MJH11017, MJH11019, MJH11021(PNP) MJH11018, MJH11020, MJH11022(NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • • • http://onsemi.com 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS MARKING DIAGRAM VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21 Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb−Free Packages are Available* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ SOT−93 (TO−218) CASE 340D STYLE 1 AYWWG MJH110xx MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Collector−Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Emitter−Base Voltage VEB 5.0 Vdc IC 15 30 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 1.2 W W/_C TJ, Tstg – 65 to + 150 _C Collector Current − Continuous − Peak (Note 1) Operating and Storage Junction Temperature Range Max Unit Vdc 150 200 250 Vdc 150 200 250 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.83 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. A Y WW G MJH110xx © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 6 1 Assembly Location Year Work Week Pb−Free Package Device Code xx = 17, 19, 21, 18, 20, 22 ORDERING INFORMATION Device MJH11017 MJH11017G MJH11018 MJH11018G MJH11019 MJH11019G MJH11020 MJH11020G MJH11021 MJH11021G MJH11022 MJH11022G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. = = = = = Package Shipping SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail SOT−93 30 Units / Rail SOT−93 (Pb−Free) 30 Units / Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJH11017/D MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 150 200 250 − − − − − − 1.0 1.0 1.0 − − 0.5 5.0 − 2.0 400 100 15,000 − − − 2.5 4.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 0.1 Adc, IB = 0) VCEO(sus) MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 Collector Cutoff Current (VCE = 75 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) (VCE = 125 Vdc, IB = 0) Vdc ICEO MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) ICEV Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO mAdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA) − VCE(sat) Vdc Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) − 2.8 Vdc Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) − 3.8 Vdc fT 3.0 − − Cob − − 400 600 pF hfe 75 − − DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11018, MJH11020, MJH11022 MJH11017, MJH11019, MJH11021 Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Typical Characteristic Delay Time Rise Time Storage Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 Symbol NPN PNP Unit td 150 75 ns tr 1.2 0.5 ms ts 4.4 2.7 ms tf 2.5 2.5 ms MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) VCC 100 V RC TUT V2 APPROX +12 V 0 V1 APPROX −8.0 V RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.: 1N5825 used above IB ≈ 100 mA MSD6100 used below IB ≈ 100 mA tr, tf ≤ 10 ns Duty Cycle = 1.0% SCOPE RB 51 D1 +4.0 V 25 ms For td and tr, D1 is disconnected and V2 = 0 For NPN test circuit, reverse diode and voltage polarities. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.01 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 P(pk) RqJC(t) = r(t) RqJC RqJC = 0.83°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.05 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000 Figure 3. Thermal Response FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) TC = 25°C SINGLE PULSE 30 20 10 5.0 2.0 1.0 0.5 0.2 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 2.0 3.0 5.0 10 20 30 50 100 150 250 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) REVERSE BIAS IC, COLLECTOR CURRENT (AMPS) 30 For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. L = 200 mH IC/IB1 ≥ 50 TC = 100°C VBE(off) = 0−5.0 V RBE = 47 W DUTY CYCLE = 10% 20 10 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 0 0 20 60 100 140 180 220 260 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) PNP 000 000 000 NPN 10,000 VCE = 5.0 V hFE , DC CURRENT GAIN 000 000 TC = 150°C 000 25°C 500 −55 °C 200 00 0.2 0.3 VCE = 5.0 V 5000 0.5 0.7 TC = 150°C 2000 25°C 1000 500 −55 °C 200 1.0 3.0 5.0 10 15 100 0.2 0.3 IC, COLLECTOR CURRENT (AMPS) 0.5 0.7 1.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain http://onsemi.com 4 10 15 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) NPN VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) PNP 4.5 TJ = 25°C 4.0 3.5 3.0 2.5 IC = 15 A 2.0 IC = 10 A 1.5 1.0 1.0 IC = 5.0 A 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IB, BASE CURRENT (mA) 1000 4.5 TJ = 25°C 4.0 3.5 3.0 IC = 15 A 2.5 2.0 IC = 10 A 1.5 1.0 1.0 IC = 5.0 A 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) Figure 7. Collector Saturation Region PNP NPN 4.0 4.0 TJ = 25°C 3.5 3.0 VOLTAGE (VOLTS) VOLTAGE (VOLTS) 3.5 2.5 VBE(sat) @ IC/IB = 100 2.0 1.5 VBE @ VCE = 5.0 V 1.0 0.5 0.7 1.0 2.0 3.0 3.0 2.5 VBE(sat) @ IC/IB = 100 2.0 1.5 VBE @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 100 0.5 0.2 0.3 TJ = 25°C 5.0 7.0 10 0.5 0.2 20 IC, COLLECTOR CURRENT (AMPS) VCE(sat) @ IC/IB = 100 0.5 0.7 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 8. “On” Voltages PNP NPN MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022 COLLECTOR BASE COLLECTOR BASE EMITTER EMITTER Figure 9. Darlington Schematic http://onsemi.com 5 20 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U S E DIM A B C D E G H J K L Q S U V 4 A L 1 K 2 3 D J H MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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