Thyristor SMD Type Low Power Use Non-Insulated Type,Glass Passivation Type CR08AS Features 1.70 0.1 IT(AV) :0.8A VDRM :400V/600V IGT :100 A 0.42 0.1 0.46 0.1 1.GATE 2.ANODE 3.CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol CR08AS-8 CR08AS-12 Unit Repetitive peak reverse voltage VRRM 400 600 V Non-repetitive peak reverse voltage VRSM 500 720 V DC reverse voltage VR(DC) 320 480 V Repetitive peak off-state voltage *1 VDRM 400 600 V DC off-state voltage *1 VD(DC) 320 RMS on-state current IT(RMS) 1.26 A Average on-state current IT(AV) 0.8 A Surge on-state current ITSM 10 A 2 It 0.42 A2s 2 I t for fusing Peak gate power dissipation Average gate power dissipation 480 V PGM 0.5 W PG(AV) 0.1 W Peak gate forward voltage VFGM 6 V Peak gate reverse voltage VRGM 6 V Peak gate forward current A IFGM 0.3 Junction temperature Tj -40 to +125 Storage temperature Tstg -40 to +125 *1 With Gate-to-cathode resistance RGK=1k www.kexin.com.cn 1 Thyristor SMD Type CR08AS Electrical Characteristics Ta = 25 Parameter Symbol Repetitive peak reverse current IRRM Repetitive peak off-state current IDRM On-state voltage Max Unit Tj=125 , VRRM applied,RGK=1k 0.5 mA Tj=125 , VDRM applied, RGK=1k 0.5 mA VTM Ta=25 , ITM=2.5A, instantaneous value 1.5 V Gate trigger voltage VGT Ta=25 , VD=6V, IT=0.1A*1 Gate non-trigger voltage VGD Tj=125 , VD=1/2VDRM, RGK=1k Gate trigger current IGT Tj=25 , VD=6V, IT=0.1A *1 Holding current IH Thermal resistance Rth (j-a) Testconditi ons Min Typ. 0.8 0.2 1 100 1.5 Tj=25 , VD=12V, RGK=1k Junction to ambient *1 IGT, VGT measurement circuit. *2 If special values of IGT are required, choose at least two items from those listed in the table below. Item A B C IGT ( A) 1 to 30 20 to 50 40 to 100 Marking CRO8AS-12 Marking AD AF MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0 1 2 3 4 ON-STATE VOLTAGE (V) 2 www.kexin.com.cn 5 10 SURGE ON-STATE CURRENT (A) CRO8AS-8 ON-STATE CURRENT (A) NO. RATED SURGE ON-STATE CURRENT 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) V V *2 A 3 mA 65 W Thyristor SMD Type CR08AS 7 5 3 2 VFGM = 6V 101 7 5 3 2 PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.3A 10–2 10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) 102 GATE VOLTAGE (V) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE GATE CHARACTERISTICS 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 102 7 5 3 2 101 7 5 3 2 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ = 30° 90° 180° 40 60° 120° 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) www.kexin.com.cn 3 Thyristor SMD Type 100 360° NATURAL CONVECTION θ = 180° 80 65°C/W 120 60 40 20 0 AMBIENT TEMPERATURE (°C) 90°C/W Rth(j – a) = 200°C/W 0 AVERAGE POWER DISSIPATION (W) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 θ LOADS 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 1.6 θ = 30° 60° 90° 120° 1.4 180° 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° 0 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ θ WITH SOLDERING 360° 120 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 1.6 90° 180° θ = 30° 60° 120° 270° 1.4 DC RESISTIVE LOADS NATURAL CONVECTION 100 80 60 40 60° 120° θ = 30° 90° 180° 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.2 1.0 0.8 0.6 40 θ = 30° 60° 120° 270° 20 0 90° 0 180° DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) www.kexin.com.cn 360° 0.2 0 0 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) 100 (%) BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD θ WITH SOLDERING 360° 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 θ 0.4 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) RESISTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) 0 4 0 θ AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) CR08AS 160 140 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 120 100 RGK = 1kΩ 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Thyristor SMD Type 100 80 60 40 20 Tj = 125°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 100 (%) TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25°C) = 35µA 3 2 100 7 5 3 2 10–1 7 5 3 2 100 (%) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RGK = 1kΩ 10–2 –60 –40 –20 0 20 40 60 80 100 120 140 4.0 Tj = 25°C TURN-ON TIME (µs) 3.0 2.5 2.0 1.5 1.0 0.5 0 100 101 GATE TRIGGER CURRENT (µA) TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 25µA 0.9mA 300 200 #1 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) HOLDING CURRENT VS. GATE TRIGGER CURRENT 3.5 500 400 JUNCTION TEMPERATURE (°C) HOLDING CURRENT (mA) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C RGK = 1kΩ 140 GATE TO CATHODE RESISTANCE (kΩ) HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 (%) CR08AS 102 TURN-ON TIME VS. GATE CURRENT 102 VD = 100V 7 TYPICAL EXAMPLE 5 RL = 47Ω 3 RGK = 1kΩ 2 Ta = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) www.kexin.com.cn 5 Thyristor SMD Type 40 30 TYPICAL EXAMPLE 25 DISTRIBUTION 20 15 10 5 0 0 20 40 60 80 100 120 140 160 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 5 3 2 Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 10µA #1 # 2 65µA #2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) 6 www.kexin.com.cn REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 320 THERMAL IMPEDANCE (°C/W) TURN-OFF TIME (µs) VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) CR08AS THERMAL IMPEDANCE VS. BOARD DIMENSIONS 280 240 200 WITHOUT EPOXY PLATE 160 120 80 t0.7 40 10×10 EPOXY PLATE ALUMINUM WITH COPPER FOIL BOARD 0 0 10 20 30 40 50 60 70 80 BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE