AP10TN135K
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
100V
RDS(ON)
135mΩ
ID
G
▼ Halogen Free & RoHS Compliant Product
BVDSS
3A
S
Description
AP10TN135 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-223 package is designed for suface mount application,
larger heatsink than SO-8 and SOT package.
D
S
D
SOT-223
G
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
3
Drain Current , VGS @ 10V
3
A
ID@TA=70℃
3
Drain Current , VGS @ 10V
2.4
A
12
A
2.78
W
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Units
Maximum Thermal Resistance, Junction-ambient3
45
℃/W
Data and specifications subject to change without notice
1
201503171
AP10TN135K
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
100
-
-
V
VGS=10V, ID=3A
-
115
135
mΩ
VGS=4.5V, ID=2A
-
122
145
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.7
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
12
20
nC
Qgs
Gate-Source Charge
VDS=80V
-
2.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=10V
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=25V
Crss
Rg
-
40
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
25
-
pF
Gate Resistance
f=1.0MHz
-
2.2
4.4
Ω
Min.
Typ.
IS=2A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
23
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10TN135K
10
12
T A = 25 o C
10V
8.0V
6.0V
5.0V
4.0V
10
ID , Drain Current (A)
8
ID , Drain Current (A)
T A = 150 o C
10V
8.0V
6.0V
5.0V
4.0V
6
V G = 3.0V
4
8
V G = 3.0V
6
4
2
2
0
0
0
2
4
6
0
8
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
126
2.4
I D =3A
V G =10V
I D =2A
o
T A =25 C
118
.
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
122
1.6
1.2
114
0.8
0.4
110
2
4
6
8
10
-100
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
I D =250uA
Normalized VGS(th)
2.5
IS(A)
2
T j =150 o C
T j =25 o C
1.5
1.2
0.8
1
0.4
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10TN135K
ID=3A
V DS =80V
10
1000
8
800
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
12
6
4
400
2
200
0
0
0
4
8
12
C iss
600
16
C oss
C rss
0
20
Q G , Total Gate Charge (nC)
40
60
80
100
120
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
Operation in this area
limited by RDS(ON)
100us
1
.
1ms
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
1000
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
10
100
1000
Fig 10. Effective Transient Thermal Impedance
20
5
o
T j =25 C
V DS =5V
4
ID , Drain Current (A)
16
ID , Drain Current (A)
0.1
t , Pulse Width (s)
T j =150 o C
12
8
3
2
1
4
0
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Drain Current v.s. Ambient Temperature
4
AP10TN135K
2
3.2
I D =1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
2.4
1.6
0.8
0.4
0
0
-100
-50
T
0
50
100
0
150
o
j
50
100
150
o
, Junction Temperature ( C)
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
200
T j =25 o C
RDS(ON) (mΩ)
180
160
4.5V
140
.
V GS =10V
120
100
0
3
6
9
12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP10TN135K
MARKING INFORMATION
Part Number
10TN135
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6