EGF1A THRU EGF1D ULTRAFAST SURFACE MOUNT RECTIFIER * Reverse Voltage - 50 to 200 Volts Forward Current - 1.0 Ampere FEATURES P A T E N T E D DO-214BA 0.060 (1.52) 0.040 (1.02) 0.187 (4.75) 0.167 (4.24) 0.0105 (0.27) 0.0065 (0.17) 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.106 (2.69) 0.114 (2.90) 0.094 (2.39) 0.152 TYP. 0.006 0.060 (1.52) 0.030 (0.76) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for surface mount automotive applications ♦ High temperature metallurgically bonded construction ♦ Superfast recovery times for high efficiency ♦ Glass passivated cavity-free junction ♦ Built-in strain relief ♦ Easy pick and place ♦ High temperature soldering guaranteed: 450°C/5 seconds at terminals ♦ Complete device submersible temperature of 265°C for 10 seconds in solder bath MECHANICAL DATA 0.226 (5.74) 0.196 (4.98) Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 ® Case: JEDEC DO-214BA molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0048 ounces, 0.120 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS Device Marking Code EGF1A EGF1B EGF1C EGF1D EA EB EC ED 100 150 200 Volts Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage UNITS VRMS 35 70 105 140 Volts Maximum DC blocking voltage VDC 50 100 150 200 Volts Maximum average forward rectified current at TL=125°C I(AV) 1.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30.0 Amps VF 1.0 Volts IR 5.0 50.0 µA Typical reverse recovery time (NOTE 1) trr 50.0 ns Typical junction capacitance (NOTE 2) CJ 15.0 pF RΘJA RΘJL 85.0 30.0 °C/W TJ,TSTG -65 to +175 °C Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage TA=25°C TA=125°C Typical thermal resistance (NOTE 3) Operating junction and storage temperature range NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied VR=4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 4/98 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1 - MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 30 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTICS CURVES EGF1A THRU EGF1D RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED on 0.2 x 0.2” (5.0 x 5.0mm) COPPER PAD AREAS 0.5 0 25 0 50 75 125 100 150 175 TJ=TJ max. 8.3ms SINGLE HALF SINE WAVE (JEDEC Method) 25 20 15 10 5.0 0 LEAD TEMPERATURE, °C 1 100 10 NUMBER OF CYCLES AT 60 HZ FIG. 3 -TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, AMPERES 10 INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 1,000 PULSE WIDTH=300µs 1% DUTY CYCLE TJ=25°C TJ=150°C 1 0.1 100 TJ=150°C 10 TJ=100°C 1 0.1 TJ=25°C 0 0 0.01 0.2 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, % 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, °C/W FIG. 5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 70 TJ=25°C f=1.0 MHz Vsig=50mVp-p 60 50 40 30 20 10 0 0.1 1 10 REVERSE VOLTAGE, VOLTS 100 100 10 1 0.1 0.01 0.1 1 10 t, PULSE DURATION, sec. 100