FS5AS-2 High-Speed Switching Use Nch Power MOS FET REJ03G0243-0200 Rev.2.00 Nov 21, 2006 Features • • • • • Drive voltage : 10 V VDSS : 100 V rDS(ON) (max) : 0.47 Ω ID : 5 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Symbol VDSS VGSS ID IDM IDA Ratings 100 ±20 5 20 5 Unit V V A A A Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass IS ISM PD Tch Tstg — 5 20 20 – 55 to +150 – 55 to +150 0.32 A A W °C °C g Rev.2.00 Nov 21, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH Typical value FS5AS-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Rev.2.00 Nov 21, 2006 Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr page 2 of 6 Min. 100 — — 2.0 — — — — — — — — — — — — — Typ. — — — 3.0 0.33 0.66 4.0 280 75 18 15 8 17 7 1.0 — 80 Max. — ±0.1 0.1 4.0 0.47 0.94 — — — — — — — — 1.5 6.25 — Unit V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VGS = 10 V ID = 2 A, VDS = 5 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 2 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 2 A, VGS = 0 V Channel to case IS = 5 A, dis/dt = –100 A/µs FS5AS-2 Performance Curves Maximum Safe Operating Area 40 3 2 Drain Current ID (A) 32 24 16 8 0 0 Drain Current ID (A) 10 50 100 150 101 7 5 3 2 tw = 10µs 100µs 100 7 5 3 2 1ms 10ms DC 10–1 7 Tc = 25°C 5 Single Pulse 3 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 200 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 5.0 PD = 20W VGS = 20V 10V Tc = 25°C Pulse Test 8V 6V 8 6 4 5V 2 Drain Current ID (A) Drain Power Dissipation PD (W) Drain Power Dissipation Derating Curve 4.0 VGS = 20V 10V 6V 8V 3.0 5V 2.0 1.0 Tc = 25°C Pulse Test 0 1.0 2.0 3.0 4.0 5.0 0.8 1.2 1.6 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) Tc = 25°C Pulse Test 4.0 ID = 8A 3.0 2.0 5A 1.0 2A 0 0.4 Drain-Source Voltage VDS (V) 5.0 0 0 Drain-Source Voltage VDS (V) 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 4V 0 Nov 21, 2006 page 3 of 6 20 Drain-Source On-State Resistance rDS(ON) (Ω) Drain-Source On-State Voltage VDS(ON) (V) 0 2.0 0.5 Tc = 25°C Pulse Test 0.4 VGS = 10V 0.3 20V 0.2 0.1 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Drain Current ID (A) FS5AS-2 Forward Transfer Admittance vs. Drain Current (Typical) 8 6 4 2 0 Capacitance (pF) Tc = 25°C VDS = 10V Pulse Test 0 4 8 12 16 20 75°C 100 7 5 4 3 125°C 2 VDS = 5V Pulse Test 10–1 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 103 7 5 3 2 2 Ciss 102 7 5 3 2 Coss 101 Crss 7 5 3 Tch = 25°C 2 f = 1MHz VGS = 0V 100 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 7 5 Tch = 25°C VDD = 50V VGS = 10V RGDN = RGS = 50Ω tf td(off) 3 2 td(on) 101 7 5 tr 3 2 10–1 2 3 4 5 7 100 2 3 4 5 7 101 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 20 Tch = 25°C ID = 5A VGS = 0V Pulse Test Source Current IS (A) Gate-Source Voltage VGS (V) Tc = 25°C 2 Drain Current ID (A) 20 16 VDS = 20V 12 50V 80V 8 4 0 0 4 8 12 16 Gate Charge Qg (nC) Rev.2.00 101 7 5 4 3 Gate-Source Voltage VGS (V) Switching Time (ns) Drain Current ID (A) 10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) Nov 21, 2006 page 4 of 6 20 16 12 Tc = 125°C 8 75°C 25°C 4 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 Gate-Source Threshold Voltage VGS(th) (V) 101 7 VGS = 10V I = 1/2 ID 5 D 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 100 150 Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 102 7 5 3 2 101 7 D = 1.0 5 0.5 3 0.2 2 PDM 100 7 5 3 2 0.1 0.05 0.02 0.01 Single Pulse tw D= T tw T 10–1 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Channel Temperature Tch (°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS5AS-2 Nov 21, 2006 page 5 of 6 tr 90% td(off) tf FS5AS-2 Package Dimensions Previous Code 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZA-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity 3000 Standard order code Type name – T +Direction (1 or 2) +3 75 Type name Plastic Magazine (Tube) Note : Please confirm the specification about the shipping in detail. Rev.2.00 Nov 21, 2006 page 6 of 6 Standard order code example FS5AS-2-T13 FS5AS-2 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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