Mitsubishi CM600HU-24F Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM600HU-24F
HIGH POWER SWITCHING USE
CM600HU-24F
¡IC ................................................................... 600A
¡VCES ......................................................... 1200V
¡Insulated Type
¡1-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
110
93 ±0.25
23.6
E
E
10.7
6.5
6.5
17.5
G
2–M8NUTS
21.5
26.8
29
C
62 ±0.25
80
24.5
15.4
13.5
10.7 9.5
2–M4NUTS
14.5 5.5
Dimensions in mm
CM
9
18
4–φ6.5MOUNTING HOLES
Tc measured point
6.5
23
4
6
23
34
LABEL
+1
-0.5
26 +1
-0.5
E
E
G
C
RTC
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM600HU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1200
±20
600
1200
600
1200
1900
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
G(E) Terminal M4 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
N•m
g
600
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
2
Unit
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 60mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
—
1.8
1.9
—
—
—
6600
—
—
—
—
—
43.2
—
—
—
0.015
—
—
80
2.4
—
230
10
6.0
—
300
150
800
300
500
—
3.2
0.063
0.075
—
0.032*3
µA
ICES
VCE(sat)
Collector-emitter saturation voltage
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Total gate charge
QG
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
trr (Note 1) Reverse recovery time
Qrr (Note 1) Reverse recovery charge
VEC(Note 1) Emitter-collector voltage
Rth(j-c)Q
Thermal resistance*1
Rth(j-c)R
Contact thermal resistance
Rth(c-f)
Thermal resistance
Rth(j-c’)Q
RG
Tj = 25°C
Tj = 125°C
IC = 600A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A
VGE = ±15V
RG = 1.0Ω, Inductive load
IE = 600A
IE = 600A, VGE = 0V
IGBT part
FWDi part
Case to heat sink, Thermal compound applied*2
Case temperature measured point is just under the chips
External gate resistance
10
mA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM600HU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
1000
9
10
600
8.5
400
8
200
0
0.5
1
1.5
2
2.5
3
3.5
4
VGE = 15V
Tj = 25°C
Tj = 125°C
2.5
2
1.5
1
0.5
0
0
400
800
1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
104
Tj = 25°C
7
5
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
15
11
800
0
CAPACITANCE Cies, Coes, Cres (nF)
9.5
Tj = 25°C
VGE = 20V
4
3
IC = 1200A
IC = 600A
2
IC = 240A
1
0
6
8
10
12
14
16
18
103
7
5
3
2
102
7
5
3
2
1
1.5
2
2.5
3
3.5
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
Cies
102
7
5
3
2
101
3
2
0.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
7
5
7
5
0
GATE-EMITTER VOLTAGE VGE (V)
103
3
2
Tj = 25°C
3
2
101
20
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Coes
Cres
VGE = 0V
100 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
102
7
5
3
2
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive load
101
7
5
3
2
100 1
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
td(off)
tf
td(on)
2
3
5 7 102
2
3
5 7 103
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM600HU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
103
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
2
Irr
102
trr
7
5
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive load
3
2
101 1
10
2
5 7 102
3
2
3
5 7 103
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.07K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.075K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 600A
18
16
14
VCC = 400V
12
VCC = 600V
10
8
6
4
2
0
0
2000
4000
6000
8000
10000
GATE CHARGE QG (nC)
Feb. 2009
4
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