VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 6 A I DM TC = 25°C, pulse width limited by TJM 24 A PD TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G G = Gate, S = Source, D = Drain, TAB = Drain °C 300 Features ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications ● VDSS VGS = 0 V, ID = 3 mA VGS(th) V DS = VGS, ID = 250 µA I GSS VGS = ±20 VDC, VDS = 0 I DSS V DS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 800 2 TJ = 25°C TJ = 125°C 6N80 6N80A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.5 V ±100 nA 250 1 µA mA 1.8 1.4 Ω Ω ● ● ● IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages ● ● ● IXYS reserves the right to change limits, test conditions, and dimensions. International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 91542E(5/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 6N80 IXTM 6N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 • ID25, pulse test Ciss 6 S 2800 pF 250 pF Crss 100 pF td(on) 35 100 ns 40 110 ns 100 200 ns 60 100 ns 110 130 nC 15 30 nC 50 70 nC Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω, (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 0.7 0.25 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V I SM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 900 6 A 24 A 1.5 V IXTH 6N80A IXTM 6N80A TO-247 AD (IXTH) Outline 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-204AA (IXTM) Outline ns Pins 1 - Gate 2 - Source Case - Drain Dim. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Millimeter Min. Max. A 6.4 11.4 A1 3.42 ∅b .97 1.09 ∅D 22.22 e 10.67 11.17 e1 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L 7.93 ∅p 3.84 4.19 ∅p1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 IXTH 6N80 IXTM 6N80 Fig. 1 Output Characteristics Fig. 2 Input Admittance 9 8 TJ = 25°C 7 ID - Amperes 7 ID - Amperes 9 7V V GS = 10V 8 6 5 4 3 6V 2 6 5 TJ = 25°C 4 3 2 1 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 0 5 10 15 20 25 30 VGS - Volts VDS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 3.0 2.50 T J = 25°C 2.25 RDS(on) - Normalized 2.8 RDS(on) - Ohms IXTH 6N80A IXTM6N80A 2.6 2.4 V GS = 10V 2.2 VGS = 15V 2.0 2.00 1.75 1.50 ID = 2.5A 1.25 1.00 0.75 1.8 0 2 4 6 8 0.50 -50 10 -25 0 ID - Amperes 25 50 75 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 7 1.2 6 1.1 6N80A 5 6N80 3 2 1 VGS(th) 1.0 0.9 0.8 0.7 0.6 0 -50 BV/VG(th) - Normalized ID - Amperes BV CES 4 100 125 150 -25 0 25 50 75 100 125 150 TC - Degrees C 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXTH 6N80 IXTM 6N80 Fig.7 Gate Charge Characteristic Curve IXTH 6N80A IXTM6N80A Fig.8 Forward Bias Safe Operating Area 10 10us 9 V DS = 500V ID = 3.0A IG = 10mA 8 10 Limited by R DS(on) ID - Amperes VGE - Volts 7 6 5 4 3 100us 1ms 1 10ms 100ms 2 1 0 0.1 0 10 20 30 40 50 60 70 80 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 9 Ciss 8 7 ID - Amperes Capacitance - pF Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 1000 f = 1 MHz VDS = 25V 6 5 4 TJ = 125°C 3 T J = 25°C 2 Coss 1 Crss 0 5 10 0 15 20 25 0.0 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 Time - Seconds IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 0.1 1 10