MJE5852 ® HIGH VOLTAGE PNP POWER TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) -450 V V CEO Collector-Emitter Voltage (I B = 0) -400 V V EBO Emitter-Base Voltage (I C = 0) -7 V Collector Current -8 A Collector Peak Current (t p < 5ms) -16 A IC I CM Parameter Base Current -4 A I BM Base Peak Current (t p < 5ms) -8 A P tot Total Dissipation at T c ≤ 25 o C Storage Temperature 80 IB T stg Tj Max. Operating Junction Temperature September 2003 W -65 to 150 o C 150 o C 1/4 MJE5852 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = -1.5V) V CE = -450 V I EBO Emitter Cut-off Current (I C = 0) V EB = -6 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = -10 mA Min. Typ. Max. Unit -500 µA -1 mA -400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -4 A I C = -8 A I B = -1 A I B = -3 A -2 -5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -4 A I B = -1 A -1.5 V DC Current Gain I C = -2 A I C = -5 A V CE = -5 V V CE = -5 V 2 0.5 µs µs h FE ∗ ts tf RESISTIVE LOAD Storage Time Fall Time I C = -4 A I B1 = -IB2 = -1 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/4 V CC = -250 V t p = 40 µs 15 5 MJE5852 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 3/4 MJE5852 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4