ES3A thru ES3M Pb Free Plating Product ® Pb ES3A thru ES3M 3 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes FEATURE OUTLINE Glass passivated chip junction The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Unit:inch(millimeter) Cathode Band 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) MECHANICAL DATA Case:SMC/DO-214AB Package Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode band Mounting Position: Any Weight: 0.22 gram approximately 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0.002(0.05) 0.320 (8.13) 0.305 (7.75) APPLICATION LED SMPS/Industrial power supply HID ballast stabilizer Telecommunication SMPS/LED street lamp SMC/DO-214AB Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half-wave, 60 Hz, resistive or inductive load, for capacitive load derate current by 20%. Parameter Symbols ES3A ES3B ES3C ES3D ES3F ES3G ES3J ES3K ES3M Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 800 1000 V Maximum Average Forward Current IF(AV) 3 A IFSM 100 A Peak Peak Forward Surge Current, 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at IF = 3 A Maximum DC Reverse Current TA = 25 OC at Rated DC Blocking Voltage TA = 100 OC Maximum Reverse Recovery Time Typical Junction Capacitance 1) 2) VF 0.95 1.7 10 IR 35 50 V µA 500 trr CJ 1.3 ns 40 pF Junction Temperature Range Tj - 55 to + 150 O Storage temperature range Ts - 55 to + 150 O 1) 2) C C Reverse recovery test conditions: IF = 0.5 A, IR = 1 A, Irr = 0.25 A Measured at 1 MHz and applied reverse voltage of 4 V D.C. Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ES3A thru ES3M ® G RATINGS AND CHARACTERISTIC CURVES ES3A thru ES3M Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/