Ordering number : ENA1317A ATP202 N-Channel Power MOSFET http://onsemi.com 30V, 50A, 12mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 30 PW≤10μs, duty cycle≤1% V 50 A 150 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 45 mJ 25 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=100μH, IAV=25A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP202-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP202 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/91708PA TIIM TC-00001568 No. A1317-1/7 ATP202 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 ID=13A, VGS=4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time VGS=±16V, VDS=0V VDS=10V, ID=1mA RDS(on)1 Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=25A ID=25A, VGS=10V Input Capacitance Rise Time Conditions V 1.2 10 1 μA ±10 μA 2.6 17 V S 9 12 mΩ 14 20 mΩ 1650 pF 285 pF Crss 160 pF td(on) tr 16 ns 185 ns 93 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=15V, VGS=10V, ID=50A 93 ns 27 nC 7.5 nC 4 IS=50A, VGS=0V 0.97 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=25A RL=0.6Ω VIN D PW=10μs D.C.≤1% VOUT G ATP202 P.G 50Ω S Ordering Information Device ATP202-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1317-2/7 ATP202 10 1.0 1.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 ID=13A 25A 15 10 5 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V = Tc 5 C 5° --2 75 °C 3 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain Current, ID -- A 25° C 4.5 A =13 V, I D =4.5 VGS 15 =25A V, I D 10.0 S= VG 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT14015 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT14017 Ciss, Coss, Crss -- VDS 5 VDD=15V VGS=10V 5.0 IT14013 Diode Forward Voltage, VSD -- V f=1MHz 3 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 4.0 20 IT14016 SW Time -- ID 7 3.5 25 0.01 7 5 3 2 0.001 7 2 3.0 Single pulse 100 7 5 3 2 1.0 5 0.1 2.5 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 25° 2.0 RDS(on) -- Tc 0 --60 16 2 7 1.5 Gate-to-Source Voltage, VGS -- V VDS=10V 3 10 1.0 IT14014 | yfs | -- ID 5 0.5 30 Tc=25°C Single pulse 0 0 0 IT14012 RDS(on) -- VGS 20 0 2.0 Tc= 75°C 25°C --25° C 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 30 3 20 10 Drain-to-Source Voltage, VDS -- V 5 5°C 20 30 °C VGS=3.5V 40 --25 30 50 Tc= 7 4.0V 40 0 --25 °C 75° C Tc= 60 25 °C 50 VDS=10V 4.5V 16.0 Drain Current, ID -- A 60 ID -- VGS 70 Drain Current, ID -- A V 10 .0V Tc=25°C 8 .0 V 6. 0V ID -- VDS 70 td(off) 100 7 tf 5 3 tr 2 td(on) Ciss 1000 7 5 3 Coss 2 Crss 10 7 5 0.1 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT14018 7 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14019 No. A1317-3/7 ATP202 VGS -- Qg 10 VDS=15V ID=50A 7 6 5 4 3 3 2 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Tc 35 30 25 20 15 10 5 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14022 D C op er at io n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14021 EAS -- Ta 120 40 0 Operation in this area is limited by RDS(on). IT14020 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 1m s m s 10 0.1 0.1 30 10 s 3 2 1 PW≤10μs 10 μs 10 0μ s 0m 10 7 5 2 0 ID=50A 3 2 1.0 7 5 0 IDP=150A 100 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14011 No. A1317-4/7 ATP202 Taping Specification ATP202-TL-H No. A1317-5/7 ATP202 Outline Drawing ATP202-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1317-6/7 ATP202 Note on usage : Since the ATP202 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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