IRF IRGSL6B60KD Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

PD - 95229
IRGB6B60KDPbF
IRGS6B60KD
IRGSL6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 is available in PbF as a Lead-Free
VCES = 600V
IC = 7.0A, TC=100°C
G
tsc > 10µs, TJ=150°C
E
n-channel
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current„
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
–––
0.50
–––
–––
1.44
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
09/16/04
IRGB6B60KDPbF/IRGS/SL6B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 600 –––
Temperature Coeff. of Breakdown Voltage ––– 0.3
Collector-to-Emitter Saturation Voltage
1.5 1.80
––– 2.20
Gate Threshold Voltage
3.5 4.5
Temperature Coeff. of Threshold Voltage ––– -10
Forward Transconductance
––– 3.0
Zero Gate Voltage Collector Current
––– 1.0
––– 200
Diode Forward Voltage Drop
––– 1.25
––– 1.20
Gate-to-Emitter Leakage Current
––– –––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 500µA
––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)
2.20
V
IC = 5.0A, VGE = 15V
2.50
IC = 5.0A,VGE = 15V,
TJ = 150°C
5.5
V
VCE = VGE, IC = 250µA
––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
–––
S
VCE = 50V, IC = 5.0A, PW=80µs
150
µA
VGE = 0V, VCE = 600V
500
VGE = 0V, VCE = 600V, TJ = 150°C
1.45
IC = 5.0A
1.40
V
IC = 5.0A
TJ = 150°C
±100 nA
VGE = ±20V
Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operting Area
SCSOA
Short Circuit Safe Operting Area
Erec
trr
Irr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Ref.Fig.
Max. Units
Conditions
–––
IC = 5.0A
–––
nC
VCC = 400V
CT1
–––
VGE = 15V
CT4
210
µJ
IC = 5.0A, VCC = 400V
245
VGE = 15V,R G = 100Ω, L =1.4mH
455
Ls = 150nH
TJ = 25°C ƒ
CT4
34
IC = 5.0A, VCC = 400V
26
VGE = 15V, RG = 100Ω L =1.4mH
230
ns
Ls = 150nH, TJ = 25°C
22
CT4
260
IC = 5.0A, VCC = 400V
13,15
300
µJ
VGE = 15V,R G = 100Ω, L =1.4mH
WF1WF2
560
Ls = 150nH
TJ = 150°C ƒ
14, 16
37
IC = 5.0A, VCC = 400V
CT4
26
VGE = 15V, RG = 100Ω L =1.4mH
255
ns
Ls = 150nH, TJ = 150°C
WF1
27
WF2
–––
VGE = 0V
–––
pF
VCC = 30V
–––
f = 1.0MHz
4
TJ = 150°C, IC = 26A, Vp =600V
FULL SQUARE
VCC = 500V, VGE = +15V to 0V,RG = 100Ω CT2
CT3
µs
TJ = 150°C, Vp =600V, RG = 100Ω
10 ––– –––
WF4
VCC = 360V, VGE = +15V to 0V
17,18,19
––– 90 175
µJ
TJ = 150°C
20, 21
––– 70
80
ns
VCC = 400V, IF = 5.0A, L = 1.4mH
CT4,WF3
––– 10
14
A
VGE = 15V,RG = 100Ω, Ls = 150nH
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
18.2
1.9
9.2
110
135
245
25
17
215
13.2
150
190
340
28
17
240
18
290
34
10
Note:  to „ are on page 15
2
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IRGB6B60KDPbF/IRGS/SL6B60KD
15
100
90
80
70
IC (A)
Ptot (W)
10
5
60
50
40
30
20
10
0
0
0
20
40
60
80
100 120 140 160
0
T C (°C)
20
40
60
80
100 120 140 160
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
100
10
10
IC A)
IC (A)
10 µs
1
1
100 µs
DC
1ms
0.1
0
1
10
100
1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
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10000
10
100
1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3
IRGB6B60KDPbF/IRGS/SL6B60KD
20
20
18
VGE
VGE
VGE
VGE
VGE
16
12
18
VGE
VGE
VGE
VGE
VGE
16
14
ICE (A)
ICE (A)
14
= 18V
= 15V
= 12V
= 10V
= 8.0V
10
8
12
10
8
6
6
4
4
2
2
0
= 18V
= 15V
= 12V
= 10V
= 8.0V
0
0
1
2
3
4
5
6
0
1
2
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
4
5
6
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
20
30
18
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
16
14
12
-40°C
25°C
150°C
25
20
IF (A)
ICE (A)
3
VCE (V)
10
8
15
10
6
4
5
2
0
0
0
1
2
3
4
5
6
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
4
0.0
0.5
1.0
1.5
2.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
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20
20
18
18
16
16
14
14
12
ICE = 3.0A
10
ICE = 5.0A
8
ICE = 10A
VCE (V)
VCE (V)
IRGB6B60KDPbF/IRGS/SL6B60KD
12
ICE = 3.0A
10
ICE = 5.0A
8
ICE = 10A
6
6
4
4
2
2
0
0
5
10
15
20
5
10
VGE (V)
15
20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
20
40
18
35
16
T J = 25°C
T J = 150°C
30
12
10
ICE = 3.0A
ICE = 5.0A
8
ICE = 10A
25
ICE (A)
VCE (V)
14
20
15
6
10
4
T J = 150°C
5
2
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
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20
T J = 25°C
0
0
5
10
15
20
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
IRGB6B60KDPbF/IRGS/SL6B60KD
700
1000
600
tdOFF
EON
Swiching Time (ns)
Energy (µJ)
500
400
EOFF
300
200
100
tF
tdON
tR
10
100
0
0
5
10
15
1
20
0
5
IC (A)
15
20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
250
1000
tdOFF
Swiching Time (ns)
EOFF
200
Energy (µJ)
10
150
EON
100
100
tdON
tR
tF
10
50
1
0
0
50
100
150
R G (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
200
0
50
100
150
200
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
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IRGB6B60KDPbF/IRGS/SL6B60KD
20
25
RG = 22 Ω
16
20
IRR (A)
IRR (A)
RG = 47 Ω
15
RG = 100 Ω
12
8
10
RG = 150 Ω
4
5
0
0
0
5
10
15
0
20
50
100
200
RG (Ω)
IF (A)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 5.0A
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C
1200
20
22Ω
1000
16
Q RR (µC)
12
8
10A
47Ω
800
IRR (A)
150
100 Ω
600
5.0A
150Ω
3.0A
400
200
4
0
0
0
200
400
600
800
diF /dt (A/µs)
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 5.0A; TJ = 150°C
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1000
0
200
400
600
800
1000
diF /dt (A/µs)
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
7
IRGB6B60KDPbF/IRGS/SL6B60KD
300
22Ω
Energy (µJ)
250
200
47Ω
150
100 Ω
100
150 Ω
50
0
5
10
15
IF (A)
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
1000
14
Cies
300V
Capacitance (pF)
12
100
400V
VGE (V)
10
Coes
Cres
8
6
10
4
2
0
1
0
1
10
VCE (V)
Fig. 22- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
8
100
5
10
15
20
Q G , Total Gate Charge (nC)
Fig. 23 - Typical Gate Charge vs. VGE
ICE = 5.0A; L = 600µH
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IRGB6B60KDPbF/IRGS/SL6B60KD
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
R1
R1
τJ
τ1
0.01
0.02
R2
R2
τ2
τ1
R3
R3
τ3
τ2
τC
τ
0.447
0.219
τ3
Ci= τi/Ri
Ci= i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τi (sec)
0.708
0.00022
0.00089
0.01037
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
τJ
0.01
0.02
0.1
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ3
τ2
τC
τ
τ3
Ri (°C/W) τi (sec)
1.194
0.000172
2.424
0.001517
0.753
Ci= τi/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
R3
R3
0.080325
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGB6B60KDPbF/IRGS/SL6B60KD
L
L
VCC
DUT
80 V
+
-
0
DUT
480V
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
Driver
L
- 5V
360V
DC
DUT /
DRIVER
DUT
VCC
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
DUT
VCC
ICM
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGB6B60KDPbF/IRGS/SL6B60KD
9
400
8
350
7
90% ICE
300
6
25
400
20
300
15
TEST CURRENT
200
4
150
3
5% V CE
100
200
90% test current
100
2
5% ICE
VCE (V)
tf
I CE (A)
5
VCE (V)
250
500
10% test current
tr
50
1
0
0
Eof f Loss
0.30
5
5% V CE
0
-50
-0.20
10
ICE (A)
450
0
Eon Loss
-1
-100
16.00
0.80
16.10
time(µs)
16.20
16.30
-5
16.40
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
50
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
8
0
500
50
400
40
6
QR R
4
2
-150
0
-200
-2
-250
Peak
IRR
10%
Peak
IRR
-300
-400
-10
-450
-0.06
-12
0.24
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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30
200
20
100
10
-6
-8
0.14
IC E
300
-4
-350
0.04
VC E
ICE (A)
-100
VCE (V)
t RR
IF (A)
V F (V)
-50
0
-5.00
0.00
5.00
10.00
0
15.00
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
11
IRGB6B60KDPbF/IRGS/SL6B60KD
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
IGBTs, CoPACK
2 - DRAIN
1- GATE
3 - SOURCE
2- DRAIN
3- SOURCE
4 - DRAIN
4- DRAIN
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
HEXFET
1 - GATE
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
12
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
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IRGB6B60KDPbF/IRGS/SL6B60KD
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLE D ON WW 02, 2000
IN T HE AS S EMBL Y LINE "L"
INT ERNAT IONAL
R ECTIFIER
LOGO
Note: "P" in as sembly line
pos ition indicates "L ead-F ree"
PART NUMBER
F530S
AS S EMBLY
L OT CODE
DAT E CODE
YEAR 0 = 2000
WE EK 02
LINE L
OR
INT E RNAT IONAL
RE CT IF IER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBE R
F 530S
DAT E CODE
P = DE SIGNAT ES LE AD-F RE E
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WE EK 02
A = AS SE MBLY SIT E CODE
13
IRGB6B60KDPbF/IRGS/SL6B60KD
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPLE : T HIS IS AN IRL 3103L
L OT CODE 1789
AS S EMB L ED ON WW 19, 1997
IN TH E AS S E MBL Y L INE "C"
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
INT E RNAT IONAL
RE CT IF IER
LOGO
AS S E MB LY
L OT CODE
PART NUMBE R
DAT E CODE
YE AR 7 = 1997
WE E K 19
LINE C
OR
INT E RNAT IONAL
RE CT IF IER
L OGO
AS S E MB LY
LOT CODE
14
PART NUMBE R
DAT E CODE
P = DES IGNAT E S LE AD-F REE
PRODUCT (OPTIONAL)
YE AR 7 = 1997
WEE K 19
A = AS S EMB L Y S ITE CODE
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IRGB6B60KDPbF/IRGS/SL6B60KD
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
 This is only applied to TO-220AB package
‚ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ Energy losses include "tail" and diode reverse recovery.
„ VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 100Ω.
TO-220 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/04
www.irf.com
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