DG200A Monolithic Dual SPST CMOS Analog Switch Features Benefits Applications Wide Dynamic Range Simple Interfacing Reduced External Component Count 15 V Input Signal Range 44-V Maximum Supply Ranges On-Resistance: 45 TTL and CMOS Compatibility Servo Control Switching Programmable Gain Amplifiers Audio Switching Programmable Filters Description The DG200A is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally suited for designs requiring a wide analog voltage range coupled with low on-resistance. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. In the on condition, this bi-directional switch introduces no offset voltage of its own. The DG200A is designed on Siliconix’ improved PLUS-40 CMOS process. An epitaxial layer prevents latchup. Functional Block Diagram and Pin Configuration Dual-In-Line IN2 1 14 IN1 Metal Can V+ (Substrate and Case) NC 2 13 NC GND 3 12 V+ Substrate NC 4 11 NC S2 5 10 S1 D2 6 9 D1 V– 7 8 IN1 1 IN2 GND S1 9 2 8 3 7 4 NC 10 S2 5 D1 NC 6 V– D2 Top View Top View Truth Table Logic Switch 0 ON 1 OFF Logic g “0” 0.8 V L i “1” 2.4 Logic 24V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70035. Siliconix S-52880—Rev. B, 28-Apr-97 1 DG200A Ordering Information Temp Range Package 0 to 70_C 14-Pin Plastic DIP DG200ACJ 14-Pin CerDIP DG200ABK 10-Pin Metal Can DG200ABA –25 to 85_C Part Number DG200AAK 14-Pin CerDIP –55 to 125_C DG200AAK/883, JM38510/12301BCA DG200AAA 10-Pin Metal Can DG200AAA/883, JM38510/12301BIC 14-Pin Sidebraze JM38510/12301BCC Absolute Maximum Ratings V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 30 mA, whichever occurs first Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA Current S or D (Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AX, BX Suffix) . . . . . . . . . . –65 to 150_C (CJ Suffix) . . . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 10-Pin Metal Canc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 14-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW 14-Pin Plastic DIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 11 mW/_C above 75_C e. Derate 6.5 mW/_C above 25_C Schematic Diagram (Typical Channel) V+ S V– – + V+ GND INX D V– Figure 1. 2 Siliconix S-52880—Rev. B, 28-Apr-97 DG200A Specificationsa Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V– V = –15 15 V V+ VIN = 2.4 V, 0.8 Vf A Suffix B, C Suffix –55 to 125_C Tempb Typc Mind Maxd Mind Maxd Unit –15 15 –15 15 V 80 100 W Analog Switch Analog Signal Rangee VANALOG Full Drain-Source On-Resistance rDS(on) VD = 10 V, IS = –1 mA Room Full 45 70 100 Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full 0.01 –2 –100 2 100 –5 –100 5 100 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full 0.01 –2 –100 2 100 –5 –100 5 100 Channel On Leakage Currentf ID(on) VS = VD = 14 V Room Full 0.1 –2 –200 2 200 –5 –200 5 200 VIN = 2.4 V Room Full 0.0009 –0.5 –1 VIN = 15 V Room Full 0.005 VIN = 0 V Room Full –0.0015 Room 440 1000 1000 Room 340 425 425 CL = 1000 pF, Vg = 0 V Rg = 0 W Room –10 VS = 0 V Room 9 VD = 0 V Room 9 VD = VS = 0 V, VIN = 0 V Room 25 Room 75 Room 90 Room 0.8 Room –0.23 nA Digital Control Input p Current with I V l Hi h Input Voltage High Input Current with Input Voltage Low IINH IINL –1 –10 0.5 1 –0.5 –1 1 10 mA –1 –10 Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection tON tOFF Q Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) + CS(On) Off Isolation OIRR Crosstalk (Channel-to-Channel) XTALK See Switching Time Test Circuit f = 140 kHz VIN = 5 V VIN = 5 V V, RL = 75 W VS = 2 V, f = 1 MHz ns pC pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I– Both Channels On or Off VIN = 0 V and d 22.4 4V 2 –1 2 mA –1 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52880—Rev. B, 28-Apr-97 3 DG200A Typical Characteristics rDS(on) vs. VD and Power Supply Voltage Leakage Currents vs. Analog Voltage +6 rDS(on) ( ) 100 5 V 10 V 12 V 15 V 20 V _ ID(off) or IS(off) 0 A I S , I D (pA) A: B: C: D: E: 120 80 B 60 –6 ID(on) –12 C D 40 –18 E 20 –24 –15 –12 –9 –6 –3 0 3 6 9 12 15 –15 –12 –9 VD – Drain Voltage (V) Input Switching Threshold vs. V+ and V– Supply Voltages VT (V) 2.0 1.5 1.0 0.5 0 0 5 10 15 V+, V– Positive and Negative Supplies (V) 4 –3 0 3 6 9 12 15 20 Supply Currents vs. Toggle Frequency V+ = 15 V V– = –15 V Both logic inputs toggled simutaneously 6 5 I+, I– (mA) ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉ 2.5 –6 VANALOG – Analog Voltage (V) 4 3 2 I+ 1 I– 0 1k 10 k 100 k 1M Toggle Frequency (Hz) Siliconix S-52880—Rev. B, 28-Apr-97 DG200A Test Circuits VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V Logic Input Switch Input 3V V+ tr <20 ns tf <20 ns 50% 0V VS = +5 V tOFF VO IN VS GND CL 35 pF RL 1 kW 3V 90% Switch Output D S V– VO tON –15 V RL VO = VS RL + rDS(on) Figure 2. Switching Time +15 V DVO VO V+ Rg S D VO CL 1000 pF IN Vg 3V GND ON INX OFF ON V– DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO –15 V Figure 3. Charge Injection +15 V C +15 V V+ C V+ S VS VO D Rg = 50 W D1 50 W IN1 0V Rg = 50 W 5V S1 VS RL IN GND V– C NC 0V S2 VO D2 RL IN2 GND V– C –15 V –15 V Off Isolation = 20 log VS VO XTALK = 20 log C = RF bypass Figure 4. Off Isolation Siliconix S-52880—Rev. B, 28-Apr-97 VS VO Figure 5. Channel-to-Channel Crosstalk 5