SUNMATE HER507G Glass passivated ultrafast diode Datasheet

HER501G - HER508G
GLASS PASSIVATED ULTRAFAST DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
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Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
B
A
A
C
D
Mechanical Data
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Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
DO-201AD
Dim
Min
A
25.40
Max
—
B
8.50
9.53
C
0.96
1.06
D
4.80
5.21
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Symbol
Characteristic
HER
501G
50
HER
502G
100
HER
503G
200
HER
504G
300
HER
505G
400
HER
506G
600
HER
507G
800
HER
508G
1000
Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
V
IF(AV)
5.0
A
IFSM
200
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 5.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
VF
1.1
1.7
IR
10
IR(H)
50
Maximum Reverse Recovery Time ( Note 1 )
Trr
Typical Junction Capacitance ( Note 2 )
CJ
V
µA
µA
50
75
50
ns
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
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RATING AND CHARACTERISTIC CURVES ( HER501G - HER508 G)
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
5
4
3
2
1
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
160
120
80
40
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
2
AMBIENT TEMPERATURE, ( °C)
10
20
40
60 100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
100
FORWARD CURRENT, AMPERES
6
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
10
HER501G-HER505G
HER506G-HER508G
1.0
4
0.1
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
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