Cree® EZ600™ Gen II LED Data Sheet CxxxEZ600-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES APPLICATIONS • • EZBright Power Chip LED RF Performance General Illumination – 450 & 460 nm - 200 mW min. – Automobile – 527 nm - 60 mW min. – Aircraft • Lambertian Radiation – Decorative Lighting • Conductive Epoxy, Solder Paste or Preforms, or – Task Lighting Flux Eutectic Attach – Outdoor Illumination • Low Forward Voltage – 3.5 V Typical at 350 mA • White LEDs • Single Wire Bond Structure • Crosswalk Signals • Maximum DC Forward Current - 400 mA • Backlighting • Dielectric Passivation Across Epi Surface CxxxEZ600-Sxx000-2 Chip Diagram A CPR3EE Rev Data Sheet: Top View Die Cross Section Bottom View EZBright LED Chip 580 x 580 μm2 Backside Metallization Gold Bond Pad 130 x 130 μm2 Cathode (-) t = 170 μm Anode (+); 3 μm AuSn Dielectric Passivation Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Note 1 CxxxEZ600-Sxx000-2 DC Forward Current 400 mA Peak Forward Current 600 mA LED Junction Temperature Note 3 145°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +120°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Forward Voltage (Vf, V) Note 2 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ600-Sxx00-2 3.1 3.5 4.1 2 20 C460EZ600-Sxx00-2 3.1 3.5 4.1 2 21 C527EZ600-Sxx00-2 3.1 3.5 4.1 2 35 Mechanical Specifications Description CxxxEZ600-Sxx000-2 Dimension Tolerance P-N Junction Area (μm) 550 x 550 ±40 Chip Area (μm) 580 x 580 ±40 170 ±25 Chip Thickness (μm) Top Au Bond Pad (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) 130 x 130 ±15 3.0 ±1.0 580 x 580 ±40 3.0 ±1.0 Notes: 1. 2. 3. 4. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C. Specifications are subject to change without notice. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 2 CPR3EE Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxEZ600-Sxx000-2 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ600-Sxx000-2) orders may be filled with any or all bins (CxxxEZ600-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ600-S20000-2 C450EZ600-0209-2 C450EZ600-0210-2 C450EZ600-0211-2 C450EZ600-0212-2 C450EZ600-0205-2 C450EZ600-0206-2 C450EZ600-0207-2 C450EZ600-0208-2 C450EZ600-0201-2 C450EZ600-0202-2 C450EZ600-0203-2 C450EZ600-0204-2 280 240 200 445 447.5 450 452.5 455 Radiant Flux (mW) Dominant Wavelength (nm) C460EZ600-S20000-2 C460EZ600-0209-2 C460EZ600-0210-2 C460EZ600-0211-2 C460EZ600-0212-2 C460EZ600-0205-2 C460EZ600-0206-2 C460EZ600-0207-2 C460EZ600-0208-2 C460EZ600-0201-2 C460EZ600-0202-2 C460EZ600-0203-2 C460EZ600-0204-2 280 240 200 455 457.5 460 462.5 465 Dominant Wavelength (nm) Radiant Flux (mW) C527EZ600-S06000-2 C527EZ600-0017-2 C527EZ600-0018-2 C527EZ600-0019-2 C527EZ600-0014-2 C527EZ600-0015-2 C527EZ600-0016-2 C527EZ600-0011-2 C527EZ600-0012-2 C527EZ600-0013-2 C527EZ600-0008-2 C527EZ600-0009-2 C527EZ600-0010-2 C527EZ600-0005-2 C527EZ600-0006-2 C527EZ600-0007-2 140 120 100 80 60 520 525 530 535 Dominant Wavelength (nm) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 3 CPR3EE Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Dominant Wavelength S Characteristic Curves 4 3 2 1 0 -1 -2 25 50 75 100 125 150 These are representative measurements for the EZ600 LED product. Actual curves will Temperature vary slightly Junction (°C) for the various radiant flux and dominant wavelength bins. Relative Light Intensity Vs Junction Temperature Forward Current vs. Forward Voltage 110% 350 105% Relative Light Intensity 400 300 If (mA) 250 200 150 100 50 100% 95% 90% 85% 80% 75% 70% 65% 0 0 1 2 3 4 25 5 50 Vf (V) Relative Intensity vs. Forward Current Dominant Wavelength Shift (nm) Relative Relative Intensity Intensity 75% 75% 50% 50% 25% 25% 50 50 100 100 150 150 200 200 250 250 300 300 350 350 5 4 3 2 1 0 -1 -2 25 400 400 50 100 125 150 Relative Light Shift Intensity Vs Junction Temperature Voltage Vs Junction Temperature 20 20 110% 0.100 16 16 105% 0.000 100% VoltageLight ShiftIntensity (V) Relative DW DW Shift Shift (nm) (nm) 75 Junction Temperature (°C) Wavelength Shift vs. Forward Current 12 12 8 8 4 4 0 0 -4 -4 -0.100 95% 90% -0.200 85% -0.300 80% -0.400 75% 70% -0.500 0 0 50 50 100 100 150 150 200 200 If (mA) 250 250 300 300 350 350 400 400 65% -0.600 25 25 50 50 75 75 CPR3EE Rev. A 100 100 125 125 150 150 Junction Temperature (°C) Junction Temperature (°C) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 4 150 6 If (mA) -8 -8 125 Dominant Wavelength Shift Vs Junction Temperature 100% 100% 0 0 100 Junction Temperature (°C) 125% 125% 0% 0% 75 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ600 are trademarks of Cree, Inc. 5 CPR3EE Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com