Fairchild FCD5N60TF 600v n-channel mosfet Datasheet

SuperFET
TM
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
• Typ. Rds(on)=0.81Ω
• Ultra low gate charge (typ. Qg=16nC)
• Low effective output capacitance (typ. Coss.eff=32pF)
• 100% avalanche tested
D
D
G
G
S
D-PAK
FCD Series
G D S
I-PAK
FCU Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
(Note 1)
FCD5N60 / FCU5N60
Unit
600
V
4.6
2.9
A
A
13.8
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
2.9
mJ
Avalanche Current
(Note 1)
4.6
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
PD
Power Dissipation
54
0.43
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCD5N60/FCU5N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
2.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
83
°C/W
©2006 Fairchild Semiconductor Corporation
FCD5N60/FCU5N60 Rev. A0
1
www.fairchildsemi.com
FCD5N60/FCU5N60 600V N-Channel MOSFET
July 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCD5N60
FCD5N60TM
D-PAK
380mm
16mm
2500
FCD5N60
FCD5N60TF
D-PAK
380mm
16mm
2000
FCU5N60
FCU5N60
I-PAK
--
--
70
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250µA, TJ = 150°C
--
650
--
V
ID = 250µA, Referenced to 25°C
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 4.6A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.81
0.95
Ω
--
3.8
--
S
--
470
600
pF
--
250
320
pF
--
22
--
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 2.3A
gFS
Forward Transconductance
VDS = 40V, ID = 2.3A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
12
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
32
--
pF
VDD = 300V, ID = 4.6A
RG = 25Ω
--
12
30
ns
--
40
90
ns
--
47
95
ns
--
22
55
ns
--
16
--
nC
--
2.8
--
nC
--
7
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 4.6A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
13.8
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 4.6A
--
--
1.4
V
trr
Reverse Recovery Time
--
295
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 4.6A
dIF/dt =100A/µs
--
2.7
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 4.6A, di/dt ≤ 1200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCD5N60/FCU5N60 Rev. A0
2
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
ID , Drain Current [A]
ID, Drain Current [A]
1
10
0
10
10
o
150 C
o
25 C
0
10
o
-55 C
* Note
1. VDS = 40V
* Notes :
1. 250µs Pulse Test
o
2. TC = 25 C
-1
10
2. 250µs Pulse Test
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.5
1
ID , Drain Current [A]
RDS(ON) [Ω],
Drain-Source On-Resistance
3.0
VGS = 10V
2.0
1.5
VGS = 20V
1.0
10
o
150 C
o
25 C
0
10
o
-55 C
* Note
1. VDS = 40V
o
* Note : TJ = 25 C
0.5
0.0
2.5
5.0
7.5
10.0
12.5
2. 250µs Pulse Test
-1
10
15.0
2
ID, Drain Current [A]
4
Figure 5. Capacitance Characteristics
8
10
Figure 6. Gate Charge Characteristics
12
1500
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
VGS, Gate-Source Voltage [V]
Crss = Cgd
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
*Notes :
1. VGS = 0 V
1000
2. f = 1 MHz
Coss
Ciss
500
Crss
VDS = 400V
8
6
4
2
* Note : ID = 4.6A
0
0
0
10
1
10
0
5
10
15
o
QG, Total Gate Charge [ C]
VDS, Drain-Source Voltage [V]
FCD5N60/FCU5N60 Rev. A0
VDS = 250V
10
3
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250µA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10V
0.5
2. ID = 2.3A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
2
4
10 µs
1
ID, Drain Current [A]
ID, Drain Current [A]
200
5
10
100 µs
0
10
DC
1 ms
10 ms
100 ms
* Notes :
o
1. TC = 25 C
-1
150
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
is Limited by R DS(on)
10
100
o
Figure 9. Maximum Safe Operating Area
10
50
TJ, Junction Temperature [ C]
3
2
1
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0
25
3
10
10
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
D = 0 .5
1 0
0
0 .2
* N o te s :
1 . Z θJC (t) =
0 .1
o
C /W
M a x .
3 . T
J M
- T
C
=
P
D M
* Z
θ J C
(t)
0 .0 2
-1
0 .0 1
PDM
Z
s in g le
1 0
2 .3
2 . D u ty F a c to r , D = t1/t2
0 .0 5
1 0
θJC
(t), Thermal Response
Figure 11. Transient Thermal Response Curve
t1
p u ls e
t2
-2
1 0
-5
1 0
-4
1 0
-3
t1, S q u a re
FCD5N60/FCU5N60 Rev. A0
1 0
W a v e
-2
P u ls e
4
1 0
-1
D u r a t io n
1 0
0
1 0
1
[s e c ]
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCD5N60/FCU5N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCD5N60/FCU5N60 Rev. A0
5
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCD5N60/FCU5N60 Rev. A0
6
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FCD5N60/FCU5N60 Rev. A0
7
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FCD5N60/FCU5N60 600V N-Channel MOSFET
Package Dimensions
(Continued)
I-PAK
Dimensions in Millimeters
FCD5N60/FCU5N60 Rev. A0
8
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Definition
Advance Information
Formative or In
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This datasheet contains the design specifications for
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Rev. I20
FCD5N60/FCU5N60 Rev. A0
9
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FCD5N60/FCU5N60 600V N-Channel MOSFET
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