ACE ACE16904BPN+H N-channel enhancement mode power mosfet Datasheet

ACE16904B
N-Channel Enhancement Mode Power MOSFET
Description
ACE16904B uses advanced trench technology and desgin to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features

VDS = 60V , ID = 50A

RDS(ON) @VGS = 10V , TYP9.8mΩ

RDS(ON) @VGS = 4.5V , TYP12mΩ
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
TA=25 OC
Drain Current (Continuous)*AC
O
TA=100 C
ID
50
A
31
Drain Current (Pulse)*B
IDM
200
A
Single Pulse Avalanche Energy2
EAS
61
mJ
Single Pulse Avalanche Current2
IAS
35
A
96
W
0.77
W/ OC
TA=25 OC
Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
PD
TJ,TSTG
O
-55 to 150
C
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still
air environment with TA=25°C. The value in any given application depends on the user's specific board
design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Thermal Characteristics
Parameter
Symbol
Max
Unit
Maximum Junction-to-Ambient
RθJA
62
O
C /W
Maximum Junction-to-Case
RθJC
1.3
O
C /W
VER 1.1
1
ACE16904B
N-Channel Enhancement Mode Power MOSFET
Packaging Type
DFN5*6-8L-EP
Ordering information
ACE16904B XX + H
Halogen - free
Pb - free
PN: DFN5*6-8L-EP
Drain-Source Diode Characteristics
Parameter
Symbol
Continuous Source Current
IS
Test Conditions
Max
Unit
55
A
220
A
1
V
VG=VD=0V , Force Current
Pulsed Source Current3
ISM
Diode Forward Voltage3
VSD
VGS=0V , IS=1A , TJ=25°C
VER 1.1
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ACE16904B
N-Channel Enhancement Mode Power MOSFET
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
VGS = 0V, ID= 250μA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
BVDSS Temperature Coefficient
△BVDSS/△TJ
Zero Gate Voltage Drain Current
Reference to 25°C ,
V
0.03
ID=1mA
VDS = 60 V, VGS = 0V,
1
TJ=25°C
IDSS
uA
VDS = 48 V, VGS =
10
0V , TJ=125°C
Gate Threshold Voltage
VGS(th)
VGS(th) Temperature Coefficient
△VGS(th)
Gate Leakage Current
IGSS
VDS=VGS, IDS=250uA
1.2
1.6
2.5
V
±100
nA
4
VGS=±20V, VDS=0V
VGS=10V, ID=10A
9.8
12
VGS=4.5V, ID=8A
12
15
gFS
VDS=10V, ID=6A
11.7
Diode Forward Voltage
VSD
ISD=1A, VGS=0V
Diode Forward Current
IS
Static Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
mΩ
S
1
V
55
A
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Qgd
Td(on)
Turn-On Rise Time
tf
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDS=30V, ID=10A
VGS=10V
VDD=15V,ID=1A
VGS=10V, RGEN=6Ω
39
59
5.9
9
8.9
9.6
14
18
28.2
54
45.3
86
10.9
21
nC
ns
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
VDS=25V, VGS=0V
f=1MHz
2100
165
pF
80
VGS =0V, VDS =0V,
F=1MHz
Ω
1.6
Note:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25Ω,Starting TJ=25°C.
3.
The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
4.
Essentially independent of operating temperature.
VER 1.1
3
ACE16904B
N-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
VER 1.1
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ACE16904B
N-Channel Enhancement Mode Power MOSFET
VER 1.1
5
ACE16904B
N-Channel Enhancement Mode Power MOSFET
Packing Information
DFN5*6-8L-EP
VER 1.1
6
ACE16904B
N-Channel Enhancement Mode Power MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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