V
VSS = ±15 V
1
Charge Injection (pC)
Charge Injection (pC)
0
C006
0
VDD = 10 V
VSS = ±10 V
±1
VDD = 12 V
VSS = 0 V
1
VDD = 15 V
VSS = ±15 V
0
VDD = 10 V
VSS = ±10 V
±1
VDD = 12 V
VSS = 0 V
±2
±2
±15
±10
±5
0
5
10
Source Voltage (V)
MUX36S08, source-to-drain
Figure 11. Charge Injection vs Source Voltage
15
±15
±10
±5
0
5
10
Source Voltage (V)
C008
15
C025
MUX36D04, source-to-drain
Figure 12. Charge Injection vs Source Voltage
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Typical Characteristics (continued)
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
9
VDD = 15 V
VSS = ±15 V
6
Charge Injection (pC)
Turn On and Turn Off Times (ns)
150
VDD = 10 V
VSS = ±10 V
3
0
VDD = 12 V
VSS = 0 V
±3
±6
tON (VDD = 15 V, VSS = ±15 V)
120
tON (VDD = 12 V, VSS = 0 V)
90
60
30
tOFF (VDD = 15 V, VSS = ±15 V)
tOFF (VDD = 12 V, VSS = 0 V)
0
±9
±15
±10
0
±5
5
10
Drain voltage (V)
15
±75
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
C011
150
C010
Drain-to-source
Figure 14. Turn-On and Turn-Off Times vs Temperature
0
0
±20
±20
Adjacent Channel to D (Output)
±40
Adjacent Channels
±40
Crosstalk (dB)
Off Isolation (dB)
Figure 13. Charge Injection vs Source or Drain Voltage
±60
±80
±60
±80
±100
±100
±120
Non-Adjacent Channels
±120
Non-Adjacent Channel to D (Output)
±140
±140
10k
100k
1M
10M
100M
Frequency (Hz)
1G
10k
10M
100M
1G
C013
Figure 16. Crosstalk vs Frequency
100
3
VDD = 15 V
VSS = ±15 V
On Response (dB)
10
THD+N (%)
1M
Frequency (Hz)
Figure 15. Off Isolation vs Frequency
VDD = 5 V
VSS = ±5 V
1
0.1
0
±3
±6
0.01
10
100
1k
10k
Frequency (Hz)
100k
±9
100k
1M
10M
100M
Frequency (Hz)
C014
Figure 17. THD+N vs Frequency
12
100k
C012
1G
C018
Figure 18. On Response vs Frequency
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Typical Characteristics (continued)
18
18
15
15
Capacitance (pF)
Capacitance (pF)
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
12
CD(ON)
9
6
CD(OFF)
9
CD(ON)
6
CD(OFF)
CS(OFF)
3
12
3
CS(OFF)
0
0
±15
±10
±5
0
5
10
Source Voltage (V)
15
±15
±5
0
5
10
Source or Drain Voltage (V)
MUX36S08, VDD = 15 V, VSS = –15 V
15
C026
MUX36D04, VDD = 15 V, VSS = –15 V
Figure 19. Capacitance vs Source Voltage
Figure 20. Capacitance vs Source Voltage
18
18
15
15
Capacitance (pF)
Capacitance (pF)
±10
C015
12
CD(ON)
9
6
12
CD(OFF)
9
CD(ON)
6
CD(OFF)
CS(OFF)
3
3
0
CS(OFF)
0
0
5
10
15
20
25
Source Voltage (V)
30
0
10
15
20
25
Source or Drain Voltage (V)
MUX36S08, VDD = 30 V, VSS = 0 V
30
C028
MUX36D04, VDD = 30 V, VSS = 0 V
Figure 21. Capacitance vs Source Voltage
Figure 22. Capacitance vs Source Voltage
18
18
15
15
CD(ON)
12
Capacitance (pF)
Capacitance (pF)
5
C016
9
6
CD(OFF)
CS(OFF)
3
12
CD(OFF)
9
CD(ON)
6
3
CS(OFF)
0
0
0
3
6
9
Source or Drain Voltage (V)
MUX36S08, VDD = 12 V, VSS = 0 V
Figure 23. Capacitance vs Source Voltage
12
0
3
6
9
Source or Drain Voltage (V)
C022
12
C027
MUX36D04, VDD = 12 V, VSS = 0 V
Figure 24. Capacitance vs Source Voltage
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Typical Characteristics (continued)
at TA = 25°C, VDD = 15 V, and VSS = –15 V (unless otherwise noted)
25
20
Drain Current (mA)
15
10
5
0
±5
±10
±15
±20
±25
±25
±20
±15
±10
±5
0
5
10
15
20
Source Current (mA)
25
C021
Figure 25. Source Current vs Drain Current
8 Parameter Measurement Information
8.1 Truth Tables
Table 1 and Table 2 show the truth tables for the MUX36S08 and MUX36D04, respectively.
Table 1. MUX36S08 Truth Table
(1)
EN
A2
A1
A0
STATE
0
X (1)
X (1)
X (1)
All channels are off
1
0
0
0
Channel 1
1
0
0
1
Channel 2
1
0
1
0
Channel 3
1
0
1
1
Channel 4
1
1
0
0
Channel 5
1
1
0
1
Channel 6
1
1
1
0
Channel 7
1
1
1
1
Channel 8
X denotes don't care..
Table 2. MUX36D04 Truth Table
EN
0
(1)
14
A1
A0
(1)
(1)
X
X
STATE
All channels are off
1
0
0
Channels 1A and 1B
1
0
1
Channels 2A and 2B
1
1
0
Channels 3A and 3B
1
1
1
Channels 4A and 4B
X denotes don't care.
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8.2 On-Resistance
The on-resistance of the MUX36xxx is the ohmic resistance across the source (Sx, SxA, or SxB) and drain (D,
DA, or DB) pins of the device. The on-resistance varies with input voltage and supply voltage. The symbol RON is
used to denote on-resistance. The measurement setup used to measure RON is shown in Figure 26. Voltage (V)
and current (ICH) are measured using this setup, and RON is computed as shown in Equation 1:
V
D
S
ICH
VS
Figure 26. On-Resistance Measurement Setup
RON = V / ICH
(1)
8.3 Off-Leakage Current
There are two types of leakage currents associated with a switch during the off state:
1. Source off-leakage current
2. Drain off-leakage current
Source leakage current is defined as the leakage current flowing into or out of the source pin when the switch is
off. It is denoted by the symbol IS(OFF).
Drain leakage current is defined as the leakage current flowing into or out of the drain pin when the switch is off.
It is denoted by the symbol ID(OFF).
The setup used to measure both off-leakage currents is shown in Figure 27
ID (OFF)
Is (OFF)
A
S
D
VS
A
VD
Figure 27. Off-Leakage Measurement Setup
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8.4 On-Leakage Current
On-leakage current is defined as the leakage current that flows into or out of the drain pin when the switch is in
the on state. The source pin is left floating during the measurement. Figure 28 shows the circuit used for
measuring the on-leakage current, denoted by ID(ON).
ID (ON)
D
S
A
NC
NC = No Connection
VD
Figure 28. On-Leakage Measurement Setup
8.5 Differential On-Leakage Current
In case of a differential signal, the on-leakage current is defined as the differential leakage current that flows into
or out of the drain pins when the switches is in the on state. The source pins are left floating during the
measurement. Figure 29 shows the circuit used for measuring the on-leakage current on each signal path,
denoted by IDA(ON) and IDB(ON). The absolute difference between these two current is defined as the differential
on-leakage current IDL(ON).
IDA(ON)
SxA
DA
A
NC
IDB(ON)
DB
SxB
A
NC
VD
NC = No Connection
Figure 29. Differential On-Leakage Measurement Setup
16
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8.6 Transition Time
Transition time is defined as the time taken by the output of the MUX36xxx to rise or fall to 90% of the transition
after the digital address signal has fallen or risen to 50% of the transition. Figure 30 shows the setup used to
measure transition time, denoted by the symbol tt.
VDD
VSS
VDD
VSS
3V
Address
Signal (VIN)
50%
50%
S1
VS1
A0
3V
A1
VIN
tt
S2-S7
A2
tt
VS8
S8
VS1
90%
Output
MUX36S08
Output
2V
EN
D
GND
300 Ÿ
35 pF
90%
VS8
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Figure 30. Transition-Time Measurement Setup
8.7 Break-Before-Make Delay
Break-before-make delay is a safety feature that prevents two inputs from connecting when the MUX36xxx is
switching. The MUX36xxx output first breaks from the on-state switch before making the connection with the next
on-state switch. The time delay between the break and the make is known as break-before-make delay.
Figure 31 shows the setup used to measure break-before-make delay, denoted by the symbol tBBM.
VDD
VSS
VDD
VSS
3V
Address
Signal (VIN)
S1
VS
A0
0V
A1
VIN
S2-S7
A2
S8
Output
80%
Output
MUX36S08
80%
2V
EN
D
GND
300 Ÿ
35 pF
tBBM
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Figure 31. Break-Before-Make Delay Measurement Setup
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8.8 Turn-On and Turn-Off Time
Turn-on time is defined as the time taken by the output of the MUX36xxx to rise to a 90% final value after the
enable signal has risen to a 50% final value. Figure 32 shows the setup used to measure turn-on time. Turn-on
time is denoted by the symbol tON.
Turn off time is defined as the time taken by the output of the MUX36xxx to fall to a 10% initial value after the
enable signal has fallen to a 50% initial value. Figure 32 shows the setup used to measure turn-off time. Turn-off
time is denoted by the symbol tOFF.
VDD
VSS
VDD
VSS
3V
Enable
Drive (VIN)
50%
50%
S1
A0
VS
A1
S2-S8
0V
A2
tOFF (EN)
tON (EN)
MUX36S08
0.9 VS
Output
Output
D
EN
GND
0.1 VS
VIN
300 Ÿ
35 pF
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Figure 32. Turn-On and Turn-Off Time Measurement Setup
18
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8.9 Charge Injection
The MUX36xxx have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and
PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate
signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is
denoted by the symbol QINJ. Figure 33 shows the setup used to measure charge injection.
VSS
VDD
VDD
VSS
A0
3V
A1
VEN
A2
MUX36S08
RS
S
D
VOUT
EN
VOUT
VOUT
CL
1 nF
VS
GND
QINJ = CL ×
VOUT
VEN
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Figure 33. Charge-Injection Measurement Setup
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8.10 Off Isolation
Off isolation is defined as the voltage at the drain pin (D, DA, or DB) of the MUX36xxx when a 1-VRMS signal is
applied to the source pin (Sx, SxA, or SxB) of an off-channel. Figure 34 shows the setup used to measure off
isolation. Use Equation 2 to compute off isolation.
VDD
VSS
0.1 µF
0.1 µF
Network Analyzer
VSS
VDD
50
S
50 Ÿ
VS
D
VOUT
RL
50 Ÿ
GND
Figure 34. Off Isolation Measurement Setup
Off Isolation
§V
·
20 ˜ Log ¨ OUT ¸
V
© S ¹
(2)
8.11 Channel-to-Channel Crosstalk
Channel-to-channel crosstalk is defined as the voltage at the source pin (Sx, SxA, or SxB) of an off-channel,
when a 1-VRMS signal is applied at the source pin of an on-channel. Figure 35 shows the setup used to measure,
and Equation 3 is the equation used to compute, channel-to-channel crosstalk.
VSS
VDD
0.1 µF
0.1 µF
VSS
VDD
Network Analyzer
VOUT
S1
RL
50 Ÿ
R
50 Ÿ
S2
VS
GND
Figure 35. Channel-to-Channel Crosstalk Measurement Setup
Channel-to-Channel Crosstalk
20
§V
·
20 ˜ Log ¨ OUT ¸
© VS ¹
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8.12 Bandwidth
Bandwidth is defined as the range of frequencies that are attenuated by < 3 dB when the input is applied to the
source pin of an on-channel, and the output is measured at the drain pin of the MUX36xxx. Figure 36 shows the
setup used to measure bandwidth of the mux. Use Equation 4 to compute the attenuation.
VSS
VDD
0.1 µF
0.1 µF
VSS
VDD
Network Analyzer
V1
50
S
VS
V2
D
VOUT
RL
50 Ÿ
GND
Figure 36. Bandwidth Measurement Setup
Attenuation
§V ·
20 ˜ Log ¨ 2 ¸
© V1 ¹
(4)
8.13 THD + Noise
The total harmonic distortion (THD) of a signal is a measurement of the harmonic distortion, and is defined as the
ratio of the sum of the powers of all harmonic components to the power of the fundamental frequency at the mux
output. The on-resistance of the MUX36xxx varies with the amplitude of the input signal and results in distortion
when the drain pin is connected to a low-impedance load. Total harmonic distortion plus noise is denoted as
THD+N. Figure 37 shows the setup used to measure THD+N of the MUX36xxx.
VSS
VDD
0.1µF
0.1µF
AUDIO PRECISION
VSS
VDD
RS
S
IN
VS
VIN
D
V p-p
VOUT
RL
10NŸ
GND
Figure 37. THD+N Measurement Setup
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9 Detailed Description
9.1 Overview
The MUX36xxx are a family of analog multiplexers. The Functional Block Diagram section provides a top-level
block diagram of both the MUX36S08 and MUX36D04. The MUX36S08 is an 8-channel, single-ended, analog
mux. The MUX36D04 is a 4-channel, differential, analog mux. Each channel is turned on or turned off based on
the state of the address lines and enable pin.
9.2 Functional Block Diagram
MUX36D04
MUX36S08
S1
S1A
S2
S2A
S3
S3A
S4
S4A
DA
S5
S1B
DB
S6
S2B
S7
S3B
S8
S4B
D
1-of-4
Decoder
1-of-8
Decoder
A0
A1
A2
EN
A0
A1
EN
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9.3 Feature Description
9.3.1 Ultralow Leakage Current
The MUX36xxx provide extremely low on- and off-leakage currents. The MUX36xxx are capable of switching
signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error
because of the ultralow leakage currents. Figure 38 shows typical leakage currents of the MUX36xxx versus
temperature.
900
ID(ON)+
Leakage Current (pA)
600
ID(OFF)+
300
IS(OFF)+
0
IS(OFF)±
±300
ID(OFF)±
±600
ID(ON)±
±900
±75
±50
±25
0
25
50
75
100
125
150
Temperature (ƒC)
C006
Figure 38. Leakage Current vs Temperature
9.3.2 Ultralow Charge Injection
The MUX36xxx have a simple transmission gate topology, as shown in Figure 39. Any mismatch in the stray
capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is
opened or closed.
OFF ON
CGSN
CGDN
S
D
CGSP
CGDP
OFF ON
Figure 39. Transmission Gate Topology
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Feature Description (continued)
The MUX36xxx have special charge-injection cancellation circuitry that reduces the source-to-drain charge
injection to as low as 0.3 pC at VS = 0 V, and ±0.6 pC in the full signal range, as shown in Figure 40.
Charge Injection (pC)
2
1
VDD = 15 V
VSS = ±15 V
0
VDD = 10 V
VSS = ±10 V
±1
VDD = 12 V
VSS = 0 V
±2
±15
±10
±5
0
5
10
Source Voltage (V)
15
C025
Figure 40. Source-to-Drain Charge Injection vs Source or Drain Voltage
The drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux),
where D becomes the input and Sx becomes the output. Figure 41 shows the drain-to-source charge injection
across the full signal range.
9
VDD = 15 V
VSS = ±15 V
Charge Injection (pC)
6
VDD = 10 V
VSS = ±10 V
3
0
VDD = 12 V
VSS = 0 V
±3
±6
±9
±15
±10
±5
0
5
10
Drain voltage (V)
15
C011
Figure 41. Drain-to-Source Charge Injection vs Source or Drain Voltage
9.3.3 Bidirectional Operation
The MUX36xxx are operable as both a mux and demux. The source (Sx, SxA, SxB) and drain (D, DA, DB) pins
of the MUX36xxx are used either as input or output. Each MUX36xxx channel has very similar characteristics in
both directions.
24
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Feature Description (continued)
9.3.4 Rail-to-Rail Operation
The valid analog signal for the MUX36xxx ranges from VSS to VDD. The input signal to the MUX36xxx swings
from VSS to VDD without any significant degradation in performance. The on-resistance of the MUX36xxx varies
with input signal, as shown in Figure 42
250
VDD = 13.5 V VDD = 15 V
VSS = ±13.5 V VSS = ±15 V
On Resistance (Ÿ)
200
150
100
50
VDD = 18 V
VSS = ±18 V
VDD = 16.5 V
VSS = ±16.5 V
0
±20
±15
±10
±5
0
5
10
15
Source or Drain Voltage (V)
20
C001
Figure 42. On-Resistance vs Source or Drain Voltage
9.4 Device Functional Modes
When the EN pin of the MUX36xxx is pulled high, one of the switches is closed based on the state of the
address lines. When the EN pin is pulled low, all the switches are in an open state irrespective of the state of the
address lines. The EN pin can be connected to VDD (as high as 36 V).
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10 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The MUX36xxx family offers outstanding input/output leakage currents and ultralow charge injection. These
devices operate up to 36 V, and offer true rail-to-rail input and output. The on-capacitance of the MUX36xxx is
very low. These features makes the MUX36xxx a family of precision, robust, high-performance analog
multiplexer for high-voltage, industrial applications.
10.2 Typical Application
Figure 43 shows a 16-bit, differential, 4-channel, multiplexed, data-acquisition system. This example is typical in
industrial applications that require low distortion and a high-voltage differential input. The circuit uses the
ADS8864, a 16-bit, 400-kSPS successive-approximation-resistor (SAR) analog-to-digital converter (ADC), along
with a precision, high-voltage, signal-conditioning front end, and a 4-channel differential mux. This TI Precision
Design details the process for optimizing the precision, high-voltage, front-end drive circuit using the MUX36D04,
OPA192 and OPA140 to achieve excellent dynamic performance and linearity with the ADS8864.
Analog Inputs
REF3140
Bridge Sensor
Thermocouple
MUX36D04
OPA192
+
Photo
Detector
+
Gain Network
High-Voltage Multiplexed Input
RC Filter
Reference Driver
REF
OPA192
Gain Network
Current Sensing
LED
OPA350
+
OPA192
Optical Sensor
Gain Network
Gain Network
RC Filter
High-Voltage Level Translation
VINP
Antialiasing
Filter
ADS8864
VINM
VCM
Copyright © 2016, Texas Instruments Incorporated
Figure 43. 16-Bit Precision Multiplexed Data-Acquisition System for High-Voltage Inputs With Lowest
Distortion
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Typical Application (continued)
10.2.1 Design Requirements
The primary objective is to design a ±20 V, differential, 4-channel, multiplexed, data-acquisition system with
lowest distortion using the 16-bit ADS8864 at a throughput of 400 kSPS for a 10-kHz, full-scale, pure, sine-wave
input. The design requirements for this block design are:
• System supply voltage: ±15 V
• ADC supply voltage: 3.3 V
• ADC sampling rate: 400 kSPS
• ADC reference voltage (REFP): 4.096 V
• System input signal: A high-voltage differential input signal with a peak amplitude of 20 V and frequency
(fIN) of 10 kHz are applied to each differential input of the mux.
10.2.2 Detailed Design Procedure
The purpose of this precision design is to design an optimal, high-voltage, multiplexed, data-acquisition system
for highest system linearity and fast settling. The overall system block diagram is illustrated in Figure 43. The
circuit is a multichannel, data-acquisition signal chain consisting of an input low-pass filter, mux, mux output
buffer, attenuating SAR ADC driver, and the reference driver. The architecture allows fast sampling of multiple
channels using a single ADC, providing a low-cost solution. This design systematically approaches each analog
circuit block to achieve a 16-bit settling for a full-scale input stage voltage and linearity for a 10-kHz sinusoidal
input signal at each input channel.
For step-by-step design procedure, circuit schematics, bill of materials, PCB files, simulation results, and test
results, refer to TI Precision Design TIPD151, 16-Bit, 400-kSPS, 4-Channel Multiplexed Data-Acquisition
System for High-Voltage Inputs with Lowest Distortion.
10.2.3 Application Curve
1.0
Integral Non-Linearity (LSB)
0.8
0.6
0.4
0.2
0.0
±0.2
±0.4
±0.6
±0.8
±1.0
±20
±15
±10
±5
0
5
10
15
ADC Differential Peak-to-Peak Input (V)
20
C030
Figure 44. ADC 16-Bit Linearity Error for the Multiplexed Data-Acquisition Block
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11 Power Supply Recommendations
The MUX36xxx operates across a wide supply range of ±5 V to ±18 V (10 V to 36 V in single-supply mode).
They also perform well with unsymmetric supplies such as VDD = 12 V and VSS= –5 V. For reliable operation, use
a supply decoupling capacitor ranging between 0.1 µF to 10 µF at both the VDD and VSS pins to ground.
The on-resistance of the MUX36xxx varies with supply voltage, as illustrated in Figure 45
250
VDD = 13.5 V VDD = 15 V
VSS = ±13.5 V VSS = ±15 V
On Resistance (Ÿ)
200
150
100
50
VDD = 18 V
VSS = ±18 V
VDD = 16.5 V
VSS = ±16.5 V
0
±20
±15
±10
±5
0
5
10
15
Source or Drain Voltage (V)
20
C001
Figure 45. On-Resistance Variation With Supply and Input Voltage
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12 Layout
12.1 Layout Guidelines
Figure 46 illustrates an example of a PCB layout with the MUX36S08IPW, and Figure 47 illustrates an example
of a PCB layout with MUX36D04IPW.
Some key considerations are:
1. Decouple the VDD and VSS pins with a 0.1-µF capacitor, placed as close to the pin as possible. Make sure
that the capacitor voltage rating is sufficient for the VDD and VSS supplies.
2. Keep the input lines as short as possible. In case of the differential signal, make sure the A inputs and B
inputs are as symmetric as possible.
3. Use a solid ground plane to help distribute heat and reduce electromagnetic interference (EMI) noise pickup.
4. Do not run sensitive analog traces in parallel with digital traces. Avoid crossing digital and analog traces if
possible, and only make perpendicular crossings when necessary.
C
AO
A1
A2
AO
Via to
ground plane
EN
12.2 Layout Example
A1
EN
A2
VSS
GND
S1
Via to
ground plane
MUX36S08 IPW
C
V DD
S2
S5
S3
S6
S4
S7
D
S8
Figure 46. MUX36S08IPW Layout Example
C
AO
A1
EN
GND
C
VDD
VSS
S 1A
Via to
ground plane
A1
AO
Via to
ground plane
EN
Via to
ground plane
MUX36D04 IPW
S 1B
S 2A
S 2B
S 3A
S 3B
S 4A
S 4B
DA
DB
Figure 47. MUX36D04IPW Layout Example
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
• ADS8664 12-Bit, 500-kSPS, 4- and 8-Channel, Single-Supply, SAR ADCs with Bipolar Input Ranges data
sheet (SBAS492)
• OPA140 High-Precision, Low-Noise, Rail-to-Rail Output, 11-MHz JFET Op Amp data sheet (SBOS498)
• OPA192 36-V, Precision, Rail-to-Rail Input/Output, Low Offset Voltage, Low Input Bias Current Op Amp with
e-Trim™ data sheet (SBOS620)
13.2 Related Links
Table 3 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 3. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
MUX36S08
Click here
Click here
Click here
Click here
Click here
MUX36D04
Click here
Click here
Click here
Click here
Click here
13.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
13.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
30
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14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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31
PACKAGE OPTION ADDENDUM
www.ti.com
24-Apr-2018
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
MUX36D04IPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUXD04C
MUX36D04IPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUXD04C
MUX36D04IRUMR
PREVIEW
WQFN
RUM
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUX
36D04
MUX36S08IPW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUXS08B
MUX36S08IPWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUXS08B
MUX36S08IRUMR
PREVIEW
WQFN
RUM
16
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
MUX
36S08
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
24-Apr-2018
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
9-May-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
MUX36D04IPWR
TSSOP
PW
16
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
MUX36S08IPWR
TSSOP
PW
16
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
9-May-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
MUX36D04IPWR
TSSOP
PW
16
2000
367.0
367.0
35.0
MUX36S08IPWR
TSSOP
PW
16
2000
367.0
367.0
35.0
Pack Materials-Page 2
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