APTM120A20D Phase leg with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 200mΩ max @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • • • • G1 VBUS 0/VBUS OUT Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits S1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 50 37 200 ±30 200 1250 12 30 1300 Unit V A V mΩ W A July, 2004 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120U20D Rev 0 • • • • S2 APTM120A20D All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V, ID = 1.5mA Min 1200 VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 25A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 600V ID = 50A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Typ 15.2 2.2 0.42 600 Max Unit V 1.5 6 200 5 ±450 mΩ V nA Max Unit mA nF nC 84 390 10 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 50A R G =0.8Ω Rise Time Typ 10 ns 68 36 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8Ω 2.79 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 50A, R G = 0.8Ω 5.6 mJ 0.6 mJ 0.81 X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 2400A IF = 120A IF = 120A VR = 800V di/dt = 400A/µs IF = 120A VR = 800V di/dt = 400A/µs Min 1200 Typ Tj = 125°C 120 2 2.3 1.8 Tj = 25°C 400 Tj = 125°C 470 Tj = 25°C 2.4 Tj = 125°C 8 T c = 70°C APT website – http://www.advancedpower.com Max Unit V A 2.5 V July, 2004 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current ns µC 2–6 APTM120U20D Rev 0 Series diode ratings and characteristics APTM120A20D Thermal and package characteristics Symbol Characteristic Min Transistor Series diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM120U20D Rev 0 July, 2004 Package outline APTM120A20D Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 180 150 7V 120 6.5V 90 6V 60 5.5V 30 ID, Drain Current (A) VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 150 120 90 60 TJ =25°C 30 0 0 0 5 10 15 20 25 30 0 ID, DC Drain Current (A) 1.2 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 60 Normalized to VGS =10V @ 25A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.9 0.8 50 40 30 20 10 0 0 30 60 90 ID, Drain Current (A) 120 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance TJ =-55°C TJ=125°C 5V APT website – http://www.advancedpower.com 4–6 APTM120U20D Rev 0 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=25A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDS on 100µs 100 1ms 10 Single pulse TJ =150°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 I D=50A TJ=25°C 12 10 8 V DS =240V VDS=600V VDS=960V 6 4 2 0 0 120 240 360 480 600 720 840 Gate Charge (nC) July, 2004 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM120U20D Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A20D APTM120A20D Delay Times vs Current Rise and Fall times vs Current 50 t d(off) 60 tf tr and tf (ns) V DS =800V RG =0.8Ω T J=125°C L=100µH 40 20 V DS =800V RG =0.8Ω T J=125°C L=100µH 25 0 0 10 30 50 70 90 110 10 30 I D, Drain Current (A) 110 9 VDS=800V RG=0.8Ω TJ=125°C L=100µH 9 E on Switching Energy (mJ) 6 3 Eoff 0 Eon 6 VDS=800V ID=50A T J=125°C L=100µH 3 Eoff 0 10 30 50 70 90 110 0 1 2 ID, Drain Current (A) Operating Frequency vs Drain Current 200 125 50 25 5 6 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 150 75 4 1000 175 100 3 Gate Resistance (Ohms) VDS=800V D=50% RG=0.8Ω T J=125°C T C=75°C 0 10 20 30 40 ID, Drain Current (A) 50 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2004 Switching Energy (mJ) 50 70 90 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 12 Frequency (kHz) tr t d(on) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM120U20D Rev 0 td(on) and td(off) (ns) 80