Diodes MMST3904 Npn small signal surface mount transistor Datasheet

MMST3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMST3906)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 3 and 4)
C
B C
B
Mechanical Data
•
•
•
•
•
•
•
•
SOT-323
A
E
G
H
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Marking Information: K2N - See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.006 grams (approximate)
Maximum Ratings
K
M
J
D
E
L
C
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
α
0°
8°
All Dimensions in mm
E
B
Dim
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current – Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30082 Rev. 11 - 2
1 of 4
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MMST3904
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
V
IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
5.0
⎯
V
IE = 10μA, IC = 0
ICEX
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
IBL
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.25
0.30
V
Base-Emitter Saturation Voltage
VBE(SAT)
0.65
⎯
0.85
0.95
V
OFF CHARACTERISTICS (Note 5)
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Cobo
⎯
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
kΩ
Voltage Feedback Ratio
hre
0.5
8.0
x 10
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
1.0
40
μS
Current Gain-Bandwith Product
fT
300
⎯
MHz
Noise Figure
NF
⎯
5.0
dB
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
Output Capacitance
-4
VCE = 10V, IC = 1.0mA,
f = 1.0MHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCC = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0MHz
SWITCHING CHARACTERISTICS
Notes:
VCC = 3.0V, IC = 10mA,
VBE(OFF) = -0.5V, IB1 = 1.0mA
5. Short duration pulse test used to minimize self-heating effect.
DS30082 Rev. 11 - 2
2 of 4
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MMST3904
© Diodes Incorporated
15
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
5
50
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs.
Ambient Temperature
0
0.1
200
1,000
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1
TA = 125°C
hFE, DC CURRENT GAIN
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2 Input and Output Capacitance vs.
Collector-Base Voltage
100
T A = -25°C
TA = +25°C
10
0.1
VCE = 1.0V
1
0.1
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
0.01
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter
Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
10
1
0.1
0.1
1
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30082 Rev. 11 - 2
3 of 4
www.diodes.com
MMST3904
© Diodes Incorporated
Ordering Information
(Notes 4 and 6)
Packaging
SOT-323
Device
MMST3904-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K2N
K2N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
1998
J
Month
Code
1999
K
Jan
1
2000
L
Feb
2
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2005
S
2004
R
Jun
6
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Jul
Aug
Sep
Oct
Nov
Dec
7
8
9
O
N
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30082 Rev. 11 - 2
4 of 4
www.diodes.com
MMST3904
© Diodes Incorporated
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