AOA400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOA400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AOA400A400 is Pbfree (meets ROHS & Sony 259 specifications). AOA400L is a Green Product ordering option. AOA400 and AOA400L are electrically identical. VDS (V) = 30V ID = 2.8 A (VGS = 10V) RDS(ON) < 85mΩ (VGS = 10V) RDS(ON) < 100mΩ (VGS = 4.5V) RDS(ON) < 140mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 10 1.1 W 0.73 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 2.8 TA=25°C Power Dissipation A Maximum 30 RθJA RθJL Typ 82 115 55 Max 110 150 80 Units °C/W °C/W °C/W AOA400 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=250µA, VGS=0V 30 0.6 gFS VSD IS Static Drain-Source On-Resistance Units 1 5 µA 100 nA 1 1.5 V 59 90 85 130 mΩ 68 100 mΩ 102 8 0.8 140 mΩ 1 S V 1.5 A TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V Max V VDS=24V, VGS=0V 10 VGS=10V, ID=2.8A RDS(ON) Typ TJ=125°C VGS=4.5V, ID=2.5A VGS=2.5V, ID=2A Forward Transconductance VDS=5V, ID=2.8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz 390 54.5 41 pF pF pF VGS=0V, VDS=0V, f=1MHz 8 Ω SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=4.5V, VDS=15V, ID=2.8A 4.2 0.56 1.4 nC nC nC 2.9 1.8 23 3.4 10 2.6 ns ns ns ns tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=5.6Ω, RGEN=6Ω IF=2.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2.8A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOA400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V 3V 12 8 6 ID(A) 9 ID (A) VDS=5V 4.5V 2.5V 6 4 125°C 3 2 VGS=2V 25°C 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 150 1.8 Normalized On-Resistance VGS=2.5V 125 RDS(ON) (mΩ) 1 VGS=4.5V 100 75 VGS=10V 50 25 ID=2A 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0.8 0 2 4 6 8 10 0 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 ID=2A 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 150 100 125°C 1.0E-02 25°C 1.0E-03 25°C 50 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOA400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=2.8A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 100.0 20 25 30 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 15 10.0 RDS(ON) limited 1ms 100µs Power (W) ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 10µs 0.1s 10ms 1.0 10 1s 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000