ACE16904B N-Channel Enhancement Mode Power MOSFET Description ACE16904B uses advanced trench technology and desgin to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V , ID = 50A RDS(ON) @VGS = 10V , TYP9.8mΩ RDS(ON) @VGS = 4.5V , TYP12mΩ Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TA=25 OC Drain Current (Continuous)*AC O TA=100 C ID 50 A 31 Drain Current (Pulse)*B IDM 200 A Single Pulse Avalanche Energy2 EAS 61 mJ Single Pulse Avalanche Current2 IAS 35 A 96 W 0.77 W/ OC TA=25 OC Power Dissipation Derate above 25°C Operating and Storage Temperature Range PD TJ,TSTG O -55 to 150 C A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Thermal Characteristics Parameter Symbol Max Unit Maximum Junction-to-Ambient RθJA 62 O C /W Maximum Junction-to-Case RθJC 1.3 O C /W VER 1.1 1 ACE16904B N-Channel Enhancement Mode Power MOSFET Packaging Type DFN5*6-8L-EP Ordering information ACE16904B XX + H Halogen - free Pb - free PN: DFN5*6-8L-EP Drain-Source Diode Characteristics Parameter Symbol Continuous Source Current IS Test Conditions Max Unit 55 A 220 A 1 V VG=VD=0V , Force Current Pulsed Source Current3 ISM Diode Forward Voltage3 VSD VGS=0V , IS=1A , TJ=25°C VER 1.1 2 ACE16904B N-Channel Enhancement Mode Power MOSFET Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. VGS = 0V, ID= 250μA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS BVDSS Temperature Coefficient △BVDSS/△TJ Zero Gate Voltage Drain Current Reference to 25°C , V 0.03 ID=1mA VDS = 60 V, VGS = 0V, 1 TJ=25°C IDSS uA VDS = 48 V, VGS = 10 0V , TJ=125°C Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient △VGS(th) Gate Leakage Current IGSS VDS=VGS, IDS=250uA 1.2 1.6 2.5 V ±100 nA 4 VGS=±20V, VDS=0V VGS=10V, ID=10A 9.8 12 VGS=4.5V, ID=8A 12 15 gFS VDS=10V, ID=6A 11.7 Diode Forward Voltage VSD ISD=1A, VGS=0V Diode Forward Current IS Static Drain-Source On-Resistance RDS(ON) Forward Transconductance mΩ S 1 V 55 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Qgd Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=30V, ID=10A VGS=10V VDD=15V,ID=1A VGS=10V, RGEN=6Ω 39 59 5.9 9 8.9 9.6 14 18 28.2 54 45.3 86 10.9 21 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VDS=25V, VGS=0V f=1MHz 2100 165 pF 80 VGS =0V, VDS =0V, F=1MHz Ω 1.6 Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25Ω,Starting TJ=25°C. 3. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%. 4. Essentially independent of operating temperature. VER 1.1 3 ACE16904B N-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics VER 1.1 4 ACE16904B N-Channel Enhancement Mode Power MOSFET VER 1.1 5 ACE16904B N-Channel Enhancement Mode Power MOSFET Packing Information DFN5*6-8L-EP VER 1.1 6 ACE16904B N-Channel Enhancement Mode Power MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7