BZD27C Series Voltage Regulator Diodes BREAKDOWN VOLTAGE : 7 - 188 VOLTS PEAK PULSE POWER : 150 WATTS Sillicon planar zener diodes. Low profile surface-mount package. ◇ Zener and surge current specification ◇ ◇ Low leakage current Excellent stability ◇ High temperature soldering guaranteed: SOD-123FL Cathode Band Top View 1.9± 0.1 ◇ ◇ 1.0±0.2 Features 1.4± 0.15 265℃/10 seconds, at terminals 0.10-0.30 2.8±0.1 Mechanical Data 0.6±0.25 ◇ Case: JEDEC SOD-123FL molded plastic ◇ Polarity: Color band denotes positive end 3.7±0.2 ( cathode ) except for bidirectional ◇ Marking code: see TABLE 1 ◇ Weight: 0.006 ounces, 0.02 grams ◇ Mounting position: Any Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified SYMBOL VALUE UNITS PPPM 150 Watts Ptot 0.8 Watts Reverse current at stand-off voltage @ V WM IR SEE TABLE 1 µA Maximum instantaneous forward voltage at 0.2A VF 1.2 Volts Thermal resistance junction to ambient RθJA 180 K/W Operating temperature junction range TJ - 55 to +150 ℃ TSTG - 55 to +150 ℃ Non-repetitive peak pulse power dissipation with a 10/1000µs waveform (NOTE 1) Power dissipation at T A=25℃ (NOTE 2) Storage temperature range NOTES:(1)TJ=25℃ prior to surge. (2)Mounted on epoxy-glass PCB with 3×3 mm Cu pads(≥40µm thick) (3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000 µs pulse) ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:[email protected] BZD27C Series Voltage Regulator Diodes ELECTRICAL CHARACTERISTICS (at T =25℃ unless otherwise noted) J When used as voltage regulator diodes (NOTE 1) Differential resistance Temperature coefficient Vz@IzT rdif@Iz αz@Iz Test current IZT V Ω %/℃ mA Working voltage Partnumber Marking code min max typ max min max Reverse current at reverse voltage IR VR µA V max BZD27C3V6P D0 3.4 3.8 4 8 -0.14 -0.04 100 100 1 BZD27C3V9P D1 3.7 4.1 4 8 -0.14 -0.04 100 50 1 BZD27C4V3P D2 4 4.6 4 7 -0.12 -0.02 100 25 1 BZD27C4V7P D3 4.4 5 3 7 -0.1 0 100 10 1 BZD27C5V1P D4 4.8 5.4 3 6 -0.08 0.02 100 5 1 BZD27C5V6P D5 5.2 6 2 4 -0.04 0.04 100 10 2 BZD27C6V2P D6 5.8 6.6 2 3 -0.01 0.06 100 5 2 BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3 BZD27C7V5P D8 7 7.9 1 2 0 0.07 100 50 3 BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3 BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5 BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 4.0 8.2 BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 3.0 9.1 BZD27C13P E4 12.4 14.1 5 10 0.05 0.1 50 2 10 BZD27C15P E5 13.8 15.6 5 10 0.05 0.1 50 1 11 BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12 BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13 BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16 BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18 BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20 BZD27C30P F2 28 32 8 15 0.06 0.11 25 1 22 BZD27C33P F3 31 35 8 15 0.06 0.11 25 1 24 BZD27C36P F4 34 38 21 40 0.06 0.11 10 1 27 BZD27C39P F5 37 41 21 40 0.06 0.11 10 1 30 BZD27C43P F6 40 46 24 45 0.07 0.12 10 1 33 BZD27C47P F7 44 50 24 45 0.07 0.12 10 1 36 BZD27C51P F8 48 54 25 60 0.07 0.12 10 1 39 BZD27C56P F9 52 60 25 60 0.07 0.12 10 1 43 BZD27C62P G0 58 66 25 80 0.08 0.13 10 1 47 BZD27C68P G1 64 72 25 80 0.08 0.13 10 1 51 BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56 BZD27C82P G3 77 87 30 100 0.08 0.13 10 1 62 BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68 BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75 BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82 BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91 BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100 BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110 BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120 BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130 BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150 Note:1.Pulse test:tp≤5ms. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:[email protected] BZD27C Series Voltage Regulator Diodes ELECTRICAL CHARACTERISTICS (at T =25℃ unless otherwise noted) J When used as protection diodes Partnumber Marking code Rev.Breakdown voltage Test current Temperature coefficient V(BR)R@Itest Itest αz@Itest VC V mA %/℃ V min Reverse current at stand-off voltage Clamping voltage min max max @IRSM1) A IR @Vwm µA V max BZD27C7V5P J8 7 100 0 0.07 11.3 13.3 1500 6.2 BZD27C8V2P J9 7.7 100 0.03 0.08 12.3 12.2 1200 6.8 BZD27C9V1P K0 8.5 50 0.03 0.08 13.3 11.3 100 7.5 BZD27C10P K1 9.4 50 0.05 0.09 14.8 10.1 20 8.2 BZD27C11P K2 10.4 50 0.05 0.1 15.7 9.6 5 9.1 BZD27C12P K3 11.4 50 0.05 0.1 17 8.8 5 10.0 BZD27C13P K4 12.4 50 0.05 0.1 18.9 7.9 5 11 BZD27C15P K5 13.8 50 0.05 0.1 20.9 7.2 5 12 BZD27C16P K6 15.3 25 0.06 0.11 22.9 6.6 5 13 BZD27C18P K7 16.8 25 0.06 0.11 25.6 5.9 5 15 BZD27C20P K8 18.8 25 0.06 0.11 28.4 5.3 5 16 BZD27C22P K9 20.8 25 0.06 0.11 31 4.8 5 18 BZD27C24P L0 22.8 25 0.06 0.11 33.8 4.4 5 20 BZD27C27P L1 25.1 25 0.06 0.11 38.1 3.9 5 22 BZD27C30P L2 28 25 0.06 0.11 42.2 3.6 5 24 BZD27C33P L3 31 25 0.06 0.11 46.2 3.2 5 27 BZD27C36P L4 34 10 0.06 0.11 50.1 3 5 30 BZD27C39P L5 37 10 0.06 0.11 54.1 2.8 5 33 BZD27C43P L6 40 10 0.07 0.12 60.7 2.5 5 36 BZD27C47P L7 44 10 0.07 0.12 65.5 2.3 5 39 BZD27C51P L8 48 10 0.07 0.12 70.8 2.1 5 43 BZD27C56P L9 52 10 0.07 0.12 78.6 1.9 5 47 BZD27C62P M0 58 10 0.08 0.13 86.5 1.7 5 51 BZD27C68P M1 64 10 0.08 0.13 94.4 1.6 5 56 BZD27C75P M2 70 10 0.08 0.13 103.5 1.5 5 62 BZD27C82P M3 77 10 0.08 0.13 114 1.3 5 68 BZD27C91P M4 85 5 0.09 0.13 126 1.2 5 75 BZD27C100P M5 94 5 0.09 0.13 139 1.1 5 82 BZD27C110P M6 104 5 0.09 0.13 139 0.72 5 91 BZD27C120P M7 114 5 0.09 0.13 152 0.65 5 100 BZD27C130P M8 124 5 0.09 0.13 169 0.59 5 110 BZD27C150P M9 138 5 0.09 0.13 187 0.53 5 120 BZD27C160P N1 153 5 0.09 0.13 205 0.48 5 130 BZD27C180P N2 168 5 0.09 0.13 229 0.43 5 150 BZD27C200P N3 188 5 0.09 0.13 254 0.39 5 160 Note:1)Non-repetitive peak reverse current in accordance with"IEC 60-1,Section 8"(10/1000µs pulse);see Fig.4. ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:[email protected] BZD27C Series Voltage Regulator Diodes Ratings AND Charactieristic Curves Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage Figure 1. Forward Current vs. Forward Voltage 10.00 160 Typ. VF PRSM–Max. Pulse Power Dissipation ( W ) I F – Forward Current ( A ) 140 Max. VF 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 120 100 80 60 40 20 0 0 25 VF – Forward Voltage ( V ) 75 100 125 150 175 200 V Znom – Zener Voltage ( V ) Figure 3. Typ. Diode Capacitance vs. Reverse Voltage C D – Typ. Junction Capacitance ( pF ) 50 Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition 10000 C5V1P C6V8P C12P IRSM (%) 100 90 C18P 1000 t1 = 10 µs t2 = 1000 µ s 50 100 C27P C51P 10 C200P 10 0.0 0.5 1.0 1.5 2.0 2.5 VR – Reverse Voltage (V) t t1 3.0 t2 Figure 5. Power Dissipation vs. Ambient Temperature Ptot –Power Dissipation ( W ) 3.0 tie point temperature 2.5 2.0 1.5 ambient temperature 1.0 0.5 0.0 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:[email protected]