Kexin CR08AS Low power use non-insulated type Datasheet

Thyristor
SMD Type
Low Power Use
Non-Insulated Type,Glass Passivation Type
CR08AS
Features
1.70
0.1
IT(AV) :0.8A
VDRM :400V/600V
IGT :100 A
0.42 0.1
0.46 0.1
1.GATE
2.ANODE
3.CATHODE
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
CR08AS-8
CR08AS-12
Unit
Repetitive peak reverse voltage
VRRM
400
600
V
Non-repetitive peak reverse voltage
VRSM
500
720
V
DC reverse voltage
VR(DC)
320
480
V
Repetitive peak off-state voltage *1
VDRM
400
600
V
DC off-state voltage *1
VD(DC)
320
RMS on-state current
IT(RMS)
1.26
A
Average on-state current
IT(AV)
0.8
A
Surge on-state current
ITSM
10
A
2
It
0.42
A2s
2
I t for fusing
Peak gate power dissipation
Average gate power dissipation
480
V
PGM
0.5
W
PG(AV)
0.1
W
Peak gate forward voltage
VFGM
6
V
Peak gate reverse voltage
VRGM
6
V
Peak gate forward current
A
IFGM
0.3
Junction temperature
Tj
-40 to +125
Storage temperature
Tstg
-40 to +125
*1 With Gate-to-cathode resistance RGK=1k
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1
Thyristor
SMD Type
CR08AS
Electrical Characteristics Ta = 25
Parameter
Symbol
Repetitive peak reverse current
IRRM
Repetitive peak off-state current
IDRM
On-state voltage
Max
Unit
Tj=125 , VRRM applied,RGK=1k
0.5
mA
Tj=125 , VDRM applied, RGK=1k
0.5
mA
VTM
Ta=25 , ITM=2.5A, instantaneous value
1.5
V
Gate trigger voltage
VGT
Ta=25 , VD=6V, IT=0.1A*1
Gate non-trigger voltage
VGD
Tj=125 , VD=1/2VDRM, RGK=1k
Gate trigger current
IGT
Tj=25 , VD=6V, IT=0.1A *1
Holding current
IH
Thermal resistance
Rth (j-a)
Testconditi ons
Min
Typ.
0.8
0.2
1
100
1.5
Tj=25 , VD=12V, RGK=1k
Junction to ambient
*1 IGT, VGT measurement circuit.
*2 If special values of IGT are required, choose at least two items from those listed in the table below.
Item
A
B
C
IGT ( A)
1 to 30
20 to 50
40 to 100
Marking
CRO8AS-12
Marking
AD
AF
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
ON-STATE VOLTAGE (V)
2
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5
10
SURGE ON-STATE CURRENT (A)
CRO8AS-8
ON-STATE CURRENT (A)
NO.
RATED SURGE ON-STATE CURRENT
9
8
7
6
5
4
3
2
1
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
V
V
*2
A
3
mA
65
W
Thyristor
SMD Type
CR08AS
7
5
3
2
VFGM = 6V
101
7
5
3
2
PGM = 0.5W
PG(AV) = 0.1W
VGT = 0.8V
100
7
5
3
2
IGT = 100µA
(Tj = 25°C)
10–1
7
5
3
2
VGD = 0.2V
IFGM = 0.3A
10–2
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
100 (%)
102
GATE VOLTAGE (V)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
GATE CHARACTERISTICS
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
0.9
DISTRIBUTION
0.8
TYPICAL EXAMPLE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
GATE TRIGGER VOLTAGE (V)
JUNCTION TEMPERATURE (°C)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7 25 25 t0.7
5 ALUMINUM BOARD
3 WITH SOLDERING
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
θ
0.2
360°
0
0
RESISTIVE, INDUCTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
RESISTIVE,
100
INDUCTIVE
LOADS
80
NATURAL
CONVECTION
60
θ = 30° 90° 180°
40
60° 120°
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
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3
Thyristor
SMD Type
100
360°
NATURAL
CONVECTION
θ = 180°
80
65°C/W
120
60
40
20
0
AMBIENT TEMPERATURE (°C)
90°C/W
Rth(j – a) = 200°C/W
0
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
INDUCTIVE
140
θ
LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
1.6
θ = 30° 60° 90° 120°
1.4
180°
1.2
1.0
0.8
0.6
0.4
θ
0.2
360°
0
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ θ
WITH SOLDERING
360°
120
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
1.6
90° 180°
θ = 30° 60° 120° 270°
1.4
DC
RESISTIVE LOADS
NATURAL
CONVECTION
100
80
60
40
60°
120°
θ = 30°
90°
180°
20
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.2
1.0
0.8
0.6
40
θ = 30° 60° 120° 270°
20
0
90°
0
180°
DC
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
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360°
0.2
0
0
RESISTIVE,
INDUCTIVE
LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
100 (%)
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
25 25 t0.7
140 ALUMINUM BOARD
θ
WITH SOLDERING
360°
120
RESISTIVE,
100
INDUCTIVE
LOADS
80
NATURAL
CONVECTION
60
θ
0.4
AVERAGE ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (°C)
RESISTIVE LOADS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
0
4
0
θ
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
CR08AS
160
140
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
120
100
RGK = 1kΩ
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Thyristor
SMD Type
100
80
60
40
20
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
100 (%)
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
120
100
80
60
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
101
7 DISTRIBUTION
TYPICAL EXAMPLE
5
IGT (25°C) = 35µA
3
2
100
7
5
3
2
10–1
7
5
3
2
100 (%)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
4.0
Tj = 25°C
TURN-ON TIME (µs)
3.0
2.5
2.0
1.5
1.0
0.5
0
100
101
GATE TRIGGER CURRENT (µA)
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
# 1 25µA
0.9mA
300
200
#1
100
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
3.5
500
400
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
RGK = 1kΩ
140
GATE TO CATHODE RESISTANCE (kΩ)
HOLDING CURRENT (RGK = rkΩ)
HOLDING CURRENT (RGK = 1kΩ)
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE (RGK = rkΩ)
BREAKOVER VOLTAGE (RGK = 1kΩ)
100 (%)
CR08AS
102
TURN-ON TIME VS. GATE CURRENT
102
VD = 100V
7 TYPICAL EXAMPLE
5
RL = 47Ω
3
RGK = 1kΩ
2
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT (mA)
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5
Thyristor
SMD Type
40
30
TYPICAL EXAMPLE
25 DISTRIBUTION
20
15
10
5
0
0
20
40
60
80 100 120 140 160
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7
5
3
2
Tj = 25°C
TYPICAL EXAMPLE
IGT (DC)
# 1 10µA
#1
# 2 65µA
#2
103
7
5
3
2
102
7
5
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
6
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REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
320
THERMAL IMPEDANCE (°C/W)
TURN-OFF TIME (µs)
VD = 50V, VR = 50V
35 IT = 2A, RGK = 1kΩ
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
100 (%)
CR08AS
THERMAL IMPEDANCE VS.
BOARD DIMENSIONS
280
240
200
WITHOUT EPOXY PLATE
160
120
80
t0.7
40 10×10 EPOXY PLATE ALUMINUM
WITH COPPER FOIL BOARD
0
0 10 20 30 40 50 60 70 80
BOARD DIMENSIONS (mm)
REGULAR SQUARE ONE SIDE
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