Weitron BC846AW General purpose transistor npn silicon Datasheet

BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
General Purpose Transistor
NPN Silicon
COLLECTOR
3
1
BASE
3
1
2
2
EMITTER
SOT-323(SC-70)
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
65
45
30
80
50
30
6.0
6.0
5.0
Unit
Vdc
100
mAdc
Vdc
Vdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (Note 1.)
Junction and Storage, Temperature Range
Symbol
PD
Max
Unit
150
2.4
R qJA
833
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
Device Marking
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;
1.FR-5=1.0 x 0.75 x 0.062 in.
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BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
WE IT R ON
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage BC846A Series
BC847A Series
(IC= 10mA)
BC848A Series
V(BR)CEO
65
45
30
-
-
V
Collector-Emitter Breakdown Voltage BC846A Series
(IC=10 uA ,VEB=0)
BC847A Series
BC848A Series
V(BR)CES
80
50
30
-
-
V
Collector-Base Breakdown Voltage
(IC=10 uA)
BC846A Series
BC847A Series
BC848A Series
V(BR)CBO
80
50
30
-
-
V
Emitter-Base Breakdown Voltage
(IE=1.0 uA)
BC846A Series
BC847A Series
BC848A Series
V(BR)EBO
6.0
6.0
5.0
-
-
V
-
-
15
5.0
nA
mA
110
200
420
90
150
270
180
290
520
220
450
800
-
0.25
0.6
Characteristics
Unit
Off Characteristics
Collector Cutoff Current (VCB=30V)
(VCB=30V, TA=150 C)
ICBO
On Characteristics
DC Current Gain
(IC= 10uA, VCE=5.0V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE
(IC= 2.0mA, VCE=5.0V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C,
Collector-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
Base-Emitter Saturation Voltage
(IC= 10mA, IB=0.5mA)
(IC= 100mA, IB=5.0mA)
VCE(sat)
-
VBE(sat)
-
Base-Emitter On Voltage
(IC= 2.0mA, VCE=5.0V)
(IC= 10mA, VCE=5.0V)
VBE(on)
580
-
-0.7
-0.9
-
660
-
700
770
-
-
V
V
V
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= 10mA, VCE= 5.0Vdc, f=100MHz)
Output Capacitance
(VCB= 10V, f=1.0MHz)
Noise Figure
(IC= 0.2mA, VCE= 5.0Vdc,
BC846A,B, BC847A,B,C, BC848A,B,C,
Rs=2.0 k Ω ,
f=1.0 kHz, BW=200Hz)
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fT
100
-
Cobo
-
-
4.5
MHz
pF
dB
NF
-
-
10
BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
WE IT R ON
1.0
2.0
TA=25 C
0.9
VCE=10V
TA=25 C
1.5
V, VOLTAGE (VOLTS)
hFE,NORMALIZED DC CURRENT GAIN
BC847 & BC848 Series
1.0
0.8
0.6
0.4
0.8
VBE(sat)@IC/BC=10
0.7
VBE(ON)@VCE= 10V
0.6
0.5
0.4
0.3
0.2
0.3
VCE(sat)@IC/BC=10
0.1
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
0.1
200
2.0
1.6
IC= 200mA
1.2
IC=
10mA
0.4
0
IC= 100mA
IC=-50mA
IC= 20mA
0.02
0.1
1.0
10
20
Cib
3.0
1.0
0.4
Cob
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
C,CAPACITANCE (pF)
TA=25 C
2.0
5.0 7.0 10
20 30 50
70 100
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
0.2
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. Base-Emitter Temperature Coefficient
10
5.0
2.0 3.0
1.0
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
7.0
0.5 0.7 1.0
Firure2. "Saturation" And "On" Voltage
TA=25 C
0.8
0.2 0.3
IC, COLLECTOR CURRENT (mAdc)
qVB, TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
400
300
200
VCE=10V
TA= 25 C
100
80
60
40
30
20
0.5 0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
50
BC846AW/BW/CW
BC847AW/BW/CW
BC878AW/BW/CW
WE IT R ON
1.0
TA=25 C
VCE=5V
TA=25 C
0.8
VBE(sat)@IC/IB=10
2.0
V,Voltage (Volts)
hFE, DC CURRENT GAIN (NORAMALIZED)
BC846 Series
1.0
0.5
0.6
VBE@VCE=-5.0V
0.4
0.2
0.2
VCE(sat)@IC/IB=10
0.1 0.2
1.0
10
0
100
IC, COLLECTOR CURRENT (mA)
0.2
0.5
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT(mA)
2.0
TA=25 C
1.6
20mA
50mA
100mA
200mA
1.2
0.8
0.4
IC=
10mA
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
1.0
1.4
1.8
qVB for VBE
-55 C to 125 C
2.2
2.6
3.3
20
0.2
0.5
1.0
IB, BASE CURRENT (mA)
fT, CURRENT-GAIN-BANDWIDTH PRODUCT
C. CAPACTIANCE (pF)
TA=25 C
Cib
10
8.0
6.0
2.0
0.1
Cob
0.2
0.5
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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5.0
10
20
50
100
Figure 10. Base-Emitter Temperature Coefficient
40
4.0
-2.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
20
200
Figure 8. "ON" Voltage
qVB TEMPERATURE COEFFICIENT (mV/ C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7.DC Current Gain
100
50
100
500
VCE=5.0V
TA=25 C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12.Current-Gain-Bandwidth Product
200
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