Micronas HAL115UA-K Hall effect sensor family Datasheet

MICRONAS
Edition Dec. 20, 1999
6251-456-2DS
HAL114, HAL115
Hall Effect Sensor Family
MICRONAS
HAL11x
Contents
Page
Section
Title
3
3
3
3
4
4
4
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Features
Family Overview
Marking Code
Operating Junction Temperature Range
Hall Sensor Package Codes
Solderability
4
2.
Functional Description
5
5
5
5
6
6
7
8
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics
10
10
12
4.
4.1.
4.2.
Type Descriptions
HAL114
HAL115
14
14
14
14
14
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Application Circuit
Ambient Temperature
Extended Operating Conditions
Start-up Behavior
16
6.
Data Sheet History
2
Micronas
HAL11x
Hall Effect Sensor Family
in CMOS technology
1.2. Family Overview
The types differ according to the mode of switching.
Release Notes: Revision bars indicate significant
changes to the previous edition.
Type
Switching Behavior
see Page
1. Introduction
HAL114
unipolar
10
The HAL 11x family consists of different Hall switches
produced in CMOS technology.
HAL115
bipolar
12
All sensors include a temperature-compensated Hall
plate, a comparator, and an open-drain output transistor.
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output
transistor is switched on or off. The sensors of this family
differ in the switching behavior.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
4.5 V to 24 V in the ambient temperature range from
–40 °C up to 125 °C.
All sensors are available in an SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
1.1. Features
1.3. Marking Code
– operates from 4.5 V to 24 V supply voltage
– overvoltage protection
– reverse-voltage protection at VDD-pin
– short-circuit protected open-drain output by thermal
shut down
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
– operates with static magnetic fields and dynamic magnetic fields up to 20 kHz
– stable switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the magnetic characteristics
Micronas
Temperature Range
K
E
C
HAL114
114K
114E
114C
HAL115
115K
115E
115C
3
HAL11x
1.4. Operating Junction Temperature Range
2. Functional Description
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature TJ).
The HAL 11x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
K: TJ = –40 °C to +140 °C
E: TJ = –40 °C to +100 °C
C: TJ = 0 °C to +100 °C
The relationship between ambient temperature (TA) and
junction temperature is explained in section 5.2. on page
14.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K, E, or C
Package: SF for SOT-89B
UA for TO-92UA
(SO for SOT-89A)
Type: 11x
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the VDD-pin for reverse
voltages ranging from 0 V to –15 V.
Example: HAL114UA-E
→ Type: 114
→ Package: TO-92UA
→ Temperature Range: TJ = –40 °C to +100 °C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.6. Solderability
HAL11x
VDD
1
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hall Plate
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Comparator
OUT
Output
3
GND
2
Fig. 2–1: HAL11x block diagram
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40 °C and 90% relative humidity.
VDD
1
3
OUT
2
GND
Fig. 1–1: Pin configuration
4
Micronas
HAL11x
3. Specifications
4.06 ±0.1
1.5 ±0.05
sensitive area
x1
0.3
3.1. Outline Dimensions
x2
y
3.05 ±0.1
4.55 ±0.1
x1
x2
0.125
sensitive area
3.1 ±0.2
1.7
0.48
0.7
y
2
0.55
2.6 ±0.1
min.
0.25
2
3
0.75 ±0.2
4 ±0.2
1
0.36
14.0
min.
top view
1
2
3
0.42
0.4
1.53 ±0.05
0.4
1.27 1.27
0.4
1.5
(2.54)
3.0
branded side
branded side
45°
0.8
SPGS7002-7-A/2E
0.06 ±0.04
SPGS7001-7-A3/2E
Fig. 3–3:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
Fig. 3–1:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
Note: The SOT-89A package will be discontinued in
2000 and be replaced by the SOT-89B package.
Note: For all package diagrams, a mechanical tolerance
of ±50 µm applies to all dimensions where no tolerance
is explicitly given.
4.55 ±0.1
x1
0.125
x2
sensitive area
1.7
0.3
y
2
4 ±0.2
0.4 mm x 0.2 mm
2.55 ±0.1
min.
0.25
3.2. Dimensions of Sensitive Area
3.3. Positions of Sensitive Areas
top view
1
1.15 ±0.05
2
0.4
3
SOT-89A
0.4
SOT-89B
TO-92UA
|x2 – x1| / 2 < 0.2 mm
0.4
1.5
y = 0.98 mm
± 0.2 mm
3.0
y = 0.95 mm
± 0.2 mm
y = 1.0 mm
± 0.2 mm
branded side
0.06 ±0.04
SPGS0022-3-A3/2E
Fig. 3–2:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
Micronas
5
HAL11x
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
–15
281)
V
–VP
Test Voltage for Supply
1
–242)
–
V
–IDD
Reverse Supply Current
1
–
501)
mA
IDDZ, IOZ
Current through Protection Devices
1 or 3
–2003)
2003)
mA
VO
Output Voltage
3
–0.3
281)
V
IO
Continuous Output On Current
3
–
301)
mA
IOmax
Peak Output On Current
3
–
2503)
mA
TS
Storage Temperature Range
–65
150
°C
TJ
Junction Temperature Range
–40
150
°C
1) as long as T max is not exceeded
J
2) with a 220 Ω series resistor at pin 1
3) t < 2 ms
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
4.5
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
RV
Series Resistor1)
1
270
Ω
1)
6
see Fig. 5–1 on page 14
Micronas
HAL11x
3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
IDD
Supply Current
1
6
8.2
11
mA
TJ = 25 °C
IDD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
VOL
Output Voltage over
Temperature Range
3
–
120
400
mV
IOL = 12.5 mA
VOL
Output Voltage over
Temperature Range
3
–
190
500
mV
IOL = 20 mA
IOH
Output Leakage Current
3
–
0.06
1
µA
B < Boff,
TJ = 25 °C, VOH = 0 to 24 V
IOH
Output Leakage Current over
Temperature Range
3
–
–
10
µA
B < Boff,
VOH = 0 to 24 V
ten(O)
Enable Time of Output after
Setting of VDD
1
–
6
10
µs
VDD = 12 V
B > BON + 2 mT or
B < BOFF – 2 mT
tr
Output Rise Time
3
–
0.08
0.4
µs
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
tf
Output Fall Time
3
–
0.06
0.4
µs
VDD = 12 V, RL = 820 Ohm,
CL = 20 pF
RthJSB
case
SOT-89A
SOT-89B
Thermal Resistance Junction
to Substrate Backside
–
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–4
RthJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
5.0
2.0
2.0
1.0
Fig. 3–4: Recommended pad size SOT-89x
Dimensions in mm
Micronas
7
HAL11x
3.7. Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
Switching type
TJ
Hysteresis BHYS
Unit
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
7.5
21.5
36
4.3
17.4
33.2
2.8
4.1
5
mT
7
21.1
34
4
17.1
31.2
2.8
4
4.5
mT
140 °C
6.1
19.4
31.3
3.6
16.1
28.8
2.2
3.3
4
mT
–40 °C
–10.7
1.4
12.5
–12.5
–1.4
10.7
1.8
2.8
7
mT
25 °C
–10.7
1.2
12.5
–12.5
–1.2
10.7
1.8
2.4
7
mT
140 °C
–10.7
0.9
12.5
–12.5
–0.9
10.7
1
1.8
7
mT
–40 °C
unipolar
25 °C
bipolar
Off point BOFF
Min.
HAL 114
HAL 115
On point BON
Note: For detailed descriptions of the individual types, see pages 10 and following.
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
mA
15
IDD
mA
12
HAL 11x
TA = –40 °C
10
IDD
HAL 11x
TA = –40 °C
10
TA = 25 °C
TA = 140 °C
5
TA = 25 °C
8
TA = 140 °C
0
6
–5
4
–10
2
–15
–15 –10 –5
0
5
10 15 20 25 30 V
VDD
Fig. 3–5: Typical supply current
versus supply voltage
8
0
0
1
2
3
4
5
6 V
VDD
Fig. 3–6: Typical supply current
versus supply voltage
Micronas
HAL11x
mA
12
mV
500
HAL 11x
HAL 11x
VDD = 12 V
IDD
10
VOL 400
VDD = 4.5 V
8
VDD = 24 V
300
IO = 20 mA
6
200
4
IO = 12.5 mA
100
2
0
–50
0
50
0
–50
150 °C
100
0
50
150 °C
TA
TA
Fig. 3–9: Typical output low voltage
versus temperature
Fig. 3–7: Typical supply current
versus temperature
mV
500
100
µA
2
10
HAL 11x
HAL 11x
IO = 12.5 mA
VOL 400
IOH
VOH = 24 V
VDD = 5 V
1
10
0
10
300
–1
10
TA = 140 °C
–2
10
200
TA = 25 °C
–3
10
TA = –40 °C
–4
10
100
0
0
5
10
15
20
25
VDD
Fig. 3–8: Typical output low voltage
versus supply voltage
Micronas
30 V
–50
0
50
100
150 °C
TA
Fig. 3–10: Typical output leakage current
versus temperature
9
HAL114
4. Type Description
Applications
4.1. HAL 114
The HAL 114 is the optimal sensor for applications with
one magnetic polarity such as:
The HAL 114 is a unipolar switching sensor (see
Fig. 4–1).
– solid state switches,
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
– position and end-point detection, and
– contactless solution to replace micro switches,
– rotating speed measurement.
For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side
of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: unipolar
VOL
– typical BON: 21.1 mT at room temperature
0
– typical BOFF: 17.1 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 20 kHz
BOFF
BON
B
Fig. 4–1: Definition of magnetic switching points for
the HAL 114
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
7.5
21.5
36
4.3
17.4
33.2
2.8
4.1
5
mT
7
21.1
34
4
17.1
31.2
2.8
4
4.5
mT
100 °C
6.3
19.9
31.5
3.6
16.4
28.9
2.6
3.5
4
mT
140 °C
6.1
19.4
31.3
3.6
16.1
28.8
2.2
3.3
4
mT
–40 °C
25 °C
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.
10
Micronas
HAL114
mT
30
HAL 114
mT
30
HAL 114
VDD = 12 V
BON
BOFF
25
BON
BOFF 25
20
20
15
15
BON
BOFF
TA = –40 °C
10
10
TA = 25 °C
TA = 140 °C
5
0
5
0
5
10
15
20
25
30 V
VDD
BON
BOFF
0
50
100
150 °C
TA
Fig. 4–2: Typical magnetic switching
points versus supply voltage
mT
30
0
–50
Fig. 4–4: Typical magnetic switching
points versus temperature
HAL 114
25
20
15
TA = –40 °C
10
TA = 25 °C
TA = 140 °C
5
0
3
4
5
6 V
VDD
Fig. 4–3: Typical magnetic switching
points versus supply voltage
Micronas
11
HAL115
4.2. HAL 115
Applications
The HAL 115 is a bipolar switching sensor (see Fig. 4–5).
The HAL 115 is the optimal sensor for all applications
with alternating magnetic signals at the sensor position
such as:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
– rotating speed measurement,
– commutation of brushless DC-motors and cooling
fans.
For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the
branded side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: bipolar
VOL
– high sensitivity
– typical BON: 1.2 mT at room temperature
BOFF
– typical BOFF: –1.2 mT at room temperature
0
BON
B
Fig. 4–5:Definition of magnetic switching points for the
HAL115
– operates with static magnetic fields and dynamic magnetic fields up to 20 kHz
Magnetic Characteristics at TJ = –40 °C to +140 °C, VDD = 4.5 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
–40 °C
–10.7
1.4
12.5
–12.5
–1.4
10.7
1.8
2.8
7
mT
25 °C
–10.7
1.2
12.5
–12.5
–1.2
10.7
1.8
2.4
7
mT
100 °C
–10.7
1
12.5
–12.5
–1
10.7
1.5
2
7
mT
140 °C
–10.7
0.9
12.5
–12.5
–0.9
10.7
1
1.8
7
mT
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
12
Micronas
HAL115
mT
6
HAL 115
VDD = 12 V
BON, 4
BOFF
2
BON
0
BOFF
–2
–4
–6
–50
0
50
100
150 °C
TA
Fig. 4–6:Typical magnetic switching
points versus ambient temperature
Micronas
13
HAL11x
5. Application Notes
5.2. Ambient Temperature
5.1. Application Circuit
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient temperature TA).
The HAL 11x sensors can operate without external components. For applications with disturbances on the supply line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 5–1).
The series resistor and the capacitor should be placed
as closely as possible to the sensor.
TJ = TA + ∆T
At static conditions, the following equation is valid:
∆T = IDD * VDD * Rth
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
RV
220 Ω
1
OUT
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
3
TAmax = TJmax – ∆T
RL
VDD
VDD
4.7 nF
2
5.3. Extended Operating Conditions
GND
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating
Conditions (see page 6).
Fig. 5–1: Recommended application circuit
Please use the sensors of the HAL 5xx family if lower operation voltage, lower current consumption or tighter
magnetic specifications required.
VDD
5.4. Start-up Behavior
L2
L1
3.3 k
1
HAL115
3
R1
The sensors have an initialization time (enable time
ten(O)) after applying the supply voltage. This parameter
ten(O) is specified in the Electrical Characteristics (see
page 7).
R2
3.3 k
2
2.2 µ/50 V
C1
Fig. 5–2: Recommended application circuit
for DC fans
14
2.2 µ
/50 V
C2
During the initialization time, the output state is not defined and can toggle. After ten(O), the output will be low
if the applied magnetic field B is above BON or high if B
is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above BONmax,
respectively, below BOFFmin.
Micronas
HAL11x
Micronas
15
HAL11x
6. Data Sheet History
1. Final data sheet: “HAL114 Unipolar Hall Switch IC”,
June 10, 1998, 6251-456-1DS. First release of the final
data sheet.
2. Final data sheet: “HAL115 Hall Effect Sensor IC”,
May 7, 1997, 6251-414-1DS. First release of the final
data sheet.
3. Final data sheet: “HAL114, HAL 115 Hall Effect Sensor Family, Dec. 20, 1999, 6251-456-2DS. Second release of the final data sheet. Major changes:
– additional package SOT-89B
– temperature range “A” replaced by “K” for HAL114
– additional temperature range “K” for HAL115
– outline dimensions for SOT-89A and TO-92UA
changed
– supply voltage range changed for HAL115
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (12/1999)
Order No. 6251-456-2DS
16
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
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Micronas
HAL 11x, HAL 5xx, HAL 62x
Data Sheet Supplement
Subject:
Improvement of SOT-89B Package
Data Sheet Concerned:
HAL 114, 115, 6251-456-2DS, Dec. 20, 1999
HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999
HAL 55x, 56x, 6251-425-1DS, April 6, 1999
HAL 621, 629, 6251-504-1DS, Feb. 3, 2000
Supplement:
No. 1/ 6251-531-1DSS
Edition:
July 4, 2000
Changes:
– position tolerance of the sensitive area reduced
– tolerances of the outline dimensions reduced
– thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
– SOT-89A will be discontinued in December 2000
sensitive area
4.55
0.15
∅ 0.2
1.7
0.3
y
2
4 ±0.2
2.55
min.
0.25
top view
1
1.15
2
3
0.4
0.4
0.4
1.5
3.0
branded side
0.06 ±0.04
SPGS0022-5-A3/2E
Position of sensitive area
HAL 114, 115
HAL 50x, 51x
HAL 621, 629
HAL 55x, HAL 56x
x
center of the package
center of the package
y
0.95 mm nominal
0.85 mm nominal
Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerance of the sensitive area is defined in the package diagram.
Micronas
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