MOSFET SMD Type P-Channel MOSFET AO4443-HF (KO4443-HF) SOP-8 ■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON) ＜ 42mΩ (VGS =-10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 63mΩ (VGS =-4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -6.5 -5 A -20 3.1 2 W 40 75 RthJL 30 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4443-HF (KO4443-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=-250μA, VGS=0V Min Typ -40 -1 VDS=-32V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±20V VDS=VGS, ID=-250uA RDS(On) VGS=-10V, ID=-6A -1 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=-10V, VDS=-5V VDS=-5V, ID=-6A 14 VGS=0V, VDS=0V, f=1MHz 6.5 VGS=-10V, VDS=-20V, ID=-6A 7.1 VGS=-10V, VDS=-20V, RL=3.7Ω, RGEN=3Ω tf Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD 8 Marking 2 4443 KC**** F www.kexin.com.cn ns 26.5 11.5 IF=-6A, dI/dt=100A/us 21.9 14.9 IS=-1A,VGS=0V Note :The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. ■ Marking nC 2.2 7.7 trr Ω 14.2 td(on) Qrr pF 63 Turn-On DelayTime Body Diode Reverse Recovery Charge S 143 4.1 Body Diode Reverse Recovery Time mΩ 657 VGS=0V, VDS=-20V, f=1MHz Qgd Turn-Off Fall Time V A Gate Drain Charge tr -3 63 Qgs td(off) nA -20 Gate Source Charge Turn-Off DelayTime ±100 68 TJ=125℃ Qg Turn-On Rise Time uA 42 VGS=-4.5V, ID=-5A On state drain current Unit V VDS=-32V, VGS=0V VGS=-10V, ID=-6A Static Drain-Source On-Resistance Max nC -6 A -1 V MOSFET SMD Type P-Channel MOSFET AO4443-HF (KO4443-HF) ■ Typical Characterisitics -10V 25 -5.0V -4.5V 25 -ID (A) -4.0V -6.0V 20 VDS=-5V 20 15 -ID(A) 30 -3.5V 15 10 125°C 10 VGS=-3.0V 25°C 5 5 0 0 0 1 2 3 4 1 5 1.5 60 3 3.5 4 4.5 5 1.8 Normalized On-Resistance 55 50 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 45 40 35 VGS=-10V 30 25 20 0 2 4 6 8 1.6 VGS=-10V ID=-6A 1.4 VGS=-4.5V ID=-5A 1.2 1 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 140 ID=-6A 120 1.0E+00 100 1.0E-01 125°C 1.0E-02 80 -IS (A) RDS(ON) (mΩ) 2 125°C 1.0E-03 60 1.0E-04 25°C 40 25°C 1.0E-05 20 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4443-HF (KO4443-HF) ■ Typical Characterisitics 10 1000 VDS=-40V ID=-6A 800 Capacitance (pF) -VGS (Volts) 8 Ciss 6 4 600 400 Coss Crss 200 2 0 0 0 3 6 9 12 0 15 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 40 TJ(Max)=150°C, TA=25°C RDS(ON) limited 10.0 1ms 10ms 1.0 0.1s 1s 10s 0 0.001 10 100 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 20 DC 1 10 40 10 0.1 0.1 30 TJ(Max)=150°C TA=25°C 30 10µs 100µs Power (W) -ID (Amps) 100.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics www.kexin.com.cn 100 1000