MJD45H11 PNP Epitaxial Silicon Transistor Applications • General Purpose Power and Switching Such as Output or Driver Stages in Applications • D-PAK for Surface Mount Applications Features • • • • • Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK: “-I” Suffix) Electrically Similar to Popular MJE45H Fast Switching Speeds Low Collector Emitter Saturation Voltage Absolute Maximum Ratings D-PAK 1 1.Base 2.Collector I-PAK 3.Emitter TA = 25°C unless otherwise noted Parameter Symbol 1 Value Units VCEO Collector-Emitter Voltage - 80 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -8 A ICP Collector Current (Pulse) - 16 A PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (TA=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to +150 °C Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0 ICEO Collector Cut-off Current VCE = - 80V, IB = 0 - 80 - 10 µA V IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 50 µA hFE *DC Current Gain VCE = - 1V, IC = - 2A VCE = - 1V, IC = - 4A VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A -1 V VBE(on) *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A - 1.5 V fT 60 40 Current Gain Bandwidth Product VCE= - 10A, IC = - 0.5A 40 MHz Cob Collector Capacitance VCB = - 10V, f = 1MHz 230 pF tON Turn On Time 135 ns tSTG Storage Time 500 ns 100 ns tF Fall Time IC = - 5A IB1= - IB2 = - 0.5A * Pulse Test: PW≤300µs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation MJD45H11 Rev. C3 www.fairchildsemi.com 1 MJD45H11 — PNP Epitaxial Silicon Transistor April 2010 1000 -100 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = -1V 100 10 1 -0.01 -0.1 -1 ICP(max) IC(max) -0.1 -1 IC[A], COLLECTOR CURRENT -1000 4 20 PC[W], POWER DISSIPATION PC[W], POWER DISSIPATION -100 Figure 2. Safe Operating Area 25 15 10 5 3 2 1 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 o o TA[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 3. Power Derating vs TC Figure 4. Power Derating vs TA © 2010 Fairchild Semiconductor Corporation MJD45H11 Rev. C3 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC current Gain 0 1m s 5m s DC -1 -0.01 -10 10 0µ s 50 0µ s -10 www.fairchildsemi.com 2 MJD45H11 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics MJD45H11 — PNP Epitaxial Silicon Transistor Physical Dimension D-PAK 0.50 ±0.10 MIN0.55 0.91 ±0.10 6.10 ±0.20 2.30 ±0.10 0.76 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30TYP [2.30±0.20] (2XR0.25) (1.00) (0.90) (3.05) 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 6.60 ±0.20 (5.34) (5.04) (1.50) (0.70) 2.30 ±0.20 (0.10) 2.30TYP [2.30±0.20] (0.50) 0.89 ±0.10 MAX0.96 (4.34) 2.70 ±0.20 0.80 ±0.20 0.60 ±0.20 (0.50) 9.50 ±0.30 5.34 ±0.30 0.70 ±0.20 6.60 ±0.20 0.76 ±0.10 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation MJD45H11 Rev. C3 www.fairchildsemi.com 3 MJD45H11 — PNP Epitaxial Silicon Transistor Physical Dimension (Continued) I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 0.50 ±0.10 ±0.20 6.10 ±0.20 (0.50) 0.70 (4.34) 0.76 ±0.10 2.30TYP [2.30±0.20] ±0.30 16.10 ±0.20 ±0.30 9.30 MAX0.96 1.80 0.80 ±0.10 0.60 ±0.20 (0.50) 0.50 ±0.10 2.30TYP [2.30±0.20] Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation MJD45H11 Rev. C3 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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