Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTP4435BV8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit BVDSS ID@ VGS=-10V, TA=25°C -30V -10.5A ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-10A -32.4A 12.6mΩ(typ.) RDSON@VGS=-5V, ID=-7A 16.9mΩ(typ.) Outline MTP4435BV8 DFN3×3 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTP4435BV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=-12A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -30 ±25 -32.4 -20.5 -10.5 -8.4 -80 *1 -12 72 *4 2.5 *2 29 12 3.1 *3 1.9 *3 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 4.2 40 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. 4. 100% tested by conditions of L=0.5mH, IAS=-10A, VGS=-10V, VDS=-15V Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTP4435BV8 Min. Typ. Max. -30 -1 - 12.6 16.9 19 -2.5 ±100 -1 -10 15.5 23 - - 1453 183 154 - Unit Test Conditions S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±25V, VDS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, Tj=125°C VGS=-10V, ID=-10A VGS=-5V, ID=-7A VDS=-5V, ID=-10A pF VDS=-15V, VGS=0V, f=1MHz V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 10.6 18.2 81.4 35.4 31.7 15.9 4.7 5.4 7 Max. - - -0.79 12.6 6.4 -3 -12 -1.2 - Unit Test Conditions ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-15V, ID=-4.6A, VGS=-10V, Ω f=1MHz A V ns nC IS=-3A, VGS=0V IF=-2.1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage 80 -I D, Drain Current (A) -10V, -9V, -8V, -7V,-6V 60 -5V 40 -4V 20 -3.5V VGS=-3V 1 1 0.8 0.6 ID=-250μA, VGS=0V 0.4 0 0 1.2 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=0V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS= -4V -5V -10V 100 10 Tj=25°C 1 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 -ID, Drain Current(A) 0 10 R DS(on) , Normalized Static Drain-Source On-State Resistance 200 180 4 8 12 16 -IS, Source Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-10A 160 140 120 100 80 60 40 20 2 1.8 VGS=-10V, ID=-10A 1.6 1.4 1.2 1 0.8 RDS(ON) @Tj=25°C : 12.6 mΩ typ. 0.6 0.4 0 0 MTP4435BV8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , normliz Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA Crss 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 100 10 1 VDS=-10V Pulsed TA=25°C 0.1 0.01 0.001 8 VDS=-10V 6 4 VDS=-15V 2 ID=-4.6A 0 0.01 0.1 1 -ID, Drain Current(A) 10 100 0 8 16 24 32 Qg, Total Gate Charge(nC) 40 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 14 100μs 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 12 10 8 6 4 TA=25°C, VGS=-10V, RθJA=40°C/W 2 0 0.01 0.01 MTP4435BV8 0.1 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 80 TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 VDS=-10V 70 -I D, Drain Current (A) Peak Transient Power (W) 300 200 150 100 50 60 50 40 30 20 10 0 0.0001 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 1000 0 2 4 6 -VGS, Gate-Source Voltage(V) 8 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 9/9 DFN3×3 Dimension Marking: D D D D 4435B Date Code S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 *: Typical Millimeters Min. Max. 0.605 0.850 0.152 REF 0.000 0.050 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4435BV8 CYStek Product Specification