ASI ASTD-4050-820 Planar tunnel (back) diode Datasheet

ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
DESCRIPTION:
The ASTD Series of Tunnel Diodes
are Optimized for Operation as Back
Diode Detectors in Applications up
to 18 GHz.
PACKAGE STYLE 51
FEATURES INCLUDE:
• Excellent Temperature Stability
• Fast Rise / Fall Times
• Available in Die Form
MAXIMUM RATINGS
IR
10 mA
PDISS
3 ERG spike
PDISS
50 mW @ TA = +60 C
TJ
-65 to +110 C
TSTG
-65 to +125 C
O
O
O
ELECTRICAL CHARACTERISTICS
SYMBOL
VR
O
C
TEST CONDITIONS
IP
VF
TC = 25
IF = 3 mA
IR = 500 µA
MINIMUM TYPICAL MAXIMUM
ASTD 1020
100
200
ASTD 2030
200
300
ASTD 3040
300
400
ASTD 4050
400
500
ASTD 5060
500
600
ASTD 1020
135
ASTD 2030
130
ASTD 3040
125
ASTD 4050
120
ASTD 5060
110
400
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
UNITS
µA
mV
mV
REV. B
1/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
λ
F = 10 GHz
RL = 10 KΩ
F = 10 GHz
RL = 10 KΩ
PIN = -20 dBm
RS
O
C
Test Conditions
PIN = -20 dBm
RV
TC = 25
IR = 10 mA
Minimum
Typical
ASTD 1020
1,000
ASTD 2030
750
ASTD 3040
500
ASTD 4050
275
ASTD 5060
250
ASTD 1020
180
ASTD 2030
130
ASTD 3040
80
ASTD 4050
65
ASTD 5060
60
F = 100 MHz
Maximum
Units
mV/mW
Ω
7.0
Ω
ORDERING INFORMATION:
ASTD-XXXX-XX
_____
51 = Case Style 51
820 = Case Style 820
860 = Case Style 860
__________ 1020
2030
3040
4050
5060
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/3
ASTD SERIES
PLANAR TUNNEL (BACK) DIODE
PACKAGE STYLE 820
PACKAGE STYLE 860
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
3/3
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