IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS(on),max (SMD version) • Automotive AEC Q101 qualified ID 24.8 25 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 1C (HBM) EIA/JESD22-A114-B Type Package Ordering Code Marking IPB25N06S3-25 PG-TO263-3-2 SP0000-88000 3N0625 IPI25N06S3-25 PG-TO262-3-1 SP0000-87997 3N0625 IPP25N06S3-25 PG-TO220-3-1 SP0000-88001 3N0625 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 25 Unit A 23 Pulsed drain current2) I D,pulse T C=25 °C 100 Avalanche energy, single pulse3) E AS I D=12 A 60 mJ Drain gate voltage2) V DG 55 V Gate source voltage4) V GS ±20 V Power dissipation P tot 48 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 3.3 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - - 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=15 A - 21.6 25.1 mΩ V GS=10 V, I D=15 A, SMD version - 21.3 24.8 Rev. 1.0 page 2 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Values Conditions Unit min. typ. max. - 1862 - - 283 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 270 - Turn-on delay time t d(on) - 15 - Rise time tr - 27 - Turn-off delay time t d(off) - 16 - Fall time tf - 27 - Gate to source charge Q gs - 14 - Gate to drain charge Q gd - 6 - Gate charge total Qg - 27 41 Gate plateau voltage V plateau - 7.0 - V - - 25 A - - 100 1.3 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=25 A, R G=14.8 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=25 A, V GS=0 to 10 V nC Reverse Diode2) Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=25 A, T j=25 °C 0.6 0.9 Reverse recovery time t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 38 ns Reverse recovery charge Q rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 30 nC T C=25 °C V 1) Current is limited by bondwire; with an R thJC = 3.3 K/W the chip is able to carry 30 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 60 30 50 25 40 20 I D [A] P tot [W] 1 Power dissipation 30 15 20 10 10 5 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 0.1 1 µs limited by on-state resistance Z thJC [K/W] 100 I D [A] 10 µs 100 µs 1 ms 0.05 -1 10 0.01 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 100 55 5.5 V 6V 10 V 80 45 7V I D [A] R DS(on) [mΩ] 60 8V 40 35 8V 25 7V 20 10 V 6V 5V 0 15 0 2 4 6 8 0 10 V DS [V] 20 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 25 A; V GS = 10 V parameter: T j 60 45 40 50 R DS(on) [mΩ] I D [A] 35 -55 °C 40 25 °C 30 175 °C 30 25 20 20 10 15 0 0 1 2 3 4 5 6 7 8 V GS [V] Rev. 1.0 10 -60 -20 20 60 100 140 180 T j [°C] page 5 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 V GS(th) [V] C [pF] 200µA 3 Ciss 20µA 103 2.5 Coss 2 Crss 1.5 102 1 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 12 Typ. avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 I AV [A] 102 I F [A] 30 V DS [V] 11 Typical forward diode characteristicis 101 175 °C 10 25°C 100°C 25 °C 150°C 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 25 1 10 100 1000 t AV [µs] page 6 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 13 Typical avalanche energy 14 Typ. drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 66 150 5A 64 125 62 60 100 V BR(DSS) [V] E AS [mJ] 8A 75 12A 50 58 56 54 52 50 25 48 46 0 0 50 100 150 -60 200 -20 20 T j [°C] 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 25 A pulsed parameter: V DD 12 11 V V GS 44 V 10 Qg V GS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 10 20 30 40 50 Q gate [nC] Rev. 1.0 page 7 2006-04-03 IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-04-03