PHOTOTRANSISTOR Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 H11A1 50 H11A2 20 H11A3 20 H11A4 10 H11A5 30 Dimensions in Inches (mm) Part No. MCT2 MCT2E MCT270 MCT271 MCT272 MCT273 MCT274 MCT275 MCT276 MCT277 CTR % Min. 20 20 50 45–90 75–150 125–250 225–400 70–90 15–60 100 FEATURES • Interfaces with Common Logic Families • Input-output Coupling Capacitance < 0.5 pF • Industry Standard Dual-in-line 6-pin Package • Field Effect Stable by TRIOS® • 5300 VRMS Isolation Test Voltage • Underwriters Laboratory File #E52744 • V VDE #0884 Approval Available with Option 1 D E APPLICATIONS • AC Mains Detection • Reed Relay Driving • Switch Mode Power Supply Feedback • Telephone Ring Detection • Logic Ground Isolation • Logic Coupling with High Frequency Noise Rejection Notes: Designing with data sheet is covered in Application Note 45. 3 2 1 pin one ID 6 Base Anode 1 .248 (6.30) .256 (6.50) 5 Collector Cathode 2 4 5 6 4 Emitter NC 3 .335 (8.50) .343 (8.70) .039 (1.00) Min. 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18° .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3°–9° .114 (2.90) .130 (3.0) .010 (.25) typ. .300–.347 (7.62–8.81) DESCRIPTION This data sheet presents five families of Infineon Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS Isolation Test Voltage. This isolation performance is accomplished through Infineon double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1. Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)® on the phototransistor substrate. These isolation processes and the Infineon IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers. 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–53 March 27, 2000-00 Maximum Ratings TA=25°C Emitter Reverse Voltage .......................................................................................... 6.0 V Forward Current ........................................................................................ 60 mA Surge Current (t≤10 µs)............................................................................... 2.5 A Power Dissipation................................................................................... 100 mW Detector Collector-Emitter Breakdown Voltage........................................................... 70 V Emitter-Base Breakdown Voltage ................................................................ 7.0 V Collector Current ....................................................................................... 50 mA Collector Current(t <1.0 ms).................................................................... 100 mA Power Dissipation................................................................................... 150 mW Package Isolation Test Voltage.......................................................................... 5300 VRMS Creepage .............................................................................................. ≥7.0 mm Clearance ............................................................................................. ≥7.0 mm Isolation Thickness between Emitter and Detector ............................... ≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175 Isolation Resistance VIO=500 V, TA=25°C...............................................................................1012 Ω VIO=500 V, TA=100°C............................................................................ 1011 Ω Storage Temperature................................................................ –55°C to +150°C Operating Temperature ............................................................ –55°C to +100°C Junction Temperature................................................................................ 100°C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane ≥1.5 mm) ...................................................... 260°C 4N25/26/27/28—Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage* VF — 1.3 1.5 V IF=50 mA Reverse Current* IR — 0.1 100 µA VR=3.0 V Capacitance CO — 25 — pF VR=0 Collector-Emitter BVCEO 30 — — V IC=1.0 mA Emitter-Collector BVECO 7.0 — — IE=100 µA Collector-Base BVCBO 70 — — IC=100 µA 4N25/26/27 4N28 — — 5.0 10 50 100 nA VCE=10 V, (base open) ICBO(dark)* — — 2.0 20 nA VCB=10 V, (emitter open) Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 CTR 20 50 — % VCE=10 V, IF=10 mA 10 30 — 2500 — — V Peak, 60 Hz 4N26/27 1500 — — 4N28 500 — — Detector Breakdown Voltage* ICEO(dark)* Package DC Current Transfer Ratio* 4N25/26 4N27/28 Isolation Voltage* 4N25 VIO Saturation Voltage, Collector-Emitter VCE(sat) — — 0.5 V ICE=2.0 mA, IF=50 mA Resistance, Input to Output* RIO 100 — — GΩ VIO=500 V Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz Rise and Fall Times tr, tf — 2.0 — µs IF=10 mA VCE=10 V, RL=100 Ω * Indicates JEDEC registered values 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) Phototransistor, Industry Standard 2–54 March 27, 2000-00 4N35/36/37/38—Characteristics TA=25°C Emitter Symbol Forward Voltage* VF Min. Typ. Max. Unit Condition 1.3 1.5 1.7 V IF=10 mA IF=10 mA, TA=–55°C 0.9 Reverse Current* IR 0.1 10 µA VR=6.0 V Capacitance CO 25 — pF VR=0, f=1.0 MHz V IC=1.0 mA Detector Breakdown Voltage, Collector-Emitter* 4N35/36/37 BVCEO 30 — — 80 — — BVECO 7.0 — — V IE=100 µA BVCBO 70 — — V IC=100 µA, IB=1.0 µA 80 — — — ICEO — 5.0 50 nA — — 50 ICEO — — 500 — 6.0 — CCE — 6.0 CTR 100 4N38 Breakdown Voltage, Emitter-Collector* Breakdown Voltage, Collector-Base* 4N35/36/37 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 4N38 Leakage Current, Collector-Emitter* 4N35/36/37 4N38 Capacitance, Collector-Emitter VCE=10 V, IF=0 VCE=60 V, IF=0 µA VCE=30 V, IF=0, TA=100°C — pF VCE=0 — — % VCE=10 V, IF=10 mA, VCE=60 V, IF=0, TA=100°C Package DC Current Transfer Ratio* 4N35/36/37 20 — — DC Current Transfer Ratio* 4N35/36/37 CTR 40 50 — % 4N38 — — 30 — — VCE=10 V, IF=10 mA, TA=–55 to 100°C — — Ω VIO=500 V 4N38 Resistance, Input to Output* 11 VCE=1.0 V, IF=20 mA RIO 10 Coupling Capacitance CIO — 0.5 — pF f=1.0 MHz Switching Time* tON, tOFF — 10 — µs IC=2.0 mA, RL=100 Ω, VCC=10 V Symbol Min. Typ. Max. Unit Condition VF — 1.1 1.5 V IF=10 mA — 1.1 1.7 * Indicates JEDEC registered value H11A1 through H11A5—Characteristics TA=25°C Emitter Forward Voltage H11A1–H11A4 H11A5 Reverse Current IR — — 10 µA VR=3.0 V Capacitance C0 — 50 — pF VR=0, f=1.0 MHz Breakdown Voltage, Collector-Emitter BVCEO 30 — — V IC=1.0 mA, IF=0 mA Breakdown Voltage, Emitter-Collector BVECO 7.0 — — V IE=100 µA, IF=0 mA Detector Breakdown Voltage, Collector-Base BVCBO 70 — — V IC=10 µA, IF=0 mA Leakage Current, Collector-Emitter ICEO — 5.0 50 nA VCE=10 V, IF=0 mA Capacitance, Collector-Emitter CCE — 6.0 — pF VCE=0 CTR % VCE=10 V, IF=10 mA Package DC Current Transfer Ratio H11A1 50 — — H11A2/3 20 — — H11A4 10 — — H11A5 30 — — Saturation Voltage, Collector-Emitter VCEsat — — 0.4 V ICE=0.5 mA, IF=10 mA Capacitance, Input to Output CIO — 0.5 — pF — Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) Phototransistor, Industry Standard 2–55 March 27, 2000-00 MCT2/MCT2E—Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF — 1.1 1.5 V IF=20 mA Reverse Current IR — — 10 µA VR=3.0 V Capacitance CO — 25 — pF VR=0, f=1.0 MHz Collector-Emitter BVCEO 30 — — V Emitter-Collector BVECO 7.0 — — IE=100 µA, IF=0 mA Collector-Base BVCBO 70 — — IC=10 µA, IF=0 mA Collector-Emitter ICBO — 5.0 50 nA Collector-Base ICBO — — 20 — — CCE — 10 — pF VCE=0 CTR 20 60 — % VCE=10 V, IF=10 mA Detector Breakdown Voltage Leakage Current Capacitance, Collector-Emitter IC=1.0 mA, IF=0 mA VCE=10 V, IF=0 Package DC Current Transfer Ratio Capacitance, Input to Output CI O — 0.5 — pF — Resistance, Input to Output RIO — 100 — GΩ — Switching Time tON, tOFF — 3.0 — µs IC=2.0 mA, RL=100 Ω, VCE=10 V MCT270 through MCT277—Characteristics TA=25°C Emitter Symbol Min. Typ. Max. Unit Condition Forward Voltage VF — — 1.5 V IF=20 mA Reverse Current IR — — 10 µA VR=3.0 V Capacitance CO — 25 — pF VR=0, f=1.0 MHz Collector-Emitter BVCEO 30 — — V IC=10 µA, IF=0 mA Emitter-Collector BVECO 7.0 — — Collector-Base BVCBO 70 — — — IC=10 µA, IF=0 mA ICEO — — 50 nA VCE=10 V, IF=0 mA CTR 50 — — % VCE=10 V, IF=10 mA VCE=0.4 V, IF=16 mA Detector Breakdown Voltage Leakage Current, Collector-Emitter IE=10 µA, IF=0 mA Package DC Current Transfer Ratio MCT270 MCT271 45 — 90 MCT272 75 — 150 MCT273 125 — 250 MCT274 225 — 400 MCT275 70 — 210 MCT276 15 — 60 MCT277 100 — — CTRCE 12.5 — — % 40 — — — Collector–Emitter Saturation Voltage VCEsat — — 0.4 V ICE=2.0 mA, IF=16 mA Capacitance, Input to Output CIO — 0.5 — pF — RIO — 1012 — Ω VIO=500 VDC tON, tOFF µs IC=2.0 mA, RL=100 Ω, VCE=5.0 V Current Transfer Ratio, Collector–Emitter MCT271–276 MCT277 Resistance, Input to Output Switching Time MCT270/272 — — 10 MCT271 — — 7.0 MCT273 — — 20 MCT274 — — 25 MCT275/277 — — 15 MCT276 — — 3.5 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) Phototransistor, Industry Standard 2–56 March 27, 2000-00 Figure 1. Forward Voltage vs. Forward Current Figure 4. Normalized Non-saturated and Saturated CTR, TA=70°C vs. LED Current 1.5 1.3 NCTR - Normalized CTR VF - Forward Voltage - V 1.4 TA = –55°C 1.2 TA = 25°C 1.1 1.0 0.9 TA = 85°C 0.8 1.0 TA=70°C 0.5 NCTR(SAT) NCTR 0.0 0.7 .1 1 10 IF - Forward Current - mA .1 100 Figure 2. Normalized Non-saturated and Saturated CTR, TA=25°C vs. LED Current 1 10 IF - LED Current - mA 1.5 NCTR - Normalized CTR Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=25°C 0.5 NCTR(SAT) Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce = 0.4 V 1.0 TA=85°C 0.5 NCTR(SAT) NCTR NCTR 0.0 0.0 0 1 10 IF - LED Current - mA .1 100 Figure 3. Normalized Non-saturated and Saturated CTR, TA=50°C vs. LED Current 1 10 IF - LED Current - mA 100 Figure 6. Collector-emitter Current vs. Temperature and LED Current 35 1.5 Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V Ice - Collector Current - mA NCTR - Normalized CTR 100 Figure 5. Normalized Non-saturated and Saturated CTR, TA=85°C vs. LED Current 1.5 NCTR - Normlized CTR Normalized to: Vce=10 V, IF=10 mA, TA=25°C CTRce(sat) Vce=0.4 V 1.0 TA=50°C 0.5 NCTR(SAT) NCTR 30 25 50°C 20 70°C 15 25°C 85°C 10 5 0 0.0 .1 1 10 IF - LED Current - mA 0 100 10 20 30 40 50 60 IF - LED Current - mA 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) Phototransistor, Industry Standard 2–57 March 27, 2000-00 Figure 7. Collector-emitter Leakage Current vs. Temp. 10 10 10 1.2 4 3 2 Vce = 10 V 1 Typical 10 0 10 –1 10 –2 –20 0 20 40 60 80 70°C 50°C 1.0 25°C –20°C 0.8 Normalized to: Ib=20 µA, Vce=10 V, TA=25°C 0.6 0.4 100 1 10 100 Ib - Base Current - µA TA - Ambient Temperature - °C Figure 11. Normalized HFE vs. Base Current and Temp. 1.5 1.5 Normalized to: Vcb=9.3 V, IF=10 mA, TA=25°C NHFE(sat) - Normalized Saturated HFE NCTRcb - Normalized CTRcb Figure 8. Normalized CTRcb vs. LED Current and Temp. 1.0 0.5 25°C 50°C 70°C 50°C 70°C 1.0 25°C –20°C 0.5 Vce=0.4 V 1 10 1 100 10 1 0.1 Nib, TA=–20°C Nib, TA=25°C Nib, TA= 50°C Nib, TA=70°C 10 tPLH - Propagation Delay - µs Normalized to: IF=10 mA, TA=25°C 1 1000 Figure 12. Propagation Delay vs. Collector Load Resistor 1000 2.5 Figure 9. Normalized Photocurrent vs. IF and Temp. 10 0.01 .1 100 Ib - Base Current - µA IF - LED Current - mA IF=10 mA, TA=25°C VCC=5.0 V, Vth=1.5 V 100 tPHL 2.0 10 1.5 tPLH 1 .1 100 IF - LED Current - mA 1 1.0 100 10 RL - Collector Load Resistor - kΩ Figure 14. Switching Schematic Figure 13. Switching Timing IF VCC = 5.0 V F=10 KHz, DF=50% tD VO Normalized to: Vce=10 V, Ib=20 µA TA=25°C 0.0 0.0 .1 Normalized Photocurrent 1000 tPHL - Propagation Delay - µs 10 Figure 10. Normalized Non-saturated HFE vs. Base Current and Temperature NHFE - Normalized HFE Iceo - Collector-Emitter - nA 10 5 tR VO tPLH IF =10 mA VTH=1.5 V tPHL RL tS tF 2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) Phototransistor, Industry Standard 2–58 March 27, 2000-00