UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS(on) = 0.03Ω @VGS = 10 V Low gate charge ( typical 56 nC) Low Crss ( typical 96pF) Fast switching Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP79N15 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt PD Power Dissipation FDPF79N15 150 (Note 1) Unit V 79 50 79* 50* A A 316 316* A ± 30 V (Note 2) 1669 mJ (Note 1) 79 A Repetitive Avalanche Energy (Note 1) 46.3 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns (TC = 25°C) - Derate above 25°C 463 3.7 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 31 0.25 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP79N15 FDPF79N15 Unit RθJC Thermal Resistance, Junction-to-Case 0.27 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP79N15 / FDPF79N15 Rev. A 1 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET May 2006 Device Marking Device Package Reel Size Tape Width Quantity FDP79N15 FDP79N15 TO-220 - - 50 FDPF79N15 FDPF79N15 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 150 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.15 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 39.5A -- 0.025 0.03 Ω gFS Forward Transconductance VDS = 40V, ID = 39.5A -- 46 -- S -- 2620 3410 pF -- 730 950 pF -- 96 140 pF -- 50 112 ns -- 200 410 ns -- 55 120 ns -- 38 85 ns -- 56 73 nC -- 18 -- nC -- 21 -- nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 75V, ID = 79A RG = 25Ω (Note 4, 5) VDS = 120V, ID = 79A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 79 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 316 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 79A -- -- 1.4 V trr Reverse Recovery Time 136 -- ns Reverse Recovery Charge VGS = 0V, IS = 79A dIF/dt =100A/μs -- Qrr -- 2.1 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.357mH, IAS = 79A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 79A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP79N15 / FDPF79N15 Rev. A 2 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 ∝ Notes : 1. 250レs Pulse Test 2. TC = 25∩ 1 10 o -55 C ∝ Notes : 1. VDS = 40V 2. 250レs Pulse Test 0 10 -1 10 o 150 C o 25 C 0 0 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.06 0.05 IDR, Reverse Drain Current [A] RDS(ON) [ヘ ],Drain-Source On-Resistance 0.07 VGS = 10V 0.04 VGS = 20V 0.03 ∝ Note : TJ = 25∩ 0.02 2 10 150∩ 1 10 ∝ Notes : 1. VGS = 0V 2. 250レs Pulse Test 0 0 25 50 75 100 125 150 175 10 200 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 5000 Coss 4000 Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] Capacitances [pF] 25∩ 3000 ∝ Note ; 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 1000 VDS = 30V 10 VDS = 75V VDS = 120V 8 6 4 2 ∝ Note : ID = 79A 0 -1 10 0 0 10 1 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDP79N15 / FDPF79N15 Rev. A 0 3 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ∝ Notes : 1. VGS = 0 V 2. ID = 250 レA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ∝ Notes : 1. VGS = 10 V 2. ID = 34.5 A 0.5 0.0 -100 200 o -50 0 50 100 150 TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FDP79N15 Figure 9-2. Maximum Safe Operating Area for FDPF79N15 3 10 3 10 10 μs 10 μs 100 μs 2 10 10 1ms 10ms 1 10 100ms DC Operation in This Area is Limited by R DS(on) 0 10 100 μs 2 ID, Drain Current [A] ID, Drain Current [A] 200 o TJ, Junction Temperature [ C] * Notes : o 1. TC = 25 C 1ms 10ms 100ms 1 10 DC Operation in This Area is Limited by R DS(on) 0 10 * Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -1 10 -1 0 1 10 10 2 10 10 0 10 VDS, Drain-SourceVoltage[V] 1 10 2 10 VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 90 80 ID, Drain Current [A] 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature [∩ ] FDP79N15 / FDPF79N15 Rev. A 4 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP79N15 / FDPF79N15 150V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FDP79N15 0 Z? JC(t), Thermal Response 10 D=0.5 -1 10 0.2 PDM 0.1 t1 t2 * Notes : 0 1. ZθJC(t) = 0.27 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.05 0.02 0.01 -2 10 single pulse -5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF79N15 0 10 Z? JC(t), Thermal Response D=0.5 0.2 -1 10 0.1 0.05 PDM t1 t2 * Notes : 0 1. ZθJC(t) = 0.67 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FDP79N15 / FDPF79N15 Rev. A 5 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. A 6 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP79N15 / FDPF79N15 Rev. A 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. A 8 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP79N15 / FDPF79N15 Rev. A 9 www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 10 FDP79N15 / FDPF79N15 Rev. A www.fairchildsemi.com FDP79N15 / FDPF79N15 150V N-Channel MOSFET TRADEMARKS