MMBT3906 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * As complementary type,the NPN transistor MMBT3904 is Recommended * Epitaxial planar die construction SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 0.047(1.20) 2 EMITTER 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted ) RATINGS SYMBOL VALUE UNITS O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1.Alumina=0.4*0.3*0.024in.99.5% alumina. 2."Fully ROHS Compliant", "100% Sn plating(Pb-free)". SYMBOL MIN. TYP. MAX. RqJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (I C = -100uAdc, I E = 0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (I E = -100uAdc, I C = 0) V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) 60 - (I C = -1.0mAdc, V CE = -1.0Vdc) 80 - Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) ON CHARACTERISTICS(1) (I C = -10mAdc, V CE = -1.0Vdc) hFE 100 300 (I C = -50mAdc, V CE = -1.0Vdc) 60 - (I C = -100mAdc, V CE = -1.0Vdc) 30 - - -0.25 - -0.4 -0.65 -0.85 - -0.95 fT 250 - MHz Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz) Cobo - 4.5 pF Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 10 pF Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hie 2.0 12 kW Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hre 0.1 10 X 10 -4 Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz) hfe 100 400 - Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hoe 3.0 60 umhos Noise Figure (V CE = -5.0Vdc, I C = -100uAdc, RS= 1.0kW, f= 1.0kHz) NF - 4.0 dB td - 35 tr - 35 ts - 225 tf - 75 Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -50mAdc, I B = -5.0mAdc) VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc) (V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc) <2.0% Note : Pulse Test: Pulse Width< -300ms,Duty Cycle- ns ns 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) RATING AND CHARACTERISTICS CURVES ( MMBT3906 ) Cibo 3.0 1000 700 500 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 300 200 100 70 50 20 30 40 2.0 3.0 5.0 7.0 10 VCC= 40 V IC/IB= 10 QT 1.0 QA 2.0 3.0 REVERSE BIAS (VOLTS) t f,FALL TIME (ns) TIME (ns) 15 V 30 20 40 V 20 30 50 70 100 IC/IB= 20 100 70 50 30 20 IC/IB= 10 10 2.0 V 7 5 td @ VOB=0V 5.0 7.0 10 VCC= 40 V IB1 = IB2 300 200 tr @ VCC=3.0V 2.0 3.0 200 1.0 2.0 3.0 Figure 3 Turn-On Time f = 1.0 kHz SOURCE RESIST ANCE=200W IC= 0.5 mA SOURCE RESISTANCE=2.0k IC= 50uA 2.0 1.0 0 0.1 SOURCE RESIST ANCE=2.0k IC= 100uA 0.2 0.4 1.0 2.0 50 70 100 IC= 1.0 mA 10 IC= 0.5 mA 8 6 4 IC= 50uA IC= 100uA 2 4.0 10 f, FREQUENCY (kHz) Figure 5 200 12 SOURCE RESIST ANCE=200W IC= 1.0 mA 3.0 20 30 Figure 4 Fall Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 4.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 5.0 200 500 IC/IB= 10 300 200 1.0 50 70 100 Figure 2 Charge Data 500 10 7 5 20 30 IC, COLLECTOR CURRENT (mA) Figure 1 Capacitance 100 70 50 5.0 7.0 10 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 Rg, SOURCE RESIST ANCE (KOHMS) Figure 6 100 RATING AND CHARACTERISTICS CURVES ( MMBT3906 ) 100 hoe, OUTPUT ADMITTANCE (umhos) hfe, DCCURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 70 50 30 20 10 7 5 5.0 7.0 10 0.1 0.2 IC, COLLECTOR CURRENT (mA) hre, VOLTAGE FEEDBACK RATIO(x10-4) 3.0 2.0 1.0 0.7 0.5 0.5 0.7 1.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 Figure 10 Voltage Feedback Ratio VBE(sat)@IC/IB=10 VBE@VCE=1.0V 0.6 0.4 VCE(sat)@IC/IB=10 0.2 2.0 5.0 Figure 9 Input lmpedance 0.8 1.0 7.0 IC, COLLECTOR CURRENT (mA) TJ= 25OC 0 10 IC, COLLECTOR CURRENT (mA) 1.0 V,VOLTAGE (V) 2.0 3.0 5.0 10 20 50 100 200 QV, TEMPERATURE COEFFICIENTS (mV/oC) hie, INPUT IMPEDANCE (KOHMS) 10 7.0 5.0 0.2 0.3 5.0 7.0 10 2.0 3.0 Figure 8 Output Admittance 20 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mA) Figure 7 Current Gain 0.3 0.2 0.3 1.0 0.5 +25OC TO +125OC qVCFOR VCE(sat) 0 -55OC TO +25OC ± 0.5 +25OC TO +125OC ± 1.0 -55OC TO +25OC qVBFOR VBE(sat) ± 1.5 ± 2.0 0 20 40 60 80 100 120 140 160 180 200 IC,COLLECTOR CURRENT(mA) IC, COLLECTOR CURRENT (mA) Figure 11 "ON" Voltages Figure 12 Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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