Silikron BAT54H Schottky barrier diode Datasheet

Production specification
Schottky Barrier Diode
BAT54H
FEATURES
z Pb
Low Forward voltage — 0.35Volts(Typ.).
Lead-free
@IF=10mA.
z Extremely fast switching speed.
z Ultra-small surface mount package.
z PN junction guard ring for transient and ESD protection.
SOD-323
APPLICATIONS
z Schottky barrier detector and switching diodes.
ORDERING INFORMATION
Type No.
Marking
BAT54H
Package Code
JV
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
30
V
Forward continuous Current
IF
200
mA
Repetitive peak Forward Current
IFRM
300
mA
IFSM
600
mA
Power Dissipation
Pd
200
mW
Thermal resistance,junction to ambient air
RθjA
635
℃/W
Junction temperature
Tj
150
℃
Storage temperature range
Tstg
-65-150
℃
Forward Surge Current
@t<1.0s
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Silikron Semiconductor CO.,LTD.
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v1.0
Production specification
Schottky Barrier Diode
BAT54H
Parameter
Symbol
Conditions
Min.
Reverse Breakdown Voltage
V(BR)R
IR=10μA
30
VF1
IF=0.1mA
0.22
0.24
V
VF2
IF=1.0mA
0.29
0.32
V
VF3
IF=10mA
0.35
0.40
V
VF4
IF=30mA
0.41
0.5
V
VF5
IF=100mA
0.52
0.8
V
Reverse leakage current
IR
VR=25V
0.5
2.0
μA
Reverse recovery time
trr
IF=10mA,IR=1.0mA
5.0
ns
Total capacitance
CT
VR=1.0V,f=1.0MHz
10
pF
Forward voltage
Typ.
Max.
Unit
V
7.6
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Silikron Semiconductor CO.,LTD.
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v1.0m Production specification
Schottky Barrier Diode
BAT54H
PACKAGE OUTLINE
Plastic surface mounted package
SOD-323
SOD-323
K
B
C
A
D
J
Dim
Min
Max
A
1.275
1.325
B
1.675
1.725
C
E
H
0.9 Typical
D
0.25
0.35
E
0.27
0.37
H
0.02
0.1
J
K
0.1 Typical
2.6
2.7
All Dimensions in mm
SOLDERING FOOTPRINT Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
BAT54H
SOD-323
3000/Tape&Reel
Silikron Semiconductor CO.,LTD.
3
http://www.silikron.com
v1.0
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