PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL (Polarization Dependence Loss) InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. Features Applications l Low PDL (Polarization Dependence Loss) l Low noise, low dark current l Large active area l Various active area sizes available l Laser monitor l Optical power meter l Laser diode life test ■ Specifications / Absolute maximum ratings Type No. G8370-81 G8370-82 G8370-83 G8370-85 Dimensional outline/ Window material *1 Package ➀/K TO-18 ➁/K TO-5 ➂/K TO-8 Active area (mm) φ1 φ2 φ3 φ5 Reverse voltage VR Max. (V) 5 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) 2 -40 to +85 -55 to +125 1 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. Peak Spectral sensitivity response wavelength range λp Photo sensitivity S Dark current ID VR=1 V C ut-off Terminal frequency Shunt capacitance fc resistance Ct VR=1 V Rsh VR=1 V R L = 50 Ω V R =10 mV f=1 M H z -3 dB PDL λ=λp D∗ λ=λp 1.3 µm λ=λp Min. Typ. Min. Typ. Typ. Max. Typ. Max. (µm) (µm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) (MHz) (pF) (MΩ) (mdB) (mdB) (cm· Hz 1/2 /W) G8370-81 1 5 35 90 100 4 550 G8370-82 5 25 25 5 10 5 × 1012 0.9 to 1.7 1.55 0.8 0.9 0.85 1.1 2 1000 G8370-83 15 75 10 0.6 3500 3 G8370-85 25 *2 125 * 2 *1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak) *2: VR=0.1 V NEP λ=λp (W/Hz1/2) 2 × 10-14 4 × 10-14 6 × 10-14 1 × 10-13 1 InGaAs PIN photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic (Typ. Ta=25 ˚C) 1.0 0.8 0.6 0.4 0.2 0.8 1.0 1.2 1.4 1.6 1.8 (Typ. Ta=25 ˚C) 2 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1.2 0 0.6 G8370-81/-82/-83/-85 1 0 -1 0.8 2.0 WAVELENGTH (µm) 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (µm) KIRDB0374EA ■ Photo sensitivity linearity 100 (Typ. Ta=25 ˚C, f=1 MHz) 10 nF 98 G8370-82 96 G8370-83 94 G8370-85 1 nF G8370-82 100 pF G8370-81 10 pF 92 90 0 2 6 4 8 10 12 14 1 pF 0.01 16 INCIDENT LIGHT LEVEL (mW) ■ Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 10 GΩ G8370-81 1 GΩ G8370-82 100 MΩ G8370-83 10 MΩ G8370-85 1 MΩ 100 kΩ -40 -20 0 20 40 60 80 0.1 1 10 100 REVERSE VOLTAGE (V) KIRDB0298EA SHUNT RESISTANCE G8370-83 G8370-85 G8370-81 TERMINAL CAPACITANCE RELATIVE SENSITIVITY (%) ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V) 102 100 AMBIENT TEMPERATURE (˚C) KIRDB0300EA 2 KIRDB0042EA KIRDB0299EA InGaAs PIN photodiode G8370-81/-82/-83/-85 ■ Dimensional outlines (unit: mm) ➀ G8370-81 ➁ G8370-82/-83 5.4 ± 0.2 9.2 ± 0.2 4.7 ± 0.1 2.5 ± 0.2 4.9 ± 0.2 0.45 LEAD 2.5 ± 0.2 0.45 LEAD 18 MIN. PHOTOSENSITIVE SURFACE 0.4 MAX. WINDOW 4.5 MIN. 13 MIN. PHOTOSENSITIVE SURFACE 3.7 ± 0.2 8.3 ± 0.1 2.6 ± 0.2 WINDOW 2.2 MIN. 5.1 ± 0.3 1.5 MAX. CASE CASE KIRDB0189EA KIRDA0155EB ➂ G8370-85 13.8 ± 0.2 0.45 LEAD 14 MIN. 2.8 ± 0.2 0.5 PHOTOSENSITIVE SURFACE 4.9 ± 0.2 12.4 ± 0.1 WINDOW 7.0 MIN. 7.5 ± 0.2 INDEX MARK 1.0 CASE KIRDA0052EC Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1064E04 May 2006 DN 3