Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 CC1310 SimpleLink™ Ultralow Power Sub-1-GHz Wireless MCU 1 Device Overview 1.1 Features 1 • Microcontroller – Powerful ARM® Cortex®-M3 – EEMBC CoreMark® Score: 142 – EEMBC ULPBench™ Score: 158 – Up to 48-MHz Clock Speed – 128-KB of In-System Programmable Flash – 8-KB of SRAM for Cache (or as GeneralPurpose RAM) – 20-KB of Ultralow Leakage SRAM – 2-Pin cJTAG and JTAG Debugging – Supports Over-the-Air Upgrade (OTA) • Ultralow Power Sensor Controller – Can Run Autonomous From the Rest of the System – 16-Bit Architecture – 2-KB of Ultralow Leakage SRAM for Code and Data • Efficient Code-Size Architecture, Placing TI-RTOS, Drivers and Bootloader in ROM • RoHS-Compliant Package – 7-mm × 7-mm VRGZ QFN48 (30 GPIOs) • Peripherals – All Digital Peripheral Pins Can Be Routed to Any GPIO – Four General-Purpose Timer Modules (Eight 16-Bit or Four 32-Bit Timers, PWM Each) – 12-Bit ADC, 200 ksamples/s, 8-Channel Analog MUX – Continuous Time Comparator – Ultralow Power Clocked Comparator – Programmable Current Source – UART – 2× SSI (SPI, MICROWIRE, TI) – I2C – I2S – Real-Time Clock (RTC) – AES-128 Security Module – True Random Number Generator (TRNG) – Support for Eight Capacitive Sensing Buttons – Integrated Temperature Sensor • External System – On-Chip Internal DC-DC Converter – Very Few External Components – Seamless Integration With the SimpleLink™ CC1190 Range Extender • Low Power – Wide Supply Voltage Range: 1.8 to 3.8 V – Active-Mode RX: 5.5 mA – Active-Mode TX at +10 dBm: 12.9 mA – Active-Mode MCU 48 MHz Running Coremark: 2.5 mA (51 µA/MHz) – Active-Mode MCU: 48.5 CoreMark/mA – Active-Mode Sensor Controller at 24 MHz: 0.4 mA + 8.2 µA/MHz – Sensor Controller, One Wake Up Every Second Performing One 12-Bit ADC Sampling: 0.85 µA – Standby: 0.6 µA (RTC Running and RAM and CPU Retention) – Shutdown: 185 nA (Wakeup on External Events) • RF Section – Excellent Receiver Sensitivity –124 dBm Using Long-Range Mode, –110 dBm at 50 kbps – Excellent Selectivity: 52 dB – Excellent Blocking Performance: 90 dB – Programmable Output Power up to +14 dBm – Single-Ended or Differential RF Interface – Suitable for Systems Targeting Compliance With Worldwide Radio Frequency Regulations • ETSI EN 300 220, EN 303 131, EN 303 204 (Europe) • FCC CFR47 Part 15 (US) • ARIB STD-T108 (Japan) – Wireless M-Bus and IEEE 802.15.4g PHY • Tools and Development Environment – Full-Feature and Low-Cost Development Kits – Multiple Reference Designs for Different RF Configurations – Packet Sniffer PC Software – Sensor Controller Studio – SmartRF™ Studio – SmartRF Flash Programmer 2 – IAR Embedded Workbench® for ARM – Code Composer Studio™ 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 1.2 • • • • • • • Applications 315-, 433-, 470-, 500-, 779-, 868-, 915-, and 920-MHz ISM and SRD Systems Low-Power Wireless Systems With 50-kHz to 5-MHz Channel Spacing SmartGrid and Automatic Meter Reading Home and Building Automation Wireless Alarm and Security Systems Industrial Monitoring and Control Wireless Healthcare Applications 1.3 www.ti.com • • • • • • • Wireless Sensor Networks Active RFID IEEE 802.15.4g, IP-Enabled Smart Objects (6LoWPAN), Wireless M-Bus, KNX Systems, WiSUN, ZigBee and Proprietary Systems Energy Harvesting Applications ESL (Electronic Shelf Label) Long-Range Sensor Applications Heat Cost Allocators Description The device is a member of the CC26xx and CC13xx family of cost-effective, ultralow power, 2.4-GHz and sub-1-GHz RF devices. Very low active RF, MCU current, and low-power mode current consumption provide excellent battery lifetime and allow operation on small coin-cell batteries and in energy-harvesting applications. The CC1310 device is the first part in a Sub-1-GHz family of cost-effective, ultralow power wireless MCUs. The CC1310 device combines a flexible, very low power RF transceiver with a powerful 48-MHz CortexM3 microcontroller in a platform supporting multiple physical layers and RF standards. A dedicated Radio Controller (Cortex-M0) handles low-level RF protocol commands that are stored in ROM or RAM, thus ensuring ultralow power and flexibility. The low-power consumption of the CC1310 device does not come at the expense of RF performance; the CC1310 device has excellent sensitivity and robustness (selectivity and blocking) performance. The CC1310 device is a highly integrated, true single-chip solution incorporating a complete RF system and an on-chip DC-DC converter. CC1310 is currently available in a 7-mm × 7-mm package, and future packages of 5-mm × 5-mm and 4-mm × 4-mm are planned. Sensors can be handled in a very low-power manner by a dedicated autonomous ultralow power MCU that can be configured to handle analog and digital sensors; thus the main MCU (Cortex-M3) is able to maximize sleep time. The CC1310 power and clock management and radio systems require specific configuration and handling by software to operate correctly. This has been implemented in the TI RTOS, and it is therefore recommended that this software framework is used for all application development on the device. The complete TI-RTOS and device drivers are offered in source code free of charge. Device Information (1) PART NUMBER CC1310 (1) 2 PACKAGE BODY SIZE (NOM) VQFN (48) 7.00 mm × 7.00 mm For more information, see Section 9, Mechanical Packaging and Orderable Information. Device Overview Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com 1.4 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Functional Block Diagram Figure 1-1 shows a block diagram for the CC1310 device. SimpleLinkTM CC1310 Wireless MCU cJTAG RF core ROM Main CPU: ADC ARM® &RUWH[03 ADC 32/64/128 KB Flash Digital PLL DSP Modem 8 KB Cache 20 KB SRAM ARM® &RUWH[00 General Peripherals / Modules I 2C 4x 32-bit Timers UART 2x SSI (SPI,µW,TI) 4 KB SRAM ROM Sensor Controller Sensor Controller Engine 12-bit ADC, 200ks/s I2S Watchdog Timer 2x Analog Comparators 10 / 15 / 30 GPIOs TRNG SPI / I2C Digital Sensor IF AES Temp. / Batt. Monitor Constant Current Source 32 ch. PDMA RTC Time to Digital Converter DC/DC converter 2 KB SRAM Figure 1-1. CC1310 Block Diagram Device Overview Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 3 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com Table of Contents 1 2 3 4 Device Overview ......................................... 1 6.1 Overview 1.1 Features .............................................. 1 6.2 Main CPU ........................................... 24 1.2 Applications ........................................... 2 6.3 RF Core ............................................. 25 1.3 Description ............................................ 2 6.4 Sensor Controller 1.4 Functional Block Diagram ............................ 3 6.5 Memory .............................................. 27 Revision History ......................................... 4 Device Comparison ..................................... 5 Terminal Configuration and Functions .............. 6 6.6 Debug 6.7 Power Management ................................. 28 ........................ 6 4.2 Signal Descriptions – RGZ Package ................. 6 Specifications ............................................ 8 5.1 Absolute Maximum Ratings .......................... 8 5.2 ESD Ratings .......................................... 8 5.3 Recommended Operating Conditions ................ 8 5.4 Power Consumption Summary ....................... 9 5.5 RF Characteristics .................................... 9 5.6 Receive (RX) Parameters ........................... 10 5.7 Transmit (TX) Parameters .......................... 11 5.8 PLL Parameters ..................................... 12 5.9 Thermal Characteristics ............................. 13 5.10 Timing and Switching Characteristics ............... 13 5.11 Typical Characteristics .............................. 20 Detailed Description ................................... 24 4.1 5 6 Pin Diagram – RGZ Package 7 8 9 ............................................ ................................... ............................................... ...................................... .................. 6.10 System Architecture ................................. Application, Implementation, and Layout ......... 7.1 TI Design ............................................ Device and Documentation Support ............... 8.1 Device Support ...................................... 8.2 Documentation Support ............................. 8.3 Additional Information ............................... 8.4 Trademarks.......................................... 8.5 Electrostatic Discharge Caution ..................... 8.6 Glossary ............................................. 6.8 Clock Systems 6.9 General Peripherals and Modules 24 26 27 29 29 30 31 32 33 33 35 36 36 36 36 Mechanical Packaging and Orderable Information .............................................. 36 9.1 Packaging Information .............................. 36 2 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from August 31, 2015 to September 30, 2015 • • 4 Page Changed device status from: Product Preview to: Production Data ........................................................... 1 Changed Typical Characteristics section ........................................................................................ 20 Revision History Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 3 Device Comparison Table 3-1. Device Family Overview DEVICE PHY SUPPORT FLASH (KB) RAM (KB) GPIO PACKAGE CC1310F128RGZ Proprietary, Wireless M-Bus, IEEE 802.15.4g 128 20 30 RGZ CC1310F64RGZ Proprietary, Wireless M-Bus, IEEE 802.15.4g 64 16 30 RGZ CC1310F32RGZ Proprietary, Wireless M-Bus, IEEE 802.15.4g 32 16 30 RGZ Device Comparison Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 5 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 4 Terminal Configuration and Functions 25 JTAG_TCKC 26 DIO_16 27 DIO_17 29 DIO_19 28 DIO_18 31 DIO_21 30 DIO_20 34 VDDS_DCDC 33 DCDC_SW 32 DIO_22 35 RESET_N Pin Diagram – RGZ Package 36 DIO_23 4.1 DIO_24 37 24 JTAG_TMSC DIO_25 38 23 DCOUPL DIO_26 39 22 VDDS3 DIO_27 40 21 DIO_15 20 DIO_14 DIO_28 41 DIO_29 42 DIO_30 43 19 DIO_13 18 DIO_12 CC13xx QFN48 7x7 DCDC VDDS 44 VDDR 45 17 DIO_11 16 DIO_10 15 DIO_9 14 DIO_8 X24M_N 46 X24M_P 47 Note: 4 5 6 7 8 9 X32K_Q2 DIO_1 DIO_2 DIO_3 DIO_4 DIO_7 12 3 RX_TX X32K_Q1 DIO_6 11 2 DIO_5 10 1 RF_P 13 VDDS2 RF_N VDDR_RF 48 I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities. Figure 4-1. RGZ (7-mm × 7-mm) Pinout, 0.5-mm Pitch 4.2 Signal Descriptions – RGZ Package Table 4-1. Signal Descriptions – RGZ Package PIN NAME TYPE NO. DESCRIPTION DCDC_SW 33 Power Output from internal DC-DC (1) DCOUPL 23 Power 1.27-V regulated digital-supply (decoupling capacitor) (2) DIO_1 6 Digital I/O GPIO, Sensor Controller DIO_2 7 Digital I/O GPIO, Sensor Controller DIO_3 8 Digital I/O GPIO, Sensor Controller DIO_4 9 Digital I/O GPIO, Sensor Controller DIO_5 10 Digital I/O GPIO, Sensor Controller, High drive capability DIO_6 11 Digital I/O GPIO, Sensor Controller, High drive capability DIO_7 12 Digital I/O GPIO, Sensor Controller, High drive capability DIO_8 14 Digital I/O GPIO DIO_9 15 Digital I/O GPIO DIO_10 16 Digital I/O GPIO DIO_11 17 Digital I/O GPIO DIO_12 18 Digital I/O GPIO (1) (2) 6 See technical reference manual listed in Documentation Support for more details. Do not supply external circuitry from this pin. Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Table 4-1. Signal Descriptions – RGZ Package (continued) PIN TYPE DESCRIPTION NAME NO. DIO_13 19 Digital I/O GPIO DIO_14 20 Digital I/O GPIO DIO_15 21 Digital I/O GPIO DIO_16 26 Digital I/O GPIO, JTAG_TDO, High drive capability DIO_17 27 Digital I/O GPIO, JTAG_TDI, High drive capability DIO_18 28 Digital I/O GPIO DIO_19 29 Digital I/O GPIO DIO_20 30 Digital I/O GPIO DIO_21 31 Digital I/O GPIO DIO_22 32 Digital I/O GPIO DIO_23 36 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_24 37 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_25 38 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_26 39 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_27 40 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_28 41 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_29 42 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_30 43 Digital/Analog I/O GPIO, Sensor Controller, Analog EGP — Power Ground – Exposed Ground Pad JTAG_TMSC 24 Digital I/O JTAG TMSC, High drive capability JTAG_TCKC 25 Digital I/O JTAG TCKC RESET_N 35 Digital input RF_N 2 RF I/O Negative RF input signal to LNA during RX Negative RF output signal to PA during TX RF_P 1 RF I/O Positive RF input signal to LNA during RX Positive RF output signal to PA during TX VDDR 45 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (3) (2) VDDR_RF 48 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC (4) (2) VDDS 44 Power 1.8-V to 3.8-V main chip supply (1) VDDS2 13 Power 1.8-V to 3.8-V DIO supply (1) VDDS3 22 Power 1.8-V to 3.8-V DIO supply (1) VDDS_DCDC 34 Power 1.8-V to 3.8-V DC-DC supply X24M_N 46 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 47 Analog I/O 24-MHz crystal oscillator pin 2 RX_TX 3 RF I/O X32K_Q1 4 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 5 Analog I/O 32-kHz crystal oscillator pin 2 (3) (4) Reset, active-low. No internal pullup Optional bias pin for the RF LNA If internal DC-DC is not used, this pin is supplied internally from the main LDO. If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO. Terminal Configuration and Functions Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 7 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 5 Specifications 5.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) VDDS (3) MIN MAX UNIT –0.3 4.1 V –0.3 VDDS + 0.3, max 4.1 V –0.3 VDDR + 0.3, max 2.25 V Voltage scaling enabled –0.3 VDDS Voltage scaling disabled, internal reference –0.3 1.49 Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9 Supply voltage Voltage on any digital pin (4) Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P Vin Voltage on ADC input Input RF level Tstg (1) (2) (3) (4) Storage temperature –40 V +10 dBm 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to VDDS, unless otherwise noted. VDDS2 and VDDS3 must be at the same potential as VDDS. Including analog capable DIO. 5.2 ESD Ratings VALUE VESD (1) (2) 5.3 Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1) All pins ±3500 Charged device model (CDM), per JESD22-C101 (2) All pins ±1250 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX –40 85 °C 1.8 3.8 V Rising supply voltage slew rate 0 100 mV/µs Falling supply voltage slew rate 0 20 mV/µs 3 mV/µs 5 °C/s Ambient temperature For operation in battery-powered and 3.3-V systems (internal DC-DC can be used to minimize power consumption) Operating supply voltage (VDDS) Falling supply voltage slew rate, with low-power flash setting (1) Positive temperature gradient in standby (1) (2) 8 (2) No limitation for negative temperature gradient, or outside standby mode UNIT For small coin-cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor must be used to ensure compliance with this slew rate. Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see Section 5.10.3.4). Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com 5.4 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Power Consumption Summary Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.6 V with DC-DC enabled, unless otherwise noted. Using boost mode (Increasing VDDR up to 1.95 V), will increase currents below by 15% (does not apply to TX 14-dBm setting where this current is already included). PARAMETER Icore Core current consumption TEST CONDITIONS TYP Reset. RESET_N pin asserted or VDDS below power-onreset threshold 100 Shutdown. No clocks running, no retention 185 Standby. With RTC, CPU, RAM and (partial) register retention. RCOSC_LF 0.6 Standby. With RTC, CPU, RAM and (partial) register retention. XOSC_LF 0.7 Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF 1.6 Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF 1.7 UNIT nA µA Idle. Supply Systems and RAM powered. 570 Active. MCU running CoreMark at 48 MHz 1.2 mA + 25.5 µA/MHz Active. MCU running CoreMark at 48 MHz 2.5 Active. MCU running CoreMark at 24 MHz 1.9 Radio RX 5.5 Radio TX, 10-dBm output power 12.9 Radio TX, boost mode (VDDR = 1.95 V), 14-dBm output power 22.6 mA mA PERIPHERAL CURRENT CONSUMPTION (1) (2) (3) Iperi (1) (2) (3) 5.5 Peripheral power domain Delta current with domain enabled 20 Serial power domain Delta current with domain enabled 13 RF Core Delta current with power domain enabled, clock enabled, RF core idle 237 µDMA Delta current with clock enabled, module idle 130 Timers Delta current with clock enabled, module idle 113 I2C Delta current with clock enabled, module idle 12 2 I S Delta current with clock enabled, module idle 36 SSI Delta current with clock enabled, module idle 93 UART Delta current with clock enabled, module idle 164 µA Adds to core current Icore for each peripheral unit activated. Iperi is not supported in standby or shutdown modes. Measured at 3.0 V. RF Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER Frequency bands (1) (1) MIN TYP MAX (300) (322) (400) (435) (470) (510) (779) (787) 863 930 UNIT MHz For more information, refer to CC1310 SimpleLink Wireless MCU Silicon Errata (SWRZ062). Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 9 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 5.6 www.ti.com Receive (RX) Parameters Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, DC-DC enabled, fRF = 868 MHz, unless otherwise noted. All measurements are done at the antenna input with a combined RX and TX path. PARAMETER TEST CONDITIONS MIN Data rate Data rate offset tolerance, IEEE 802.15.4g PHY 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–3 Data rate step size TYP MAX UNIT 50 kbps 1400 ppm 1.5 bps Digital channel filter programmable bandwidth Using VCO divide by 5 setting Receiver sensitivity, 50 kbps 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 868 MHz and 915 MHZ –110 dBm Receiver saturation 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 +10 dBm Selectivity, ±200 kHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 43, 45 dB Selectivity, ±400 kHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 48, 52 dB Blocking ±1 MHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 59, 62 dB Blocking ±2 MHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 64, 65 dB Blocking ±5 MHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 67, 68 dB Blocking ±10 MHz, 50 kbps Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 75, 76 dB 40 Spurious emissions 1 GHz to 13 GHz Radiated emissions measured according to ETSI EN (VCO leakage at 3.5 GHz) and 30 MHz 300 220 to 1 GHz 4000 kHz –70 dBm Image rejection (image compensation enabled) Wanted signal 3-dB above sensitivity limit. 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode), BER = 10–2 44 dB RSSI dynamic range 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode). Starting from the sensitivity limit. This is the range that will give an accuracy of ±2 95 dB RSSI accuracy 50 kbps, GFSK, 25-kHz deviation, 100-kHz RX BW (same modulation format as IEEE 802.15.4g mandatory mode) ±2 dB Receiver sensitivity, long range mode 625 bps 10 ksps, GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 40-kHz RX BW , BER = 10–2 Wanted signal 3-dB above sensitivity limit. 10 ksps, Selectivity, ±100 kHz, long range mode GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 625 bps 40-kHz RX BW , BER = 10–2 10 Specifications –124 dBm 52, 52 dB Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Receive (RX) Parameters (continued) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, DC-DC enabled, fRF = 868 MHz, unless otherwise noted. All measurements are done at the antenna input with a combined RX and TX path. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Wanted signal 3-dB above sensitivity limit. 10 ksps, Selectivity, ±200 kHz, long range mode GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 625 bps 40-kHz RX BW , BER = 10–2 61, 61 dB Blocking ±1 MHz, long range mode 625 bps Wanted signal 3-dB above sensitivity limit. 10 ksps, GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 40-kHz RX BW , BER = 10–2 73, 75 dB Blocking ±2 MHz, long range mode 625 bps Wanted signal 3-dB above sensitivity limit. 10 ksps, GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 40-kHz RX BW , BER = 10–2 78, 79 dB Blocking ±10 MHz, long range mode 625 bps Wanted signal 3-dB above sensitivity limit. 10 ksps, GFSK, 5-kHz deviation, FEC (half rate), DSSS = 8, 40-kHz RX BW , BER = 10–2 89, 90 dB 5.7 Transmit (TX) Parameters Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, DC-DC enabled, fRF = 868 MHz, unless otherwise noted. All measurements are done at the antenna input with a combined RX and TX path. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Max output power, boost mode VDDR = 1.95 V Min VDDS for boost mode is 2.1 V 868 MHz and 915 MHz +14 dBm Max output power 868 MHz and 915 MHz +12 dBm 24 dB Output power programmable range Output power variation Tested at +10-dBm setting ±0.7 dB Output power variation, boost bode +14 dBm ±0.5 dB Transmitting +14 dBm ETSI restricted bands <–59 dBm Transmitting +14 dBm ETSI outside restricted bands <–51 dBm 1 to 12.75 GHz Transmitting +14 dBm measured in 1-MHz bandwidth (ETSI) <–37 dBm Second harmonic Transmitting +14 dBm, conducted 868 MHz, 915 MHz –52, –55 dBm Third harmonic Transmitting +14 dBm, conducted 868 MHz, 915 MHz –58, –55 dBm Fourth harmonic Transmitting +14 dBm, conducted 868 MHz, 915 MHz –56, –56 dBm Spurious emissions (excluding harmonics) (1) Harmonics (1) 30 MHz to 1 GHz Suitable for systems targeting compliance with EN 300 220, EN 54-25, EN 303 131, EN 303 204, FCC CFR47 Part 15, ARIB STD-T108. Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 11 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com Transmit (TX) Parameters (continued) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, DC-DC enabled, fRF = 868 MHz, unless otherwise noted. All measurements are done at the antenna input with a combined RX and TX path. PARAMETER Spurious emissions outof-band, 915 MHz (1) Spurious emissions outof-band, 920.6 MHz (1) 5.8 TEST CONDITIONS MIN TYP MAX UNIT 30 MHz–88 MHz (within FCC restricted bands) Transmitting +14 dBm, conducted <–66 dBm 88 MHz–216 MHz (within FCC restricted bands) Transmitting +14 dBm, conducted <–65 dBm 216 MHz–960 MHz (within FCC restricted bands) Transmitting +14 dBm, conducted <–65 dBm 960 MHz–2390 MHz and above 2483.5 MHz (within FCC restricted band) Transmitting +14 dBm, conducted <–55 dBm 1–12.75 GHz (outside FCC restricted bands) Transmitting +14 dBm, conducted <–43 dBm Below 710 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–50 dBm 710–900 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–63 dBm 900–915 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–61 dBm 930–1000 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–60 dBm 1000–1215 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–58 dBm Above 1215 MHz (ARIB T-108) Transmitting +14 dBm, conducted <–39 dBm PLL Parameters Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V PARAMETER Phase noise in the 868-MHz band Phase noise in the 915-MHz band 12 TEST CONDITIONS MIN TYP MAX UNIT ±100-kHz offset, VCO divide by 5 –95 dBc/Hz ±200-kHz offset, VCO divide by 5 –105 dBc/Hz ±400-kHz offset, VCO divide by 5 –113 dBc/Hz ±1000-kHz offset, VCO divide by 5 –121 dBc/Hz ±2000-kHz offset, VCO divide by 5 –129 dBc/Hz ±10000 kHz offset, VCO divide by 5 –140 dBc/Hz ±100-kHz offset, VCO divide by 5 –97 dBc/Hz ±200-kHz offset, VCO divide by 5 –106 dBc/Hz ±400-kHz offset, VCO divide by 5 –114 dBc/Hz ±1000-kHz offset, VCO divide by 5 –123 dBc/Hz ±2000-kHz offset, VCO divide by 5 –131 dBc/Hz ±10000-kHz offset, VCO divide by 5 –141 dBc/Hz Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com 5.9 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Thermal Characteristics CC1310 RGZ (VQFN) THERMAL METRIC (1) UNIT (2) 48 PINS RθJA Junction-to-ambient thermal resistance 29.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 15.7 °C/W RθJB Junction-to-board thermal resistance 6.2 °C/W ψJT Junction-to-top characterization parameter 0.3 °C/W ψJB Junction-to-board characterization parameter 6.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 1.9 °C/W (1) (2) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. °C/W = degrees Celsius per watt. 5.10 Timing and Switching Characteristics 5.10.1 Reset Timing MIN RESET_N low duration TYP MAX UNIT 1 µs 5.10.2 Switching Characteristics: Wakeup and Timing Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. The times listed here do not include RTOS overhead. PARAMETER TEST CONDITIONS MCU, Idle → Active MCU, Standby → Active MCU, Shutdown → Active MIN TYP MAX UNIT 14 µs 174 µs 1097 µs Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 13 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 5.10.3 Clock Specifications 5.10.3.1 24-MHz Crystal Oscillator (XOSC_HF) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. (1) MIN TYP Crystal frequency 24 ESR equivalent series resistance 20 LM Motional inductance, relates to the load capacitance that is used for the crystal (CL in Farads) CL Crystal load capacitance UNIT MHz 60 < 1.6 × 10-24 / C2L Ω H 5 9 Start-up time (2) (1) (2) MAX 150 pF µs Probing or otherwise stopping the Crystal while the DC-DC converter is enabled may cause permanent damage to the device. The crystal start-up time is low because it is "kick-started" by using the RCOSC_HF oscillator (temperature and aging compensated) that is running at the same frequency. 5.10.3.2 32.768-kHz Crystal Oscillator (XOSC_LF) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. (1) MIN Crystal frequency ESR Equivalent series resistance 30 Crystal load capacitance (CL) (1) TYP MAX 32.768 6 UNIT kHz 100 kΩ 12 pF Probing or otherwise stopping the crystal while the DC-DC converter is enabled may cause permanent damage to the device. 5.10.3.3 48-MHz RC Oscillator (RCOSC_HF) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. MIN Frequency TYP 48 Uncalibrated frequency accuracy ±1% Calibrated frequency accuracy (1) ±0.25% Start-up time (1) MAX UNIT MHz 5 µs Accuracy relatively to the calibration source (XOSC_HF). 5.10.3.4 32-kHz RC Oscillator (RCOSC_LF) Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. MIN Calibrated frequency 32.768 Temperature coefficient 14 TYP 50 Specifications MAX UNIT kHz ppm/°C Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 5.10.4 Flash Memory Characteristics Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN Supported flash erase cycles before failure TYP MAX 100 Flash page or sector erase current UNIT k Cycles Average delta current 12.6 mA Flash page or sector erase time (1) 8 ms Flash page or sector size 4 KB 8.15 mA 8 µs Flash write current Average delta current, 4 bytes at a time Flash write time (1) 4 bytes at a time (1) This number is dependent on Flash aging and increases over time and erase cycles. 5.10.5 ADC Characteristics Tc = 25°C, VDDS = 3.0 V, DC-DC disabled. Input voltage scaling enabled, unless otherwise noted (1) PARAMETER TEST CONDITIONS MIN Input voltage range TYP 0 Resolution 12 LSB Gain error Internal 4.3-V equivalent reference (2) –0.14 LSB >–1 LSB ±2 LSB Integral nonlinearity (1) (2) (3) (4) ksamples/s 2.1 INL (4) Effective number of bits Total harmonic distortion SFDR 200 Internal 4.3-V equivalent reference (2) Differential nonlinearity SINAD and SNDR V Bits Offset DNL (3) THD UNIT VDDS Sample rate ENOB MAX Signal-to-noise and distortion ratio Spurious-free dynamic range Internal 4.3-V equivalent reference (2), 200 ksamples/s, 9.6-kHz input tone 10.0 VDDS as reference, 200 ksamples/s, 9.6-kHz input tone 10.2 Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksamples/s, 300-Hz input tone 11.1 Internal 4.3-V equivalent reference (2), 200 ksamples/s, 9.6-kHz input tone –65 VDDS as reference, 200 ksamples/s, 9.6-kHz input tone –72 Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 kspksamples/ss, 300-Hz input tone –75 Internal 4.3-V equivalent reference (2), 200 ksamples/s, 9.6-kHz input tone 62 VDDS as reference, 200 ksamples/s, 9.6-kHz input tone 63 Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksamples/s, 300-Hz input tone 69 Internal 4.3-V equivalent reference (2), 200 ksamples/s, 9.6-kHz input tone 74 VDDS as reference, 200 ksamples/s, 9.6-kHz input tone 75 Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksamples/s, 300-Hz input tone 75 Conversion time Including sampling time Current consumption Internal 4.3-V equivalent reference (2) Current consumption VDDS as reference Reference voltage Internal 4.3-V equivalent reference, voltage scaling enabled (2) Reference voltage Internal 4.3-V equivalent reference, voltage scaling disabled (2) Bits dB dB dB 5 µs 0.66 mA 0.75 mA 4.3 V 1.44 V V V Reference voltage VDDS as reference, voltage scaling disabled VDDS / 2.82 Reference voltage VDDS as reference , voltage scaling enabled VDDS Input Impedance Capacitive input, Input impedance is depending on sampling time and can be increased by increasing sampling time >1 MΩ Using IEEE Std 1241™ 2010 for terminology and test methods. Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V. Applied voltage must be within Absolute Maximum Ratings (Section 5.1) at all times. No missing codes. Positive DNL typically varies from 0.3 to 1.7, depending on the device (see Figure 5-7). For a typical example, see Figure 5-6. Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 15 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 5.10.6 Temperature Sensor Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP Resolution Range –40 Supply voltage coefficient (1) UNIT °C 85 Accuracy (1) MAX 4 °C ±5 °C 3.2 °C/V Automatically compensated when using supplied driver libraries. 5.10.7 Battery Monitor Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP Resolution MAX 50 Range 1.8 mV 3.8 Accuracy UNIT 13 V mV 5.10.8 Continuous Time Comparator Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input voltage range 0 VDDS V External reference voltage 0 VDDS V Internal reference voltage DCOUPL as reference 1.27 Offset 3 mV <2 mV 0.72 µs 8.6 µA Hysteresis Decision time Step from –10 mV to 10 mV Current consumption when enabled (1) (1) V Additionally, the bias module must be enabled when running in standby mode. 5.10.9 Low-Power Clocked Comparator Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS Input voltage range MIN TYP 0 Clock frequency MAX VDDS 32.8 UNIT V kHz Internal reference voltage, VDDS / 2 1.49 – 1.51 V Internal reference voltage, VDDS / 3 1.01 – 1.03 V Internal reference voltage, VDDS / 4 0.78 – 0.79 V Internal reference voltage, DCOUPL / 1 1.25 – 1.28 V Internal reference voltage, DCOUPL / 2 0.63 – 0.65 V Internal reference voltage, DCOUPL / 3 0.42 – 0.44 V Internal reference voltage, DCOUPL / 4 0.33 – 0.34 Offset <2 Hysteresis Decision time Step from –50 mV to 50 mV Current consumption when enabled 16 <5 mV 1 clock-cycle 362 Specifications V mV nA Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 5.10.10 Programmable Current Source Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP Current source programmable output range (1) UNIT µA 0.25 µA 23 µA Resolution Including current source at maximum programmable output Current consumption (1) MAX 0.25 to 20 Additionally, the bias module must be enabled when running in standby mode. 5.10.11 DC Characteristics PARAMETER TEST CONDITIONS MIN TYP 1.32 1.54 MAX UNIT TA = 25°C, VDDS = 1.8 V GPIO VOH at 8-mA load IOCURR = 2, high drive GPIOs only GPIO VOL at 8-mA load IOCURR = 2, high drive GPIOs only GPIO VOH at 4-mA load IOCURR = 1 GPIO VOL at 4-mA load IOCURR = 1 0.21 GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 71.7 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 21.1 µA GPIO high/low input transition, no hysteresis IH = 0, transition between reading 0 and reading 1 0.88 V GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.07 V GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 0.74 V GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.33 V GPIO VOH at 8-mA load IOCURR = 2, high drive GPIOs only 2.68 V GPIO VOL at 8-mA load IOCURR = 2, high drive GPIOs only 0.33 V GPIO VOH at 4-mA load IOCURR = 1 2.72 V GPIO VOL at 4-mA load IOCURR = 1 0.28 V GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 277 µA GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 113 µA GPIO high/low input transition, no hysteresis IH = 0, transition between reading 0 and reading 1 1.67 V GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.94 V GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 1.54 V GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.4 V VIH Lowest GPIO input voltage reliably interpreted as a High VIL Highest GPIO input voltage reliably interpreted as a Low 0.26 1.32 V 0.32 V 1.58 V 0.32 V TA = 25°C, VDDS = 3.0 V TA = 25°C, VDDS = 3.8 V (1) 0.8 VDDS (1) VDDS (1) 0.2 Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.2 for more details. 5.10.12 Synchronous Serial Interface (SSI) Characteristics Tc = 25°C, VDDS = 3.0 V, unless otherwise noted. PARAMETER tclk_per SSIClk cycle time PARAMETER NO. MIN S1 S2 (1) tclk_high (SSIClk high time) S3 (1) (1) tclk_low (SSIClk low time) TYP 12 MAX UNIT 65024 system clocks 0.5 tclk_per 0.5 tclk_per Refer to SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3. Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 17 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com S1 S2 SSIClk S3 SSIFss SSITx SSIRx MSB LSB 4 to 16 bits Figure 5-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement S2 S1 SSIClk S3 SSIFss SSITx MSB LSB 8-bit control SSIRx 0 MSB LSB 4 to 16 bits output data Figure 5-2. SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer 18 Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 S1 S2 SSIClk (SPO = 0) S3 SSIClk (SPO = 1) SSITx (Master) MSB SSIRx (Slave) MSB LSB LSB SSIFss Figure 5-3. SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1 Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 19 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 5.11 Typical Characteristics 3.5 5 3 4.5 Current Consumption (PA) Current Consumption (mA) Active Mode Current 4 3.5 3 2.5 2 1.5 1 0.5 2 1.8 2.3 2.8 VDDS (V) 3.3 0 -40 -30 -20 -10 3.8 0 D007 Figure 5-4. Active Mode (MCU) Current Consumption vs Supply Voltage (VDDS) 10 20 30 40 50 60 70 80 90 Temperature (°C) D010 Figure 5-5. Standby MCU Current Consumption, 32-kHz Clock, RAM and MCU Retention 2 1.5 Differential Nonlinearity (LSB) Integral Nonlinearity (LSB) 2.5 1 0 -1 -2 1 0.5 0 -0.5 -1 0 500 1000 1500 2000 2500 3000 Digital Output Code 3500 4000 0 500 1000 1500 2000 2500 3000 Digital Output Code D007 Figure 5-6. SoC ADC, Integral Nonlinearity vs Digital Output Code 3500 4000 D008 Figure 5-7. SoC ADC, Differential Nonlinearity vs Digital Output Code 1007.5 1006.4 1006.2 1007 1006.5 1005.8 ADC Code ADC Code 1006 1005.6 1005.4 1006 1005.5 1005.2 1005 1005 1004.8 1.8 2.3 2.8 VDDS (V) 3.3 3.8 D012 Figure 5-8. SoC ADC Output vs Supply Voltage (Fixed Input, Internal Reference, No Scaling) 20 1004.5 -40 -30 -20 -10 0 10 20 30 40 Temperature (qC) 50 60 70 80 D013 Figure 5-9. SoC ADC Output vs Temperature (Fixed Input, Internal Reference, No Scaling) Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 -106 -106.5 -107 Sensitivity (dBm) -107.5 -108 -108.5 -109 -109.5 -110 -110.5 -111 863 80 70 70 60 60 50 50 Selectivity (dB) Selectivity (dB) 80 30 20 867 869 871 Frequency (MHz) 873 875 876 D011 Figure 5-11. RX (50-kbps) Sensitivity vs Frequency Figure 5-10. RX, (50-kbps) Packet Error Rate (PER) vs Input RF Level vs Frequency Offset, 868 MHz 40 865 10 40 30 20 10 0 0 -10 -10 -10 -10 -8 -6 -4 -2 0 2 4 Frequency offset (MHz) 6 8 10 -8 -6 D012 Figure 5-12. RX (50-kbps) Selectivity 868 MHz -4 -2 0 2 4 Frequency offset (MHz) 6 8 10 D013 Figure 5-13. RX (50-kbps) Selectivity 915 MHz -106 6 -107 5.8 Sensitivity (dBm) Current Consumption (mA) -106.5 5.6 5.4 -107.5 -108 -108.5 -109 -109.5 -110 5.2 -110.5 5 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Temperature (°C) D014 Figure 5-14. RX (50-kbps) Current Consumption vs Temperature 868 MHz -111 -40 -20 0 20 40 Temperaure (°C) 60 80 90 D015 Figure 5-15. RX (50-kbps) Sensitivity vs Temperature 868 MHz Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 21 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 11 -106.2 10.5 Current Consumption (mA) Sensitivity (dBm) -106.8 -107.4 -108 -108.6 -109.2 -109.8 10 9.5 9 8.5 8 7.5 7 6.5 6 -110.4 5.5 -111 -40 -30 -20 -10 0 5 1.8 10 20 30 40 50 60 70 80 90 Temperaure (°C) D016 -106 23 -106.5 22.9 -107 22.8 -107.5 22.7 -108 -108.5 -109 -110 22.2 22.1 2.4 2.6 2.8 3 VDDS (V) 3.2 3.4 3.6 3.2 3.4 3.6 3.8 D019 22.4 -110.5 2.2 2.6 2.8 3 VDDS (V) 22.5 22.3 2 2.4 22.6 -109.5 -111 1.8 2.2 Figure 5-17. RX (50-kbps) Current Consumption vs Supply Voltage 915 MHz Current (mA) Sensitivity (dBm) Figure 5-16. RX (50-kbps) Sensitivity vs Temperature 915 MHz 2 22 -40 3.8 -20 0 20 40 Temperature (qC) D020 60 80 100 D003 DCDC On, 3.6 V Figure 5-19. TX Current Consumption With Maximum Output Power vs Temperature 868 MHz Figure 5-18. RX (50-kbps) Sensitivity vs Supply Voltage 868 MHz 11 14.8 10.6 14.6 Output Power (dBm) Output Power (dBm) 10.8 14.4 14.2 10.4 10.2 10 9.8 9.6 9.4 14 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Temperature (°C) D017 9.2 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Temperature (°C) D018 Figure 5-21. TX 10-dBm Output Power vs Temperature 868 MHz Figure 5-20. TX Maximum Output vs Temperature 868 MHz 22 Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 40 14.8 35 Output Power (dBm) Current Consumption (mA) 14.7 30 25 14.6 14.5 14.4 14.3 14.2 14.1 20 2.1 2.3 2.5 2.7 2.9 3.1 VDDS (V) 3.3 3.5 14 2.1 3.7 2.3 2.5 2.7 D021 Figure 5-22. TX Current Consumption Maximum Output Power vs Supply Voltage 868 MHz 2.9 3.1 VDDS (V) 3.3 3.5 3.7 D022 Figure 5-23. TX Maximum Output Power vs Supply Voltage 915 MHz 11 10.8 Output Power (dBm) 10.6 10.4 10.2 10 9.8 9.6 9.4 9.2 1.8 2 2.2 2.4 2.6 2.8 3 VDDS (V) 3.2 3.4 3.6 3.8 D023 Figure 5-24. TX 10-dBm Output Power vs Supply Voltage 868 MHz Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 23 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com 6 Detailed Description 6.1 Overview Section 1.4 shows a block diagram of the core modules of the CC13xx product family. 6.2 Main CPU The SimpleLink CC1310 Wireless MCU contains an ARM Cortex-M3 (CM3) 32-bit CPU, which runs the application and the higher layers of the protocol stack. The CM3 processor provides a high-performance, low-cost platform that meets the system requirements of minimal memory implementation, and low-power consumption, while delivering outstanding computational performance and exceptional system response to interrupts. CM3 features include the following: • 32-bit ARM Cortex-M3 architecture optimized for small-footprint embedded applications • Outstanding processing performance combined with fast interrupt handling • ARM Thumb®-2 mixed 16- and 32-bit instruction set delivers the high performance expected of a 32-bit ARM core in a compact memory size usually associated with 8- and 16-bit devices, typically in the range of a few kilobytes of memory for microcontroller-class applications: – Single-cycle multiply instruction and hardware divide – Atomic bit manipulation (bit-banding), delivering maximum memory use and streamlined peripheral control – Unaligned data access, enabling data to be efficiently packed into memory • Fast code execution permits slower processor clock or increases sleep mode time • Harvard architecture characterized by separate buses for instruction and data • Efficient processor core, system, and memories • Hardware division and fast digital-signal-processing oriented multiply accumulate • Saturating arithmetic for signal processing • Deterministic, high-performance interrupt handling for time-critical applications • Enhanced system debug with extensive breakpoint and trace capabilities • Serial wire trace reduces the number of pins required for debugging and tracing • Migration from the ARM7™ processor family for better performance and power efficiency • Optimized for single-cycle flash memory use • Ultralow power consumption with integrated sleep modes • 1.25 DMIPS per MHz 24 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com 6.3 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 RF Core The RF core is a highly flexible and capable radio system that interfaces the analog RF and base-band circuits, handles data to and from the system side, and assembles the information bits in a given packet structure. The RF core can autonomously handle the time-critical aspects of the radio protocols, thus offloading the main CPU and leaving more resources for the user application. The RF core offers a high-level, command-based API to the main CPU. The RF core supports a wide range of modulation formats, frequency bands, and accelerator features, which include the following (not all of the features have been characterized yet, see CC1310 SimpleLink Wireless MCU Silicon Errata, SWRZ062, for more information): • Wide range of data rates: – From 625 bps (offering long range and high robustness) to as high as 4 Mbps • Wide range of modulation formats: – Multilevel (G)FSK and MSK – On-Off Keying (OOK) with optimized shaping to minimize adjacent channel leakage – Coding-gain support for long range • Dedicated packet handling accelerators: – Forward error correction – Data whitening – 802.15.4g mode-switch support – Automatic CRC • Automatic listen-before-talk (LBT) and clear channel assist (CCA) • Digital RSSI • Highly configurable channel filtering, supporting channel spacing schemes from 40 kHz to 4 MHz • High degree of flexibility, offering a future-proof solution The RF core interfaces a highly flexible radio, with a high-performance synthesizer that can support a wide range of frequency bands. Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 25 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 6.4 www.ti.com Sensor Controller The Sensor Controller contains circuitry that can be selectively enabled in standby mode. The peripherals in this domain may be controlled by the Sensor Controller Engine, which is a proprietary power-optimized CPU. This CPU can read and monitor sensors or perform other tasks autonomously; thereby significantly reducing power consumption and offloading the main CM3 CPU. A PC-based development tool called Sensor Controller Studio is used to write, test and debug code for Sensor Controller. The tool produces C driver source code, which the System CPU application uses to control and exchange data with the Sensor Controller Typical use cases may be (but are not limited to) the following: • Analog sensors using integrated ADC • Digital sensors using GPIOs and bit-banged I2C and/or SPI • Capacitive sensing • Waveform generation • Pulse counting • Key scan • Quadrature decoder for polling rotation sensors The peripherals in the Sensor Controller include the following: • The low-power clocked comparator can be used to wake the device from any state in which the comparator is active. A configurable internal reference can be used in conjunction with the comparator. The output of the comparator can also be used to trigger an interrupt or the ADC. • Capacitive sensing functionality is implemented through the use of a constant current source, a timeto-digital converter, and a comparator. The continuous time comparator in this block can also be used as a higher-accuracy alternative to the low-power clocked comparator. The Sensor Controller takes care of baseline tracking, hysteresis, filtering, and other related functions. • The ADC is a 12-bit, 200 ksamples/s ADC with eight inputs and a built-in voltage reference. The ADC can be triggered by many different sources, including timers, I/O pins, software, the analog comparator, and the RTC. • The analog modules can be connected to up to eight different GPIOs The peripherals in the Sensor Controller can also be controlled from the main application processor. 26 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Table 6-1. GPIOs Connected to the Sensor Controller (1) (1) 6.5 ANALOG CAPABLE 7-mm × 7-mm RGZ DIO NUMBER Y 30 Y 29 Y 28 Y 27 Y 26 Y 25 Y 24 Y 23 N 7 N 6 N 5 N 4 N 3 N 2 N 1 Up to 15 pins can be connected to the Sensor Controller. Up to 8 of these pins can be connected to analog modules. Memory The flash memory provides nonvolatile storage for code and data. The flash memory is in-system programmable. The SRAM (static RAM) is split into two 4-KB blocks and two 6-KB blocks and can be used for both storage of data and execution of code. Retention of the RAM contents in standby mode can be enabled or disabled individually for each block to minimize power consumption. In addition, if flash cache is disabled, the 8-KB cache can be used as a general-purpose RAM. The ROM provides preprogrammed, embedded TI RTOS kernel and Driverlib. It also contains a bootloader that can be used to reprogram the device using SPI or UART. 6.6 Debug The on-chip debug support is done through a dedicated cJTAG (IEEE 1149.7) or JTAG (IEEE 1149.1) interface. Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 27 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 6.7 www.ti.com Power Management To minimize power consumption, the CC1310 supports a number of power modes and power management features (see Table 6-2). Table 6-2. Power Modes SOFTWARE CONFIGURABLE POWER MODES ACTIVE IDLE STANDBY SHUTDOWN RESET PIN HELD CPU Active Off Off Off Off Flash On Available Off Off Off SRAM On On On Off Off Radio Available Available Off Off Off MODE Supply System Current Wake-up Time to CPU Active (1) Register Retention SRAM Retention On On Duty Cycled Off Off 1.2 mA + 25.5 µA/MHz 570 µA 0.6 µA 185 nA 0.1 µA – 14 µs 174 µs 1015 µs 1015 µs Full Full Partial No No Full Full Full No No High-Speed Clock XOSC_HF or RCOSC_HF XOSC_HF or RCOSC_HF Off Off Off Low-Speed Clock XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF XOSC_LF or RCOSC_LF Off Off Peripherals Available Available Off Off Off Sensor Controller Available Available Available Off Off Wake-up on RTC Available Available Available Off Off Wake-up on Pin Edge Available Available Available Available Off Wake-up on Reset Pin Available Available Available Available Available Brown Out Detector (BOD) Active Active Duty Cycled (2) Off N/A Power On Reset (POR) Active Active Active Active N/A (1) (2) Not including RTOS overhead The Brown Out Detector is disabled between recharge periods in STANDBY. Lowering the supply voltage below the BOD threshold between two recharge periods while in STANDBY may cause the BOD to lock the device upon wake-up until a Reset/POR releases it. To avoid this, it is recommended that STANDBY mode is avoided if there is a risk that the supply voltage (VDDS) may drop below the specified operating voltage range. For the same reason, it is also good practice to ensure that a power cycling operation, such as a battery replacement, triggers a Power-on-reset by ensuring that the VDDS decoupling network is fully depleted before applying supply voltage again (for example, inserting new batteries). In active mode, the application CM3 CPU is actively executing code. Active mode provides normal operation of the processor and all of the peripherals that are currently enabled. The system clock can be any available clock source (see Table 6-2). In idle mode, all active peripherals can be clocked, but the Application CPU core and memory are not clocked and no code is executed. Any interrupt event brings the processor back into active mode. In standby mode, only the always-on (AON) domain is active. An external wake-up event, RTC event, or Sensor Controller event is required to bring the device back to active mode. MCU peripherals with retention do not need to be reconfigured when waking up again, and the CPU continues execution from where it went into standby mode. All GPIOs are latched in standby mode. In shutdown mode, the device is entirely turned off (including the AON domain and Sensor Controller), and the I/Os are latched with the value they had before entering shutdown mode. A change of state on any I/O pin defined as a wake from shutdown pin wakes up the device and functions as a reset trigger. The CPU can differentiate between reset in this way and reset-by-reset pin or power-on-reset by reading the reset status register. The only state retained in this mode is the latched I/O state and the flash memory contents. 28 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 The Sensor Controller is an autonomous processor that can control the peripherals in the Sensor Controller independently of the main CPU. This means that the main CPU does not have to wake up, for example to execute an ADC sample or poll a digital sensor over SPI, thus saving both current and wakeup time that would otherwise be wasted. The Sensor Controller Studio enables the user to configure the Sensor Controller and to choose which peripherals are controlled and which conditions wake up the main CPU. 6.8 Clock Systems The CC1310 supports two external and two internal clock sources. A 24-MHz external crystal is required as the frequency reference for the radio. This signal is doubled internally to create a 48-MHz clock. The 32.768-kHz crystal is optional. The low-speed crystal oscillator is designed for use with a 32.768-kHz watch-type crystal. The internal high-speed RC oscillator (48-MHz) can be used as a clock source for the CPU subsystem. The internal low-speed RC oscillator (32-kHz) can be used as a reference if the low-power crystal oscillator is not used. The 32-kHz clock source can be used as external clocking reference through GPIO. 6.9 General Peripherals and Modules The I/O controller controls the digital I/O pins and contains multiplexer circuitry to allow a set of peripherals to be assigned to I/O pins in a flexible manner. All digital I/Os are interrupt and wake-up capable, have a programmable pullup and pulldown function, and can generate an interrupt on a negative or positive edge (configurable). When configured as an output, pins can function as either push-pull or open-drain. Five GPIOs have high-drive capabilities, which are marked in bold in Section 4. The SSIs are synchronous serial interfaces that are compatible with SPI, MICROWIRE, and Texas Instruments' synchronous serial interfaces. The SSIs support both SPI master and slave up to 4 MHz. The UART implements a universal asynchronous receiver and transmitter function. It supports flexible baud-rate generation up to a maximum of 3 Mbps. Timer 0 is a general-purpose timer module (GPTM) that provides two 16-bit timers. The GPTM can be configured to operate as a single 32-bit timer, dual 16-bit timers, or as a PWM module. Timer 1, Timer 2, and Timer 3 are also GPTMs. Each of these timers is functionally equivalent to Timer 0. In addition to these four timers, the RF core has its own timer to handle timing for RF protocols; the RF timer can be synchronized to the RTC. The I2S interface is used to handle digital audio see the CC13xx, CC26xx SimpleLink™ Wireless MCU Technical Reference Manual (SWCU117) for more information. The I2C interface is used to communicate with devices compatible with the I2C standard. The I2C interface can handle 100 kHz and 400 kHz operation, and can serve as both I2C master and I2C slave. The TRNG module provides a true, nondeterministic noise source for the purpose of generating keys, initialization vectors (IVs), and other random number requirements. The TRNG is built on 24 ring oscillators that create unpredictable output to feed a complex nonlinear-combinatorial circuit. The watchdog timer is used to regain control if the system fails due to a software error after an external device fails to respond as expected. The watchdog timer can generate an interrupt or a reset when a predefined time-out value is reached. Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 29 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 www.ti.com The device includes a direct memory access (µDMA) controller. The µDMA controller provides a way to offload data-transfer tasks from the CM3 CPU, thus allowing for more efficient use of the processor and the available bus bandwidth. The µDMA controller can perform transfer between memory and peripherals. The µDMA controller has dedicated channels for each supported on-chip module and can be programmed to automatically perform transfers between peripherals and memory as the peripheral is ready to transfer more data. Some features of the µDMA controller include the following (this is not an exhaustive list): • Highly flexible and configurable channel operation of up to 32 channels • Transfer modes: memory-to-memory, memory-to-peripheral, peripheral-to-memory, and peripheral-to-peripheral • Data sizes of 8, 16, and 32 bits The AON domain contains circuitry that is always enabled, except for in shutdown mode (where the digital supply is off). This circuitry includes the following: • The RTC can be used to wake the device from any state where it is active. The RTC contains three compare and one capture registers. With software support, the RTC can be used for clock and calendar operation. The RTC is clocked from the 32-kHz RC oscillator or crystal. The RTC can also be compensated to tick at the correct frequency even when the internal 32-kHz RC oscillator is used instead of a crystal. • The battery monitor and temperature sensor are accessible by software and provide a battery status indication as well as a coarse temperature measure. 6.10 System Architecture Depending on the product configuration, CC1310 can function as a wireless network processor (WNP – an IC running the wireless protocol stack, with the application running on a separate host MCU), or as a system-on-chip (SoC) with the application and protocol stack running on the ARM CM3 core inside the device. In the first case, the external host MCU communicates with the device using SPI or UART. In the second case, the application must be written according to the application framework supplied with the wireless protocol stack. 30 Detailed Description Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 7 Application, Implementation, and Layout NOTE Information in the following Applications section is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. Few external components are required for the operation of the CC1310 device. Figure 7-1 shows a typical application circuit. The board layout greatly influences the RF performance of the CC1310 device. On the Texas Instruments CC1310EM-7XD-7793, the optimal differential impedance seen from the RF pins into the balun and filter and antenna is 44 +j15. Red = Not Necessary if Internal Bias is Used Antenna (50 ) Pin 3 (RXTX) Optional Inductor. Only Needed for DCDC Operation Pin 2 (RF N) Pin 1 (RF P) DC Block Differential Operation Red = Not Necessary if Internal Bias is Used CC13xx (GND exposed die attached pad) Pin 3 (RXTX) Pin 2 (RF N) Antenna (50 ) Pin 2 (RF N) DC Block Pin 1 (RF P) Pin 1 (RF P) Single-Ended Operation Red = Not Necessary if Internal Bias is Used Pin 3 (RXTX) 24MHz XTAL (Load Caps on Chip) Antenna (50 ) DC Block Pin 2 (RF N) Single-Ended Operation With Antenna Diversity Antenna (50 ) DC Block Pin 1 (RF P) Figure 7-1 does not show decoupling capacitors for power pins. For a complete reference design, see the product folder on www.ti.com. Figure 7-1. Differential Reference Design Application, Implementation, and Layout Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 31 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 7.1 www.ti.com TI Design Humidity and Temp Sensor Node for Sub-1GHz Star Networks Enabling 10+ Year Coin Cell Battery Life This TI Design uses Texas Instruments' nano-power system timer, boost converter, SimpleLink ultralow power Sub-1-GHz wireless microcontroller (MCU) platform, and humidity sensing technologies to demonstrate an ultralow power method to duty-cycle sensor end nodes leading to extremely long battery life. The TI Design includes techniques for system design, detailed test results, and information to get the design up and running quickly. 32 Application, Implementation, and Layout Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 8 Device and Documentation Support 8.1 8.1.1 Device Support Development Support TI offers an extensive line of development tools, including tools to evaluate the performance of the processors, generate code, develop algorithm implementations, and fully integrate and debug software and hardware modules. The following products support development of the CC1310 device applications: Software Tools: SmartRF Studio 7: SmartRF Studio is a PC application that helps designers of radio systems to easily evaluate the RF-IC at an early stage in the design process. • Test functions for sending and receiving radio packets, continuous wave transmit and receive • Evaluate RF performance on custom boards by wiring it to a supported evaluation board or debugger • Can also be used without any hardware, but then only to generate, edit and export radio configuration settings • Can be used in combination with several development kits for Texas Instruments’ CCxxxx RF-ICs Sensor Controller Studio: Sensor Controller Studio provides a development environment for the CC13xx Sensor Controller. The Sensor Controller is a proprietary, power-optimized CPU in the CC13xx, which can perform simple background tasks autonomously and independent of the System CPU state. • Allows for Sensor Controller task algorithms to be implemented using a C-like programming language • Outputs a Sensor Controller Interface driver, which incorporates the generated Sensor Controller machine code and associated definitions • Allows for rapid development by using the integrated Sensor Controller task testing and debugging functionality. This allows for live visualization of sensor data and algorithm verification. IDEs and Compilers: Code Composer Studio: • Integrated development environment with project management tools and editor • Code Composer Studio (CCS) 6.1 and later has built-in support for the CC13xx device family • Best support for XDS debuggers; XDS100v3, XDS110 and XDS200 • High integration with TI-RTOS with support for TI-RTOS Object View IAR Embedded Workbench for ARM • Integrated development environment with project management tools and editor • IAR EWARM 7.30.3 and later has built-in support for the CC13xx device family • Broad debugger support, supporting XDS100v3, XDS200, IAR I-Jet and Segger J-Link • Integrated development environment with project management tools and editor • RTOS plugin available for TI-RTOS For a complete listing of development-support tools for the CC1310 platform, visit the Texas Instruments website at www.ti.com. For information on pricing and availability, contact the nearest TI field sales office or authorized distributor. 8.1.2 Reference Designs Humidity and Temp Sensor Node for Sub-1GHz Star Networks Enabling 10+ Year Coin Cell Battery Life (TIDA-00484) Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 33 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 8.1.3 www.ti.com Device Nomenclature To designate the stages in the product development cycle, TI assigns prefixes to all part numbers and/or date-code. Each device has one of three prefixes/identifications: X, P, or null (no prefix) (for example, CC1310 is in production; therefore, no prefix/identification is assigned). Device development evolutionary flow: X Experimental device that is not necessarily representative of the final device's electrical specifications and may not use production assembly flow. P Prototype device that is not necessarily the final silicon die and may not necessarily meet final electrical specifications. null Production version of the silicon die that is fully qualified. Production devices have been characterized fully, and the quality and reliability of the device have been demonstrated fully. TI's standard warranty applies. Predictions show that prototype devices (X or P) have a greater failure rate than the standard production devices. Texas Instruments recommends that these devices not be used in any production system because their expected end-use failure rate still is undefined. Only qualified production devices are to be used. TI device nomenclature also includes a suffix with the device family name. This suffix indicates the package type (for example, RGZ). For orderable part numbers of CC1310 devices in the RGZ (7-mm × 7-mm) package types, see the Package Option Addendum of this document, the TI website (www.ti.com), or contact your TI sales representative. 34 Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 CC1310 www.ti.com 8.2 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 Documentation Support The following documents describe the CC1310. Copies of these documents are available on the Internet at www.ti.com. • CC13xx, CC26xx SimpleLink™ Wireless MCU Technical Reference Manual (SWCU117) • CC26xx/CC13xx Power Management Software Developer's Reference Guide (SWRS486) • Using GCC/GDB With SimpleLink™ CC26xx/CC13xx Application Report (SWRA446) 8.2.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. TI Embedded Processors Wiki Texas Instruments Embedded Processors Wiki. Established to help developers get started with Embedded Processors from Texas Instruments and to foster innovation and growth of general knowledge about the hardware and software surrounding these devices. 8.2.2 Texas Instruments Low-Power RF Website Texas Instruments' Low-Power RF website has all the latest products, application and design notes, FAQ section, news and events updates. Go to www.ti.com/lprf. 8.2.3 Low-Power RF Online Community • • • Forums, videos, and blogs RF design help E2E interaction Join at: www.ti.com/lprf-forum. 8.2.4 Texas Instruments Low-Power RF Developer Network Texas Instruments has launched an extensive network of low-power RF development partners to help customers speed up their application development. The network consists of recommended companies, RF consultants, and independent design houses that provide a series of hardware module products and design services, including: • RF circuit, low-power RF, and ZigBee® design services • Low-power RF and ZigBee module solutions and development tools • RF certification services and RF circuit manufacturing For help with modules, engineering services or development tools: Search the Low-Power RF Developer Network to find a suitable partner. www.ti.com/lprfnetwork 8.2.5 Low-Power RF eNewsletter The Low-Power RF eNewsletter is up-to-date on new products, news releases, developers’ news, and other news and events associated with low-power RF products from TI. The Low-Power RF eNewsletter articles include links to get more online information. Sign up at: www.ti.com/lprfnewsletter Device and Documentation Support Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: CC1310 35 CC1310 SWRS181A – SEPTEMBER 2015 – REVISED SEPTEMBER 2015 8.3 www.ti.com Additional Information Texas Instruments offers a wide selection of cost-effective, low-power RF solutions for proprietary and standard-based wireless applications for use in industrial and consumer applications. The selection includes RF transceivers, RF transmitters, RF front ends, and Systems-on-Chips as well as various software solutions for the sub-1-GHz and 2.4-GHz frequency bands. In addition, Texas Instruments provides a large selection of support collateral such as development tools, technical documentation, reference designs, application expertise, customer support, third-party and university programs. Other than providing technical support forums, videos, and blogs, the Low-Power RF E2E Online Community also presents the opportunity to interact with engineers from all over the world. With a broad selection of product solutions, end-application possibilities, and a range of technical support, Texas Instruments offers the broadest low-power RF portfolio. 8.4 Trademarks IAR Embedded Workbench is a registered trademark of IAR Systems AB. SimpleLink, SmartRF, Code Composer Studio, E2E are trademarks of Texas Instruments. ARM7 is a trademark of ARM Limited (or its subsidiaries). ARM, Cortex, ARM Thumb are registered trademarks of ARM Limited (or its subsidiaries). ULPBench is a trademark of Embedded Microprocessor Benchmark Consortium. CoreMark is a registered trademark of Embedded Microprocessor Benchmark Consortium. IEEE Std 1241 is a trademark of Institute of Electrical and Electronics Engineers, Incorporated. ZigBee is a registered trademark of Zigbee Alliance. 8.5 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 8.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms and definitions. 9 Mechanical Packaging and Orderable Information 9.1 Packaging Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 36 Mechanical Packaging and Orderable Information Submit Documentation Feedback Product Folder Links: CC1310 Copyright © 2015, Texas Instruments Incorporated PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CC1310F128RGZR ACTIVE VQFN RGZ 48 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F128RGZT ACTIVE VQFN RGZ 48 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F128RHBR PREVIEW VQFN RHB 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F128RHBT PREVIEW VQFN RHB 32 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F128RSMR PREVIEW VQFN RSM 32 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F128RSMT PREVIEW VQFN RSM 32 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F128 CC1310F32RGZR ACTIVE VQFN RGZ 48 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F32 CC1310F32RGZT ACTIVE VQFN RGZ 48 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F32 CC1310F32RHBR PREVIEW VQFN RHB 32 3000 TBD Call TI Call TI -40 to 85 CC1310 F32 CC1310F32RHBT PREVIEW VQFN RHB 32 250 TBD Call TI Call TI -40 to 85 CC1310 F32 CC1310F32RSMR PREVIEW VQFN RSM 32 3000 TBD Call TI Call TI -40 to 85 CC1310 F32 CC1310F32RSMT PREVIEW VQFN RSM 32 250 TBD Call TI Call TI -40 to 85 CC1310 F32 CC1310F64RGZR ACTIVE VQFN RGZ 48 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F64 CC1310F64RGZT ACTIVE VQFN RGZ 48 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 85 CC1310 F64 CC1310F64RHBR PREVIEW VQFN RHB 32 2500 TBD Call TI Call TI -40 to 85 CC1310 F64 CC1310F64RHBT PREVIEW VQFN RHB 32 250 TBD Call TI Call TI -40 to 85 CC1310 F64 CC1310F64RSMR PREVIEW VQFN RSM 32 3000 TBD Call TI Call TI -40 to 85 CC1310 F64 Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 14-Oct-2015 Status (1) CC1310F64RSMT PREVIEW Package Type Package Pins Package Drawing Qty VQFN RSM 32 250 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) TBD Call TI Call TI Op Temp (°C) Device Marking (4/5) -40 to 85 CC1310 F64 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 Samples PACKAGE MATERIALS INFORMATION www.ti.com 10-Oct-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant CC1310F32RGZR VQFN RGZ 48 2500 330.0 16.4 7.3 7.3 1.1 12.0 16.0 Q2 CC1310F64RGZR VQFN RGZ 48 2500 330.0 16.4 7.3 7.3 1.1 12.0 16.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 10-Oct-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CC1310F32RGZR VQFN RGZ 48 2500 367.0 367.0 38.0 CC1310F64RGZR VQFN RGZ 48 2500 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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