Taychipst MBRA150T3 Chip schottky barrier diode Datasheet

MBRA120T3 THRU MBRA1100T3
20V-100V 1.0A
CHIP SCHOTTKY BARRIER DIODES
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
MECHANICAL DATA
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
1.0
A
IFSM
30
A
0.5
mA
10
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
Storage temperature
MARKING
CODE
*1
V RMS
*2
VR
*3
(V)
(V)
(V)
MBRA120T3
SS12
20
14
20
MBRA130T3
SS13
30
21
30
MBRA140T3
SS14
40
28
40
MBRA150T3
SS15
50
35
50
MBRA160T3
SS16
60
42
60
MBRA180T3
SS18
80
56
80
MBRA1100T3
S110
100
70
100
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VF
*4
120
-55
mA
o
88
CJ
TSTG
V RRM
TYP.
IR
VR = VRRM TA = 125o C
Thermal resistance
SYMBOLS
MIN.
C / w
pF
+150
o
C
Operating
temperature
(V)
(o C)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
*2 RMS voltage
-55 to +150
0.85
1 of 2
*3 Continuous reverse voltage
*4 Maximum forward voltage
Web Site: www.taychipst.com
MBRA120T3 THRU MBRA1100T3
20V-100V 1.0A
CHIP SCHOTTKY BARRIER DIODES
RATINGS AND CHARACTERISTIC CURVES
MBRA120T3 THRU MBRA1100T3
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
0
0
0
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
M
BR
A1
20
~M
BR
A
10
A1
4
A1
BR
~M
0.2
R
MB
0~
20
15
A1
0.4
10
M
BR
A1
50
~M
BR
A1
60
RA
MB
0.6
INSTANTANEOUS FORWARD CURRENT,(A)
0.8
14
0
50
1.0
R
MB
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
1.2
3.0
1.0
BR
M
A1
80
BR
~M
10
A1
0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
30
.01
24
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
18
8.3ms Single Half
Tj=25 C
Sine Wave
12
JEDEC method
6
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
Tj=75 C
.1
Tj=25 C
50
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
2 of 2
Web Site: www.taychipst.com
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