BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 3 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage BC846 BC847 BC848 BC846 BC847 BC848 BC846 BC847 BC848 Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 65 45 30 80 50 30 6.0 6.0 5.0 Unit Vdc 100 mAdc Vdc Vdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (Note 1.) Junction and Storage, Temperature Range Symbol PD Max Unit 150 2.4 R qJA 833 mW mW/ C C/W TJ,Tstg -55 to +150 C Device Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J; BC848B;=1K; BC848C=1L; 1.FR-5=1.0 x 0.75 x 0.062 in. WE ITR O N http://www.weitron.com.tw BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW WE IT R ON Electrical Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Typ Max Collector-Emitter Breakdown Voltage BC846A Series BC847A Series (IC= 10mA) BC848A Series V(BR)CEO 65 45 30 - - V Collector-Emitter Breakdown Voltage BC846A Series (IC=10 uA ,VEB=0) BC847A Series BC848A Series V(BR)CES 80 50 30 - - V Collector-Base Breakdown Voltage (IC=10 uA) BC846A Series BC847A Series BC848A Series V(BR)CBO 80 50 30 - - V Emitter-Base Breakdown Voltage (IE=1.0 uA) BC846A Series BC847A Series BC848A Series V(BR)EBO 6.0 6.0 5.0 - - V - - 15 5.0 nA mA 110 200 420 90 150 270 180 290 520 220 450 800 - 0.25 0.6 Characteristics Unit Off Characteristics Collector Cutoff Current (VCB=30V) (VCB=30V, TA=150 C) ICBO On Characteristics DC Current Gain (IC= 10uA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C hFE (IC= 2.0mA, VCE=5.0V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C, Collector-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) Base-Emitter Saturation Voltage (IC= 10mA, IB=0.5mA) (IC= 100mA, IB=5.0mA) VCE(sat) - VBE(sat) - Base-Emitter On Voltage (IC= 2.0mA, VCE=5.0V) (IC= 10mA, VCE=5.0V) VBE(on) 580 - -0.7 -0.9 - 660 - 700 770 - - V V V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= 10mA, VCE= 5.0Vdc, f=100MHz) Output Capacitance (VCB= 10V, f=1.0MHz) Noise Figure (IC= 0.2mA, VCE= 5.0Vdc, BC846A,B, BC847A,B,C, BC848A,B,C, Rs=2.0 k Ω , f=1.0 kHz, BW=200Hz) WEITRON http://www.weitron.com.tw fT 100 - Cobo - - 4.5 MHz pF dB NF - - 10 BC846AW/BW/CW BC847AW/BW/CW BC848AW/BW/CW WE IT R ON 1.0 2.0 TA=25 C 0.9 VCE=10V TA=25 C 1.5 V, VOLTAGE (VOLTS) hFE,NORMALIZED DC CURRENT GAIN BC847 & BC848 Series 1.0 0.8 0.6 0.4 0.8 VBE(sat)@IC/BC=10 0.7 VBE(ON)@VCE= 10V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat)@IC/BC=10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 0.1 200 2.0 1.6 IC= 200mA 1.2 IC= 10mA 0.4 0 IC= 100mA IC=-50mA IC= 20mA 0.02 0.1 1.0 10 20 Cib 3.0 1.0 0.4 Cob 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances WEITRON http://www.weitron.com.tw 40 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) C,CAPACITANCE (pF) TA=25 C 2.0 5.0 7.0 10 20 30 50 70 100 -55 C to +125 C 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter Temperature Coefficient 10 5.0 2.0 3.0 1.0 IB, BASE CURRENT (mA) Figure 3. Collector Saturation Region 7.0 0.5 0.7 1.0 Firure2. "Saturation" And "On" Voltage TA=25 C 0.8 0.2 0.3 IC, COLLECTOR CURRENT (mAdc) qVB, TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR- EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mAdc) Figure1.Normalized DC Current Gain 400 300 200 VCE=10V TA= 25 C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 6. Current-Gain- Bandwidth Product 50 BC846AW/BW/CW BC847AW/BW/CW BC878AW/BW/CW WE IT R ON 1.0 TA=25 C VCE=5V TA=25 C 0.8 VBE(sat)@IC/IB=10 2.0 V,Voltage (Volts) hFE, DC CURRENT GAIN (NORAMALIZED) BC846 Series 1.0 0.5 0.6 VBE@VCE=-5.0V 0.4 0.2 0.2 VCE(sat)@IC/IB=10 0.1 0.2 1.0 10 0 100 IC, COLLECTOR CURRENT (mA) 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT(mA) 2.0 TA=25 C 1.6 20mA 50mA 100mA 200mA 1.2 0.8 0.4 IC= 10mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 1.4 1.8 qVB for VBE -55 C to 125 C 2.2 2.6 3.3 20 0.2 0.5 1.0 IB, BASE CURRENT (mA) fT, CURRENT-GAIN-BANDWIDTH PRODUCT C. CAPACTIANCE (pF) TA=25 C Cib 10 8.0 6.0 2.0 0.1 Cob 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance WEITRON http://www.weitron.com.tw 5.0 10 20 50 100 Figure 10. Base-Emitter Temperature Coefficient 40 4.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region 20 200 Figure 8. "ON" Voltage qVB TEMPERATURE COEFFICIENT (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7.DC Current Gain 100 50 100 500 VCE=5.0V TA=25 C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12.Current-Gain-Bandwidth Product 200