BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 3.5±0.2 4.55±0.2 14.3±0.2 4.5±0.2 Power Dissipation: PCM: 0.83 mW (Tamb=25oC) 0.43+0.08 –0.07 0.46+0.1 –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Collector 1 2 3 3: Base 2.54±0.1 o MAXIMUM RATINGS (TA=25 C unless otherwise specified) PARAMETERS Collector - Emitter Voltage Collector - Base Voltage SYMBOLS VALUES UNIT VCEO BC636 -45 V BC638 -60 V BC640 -80 V -45 V -60 V VCBO BC636 BC638 -100 V VEBO -5 V IC ICP IB -1 -1.5 A TJ,TSTG 150, -65 ~ 150 RθJA* 150 BC640 Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Thermal Resistance from Junction to Ambient A mA 100 o C K/w o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise specified) PARAMETERS SYMBOL TEST CONDITIONS IC=10mA, IB=0 Collector - emitter breakdown voltage MIN BC638 BC640 Collector cut-off current I CBO VCB=-30V, IE=0 Emitter cut-off current I EBO hFE(1) VEB=-5V, IB=0 VCE=-2V, IC=-5mA hFE(2) VCE=-2V, IC=-150mA BC636-10 DC current gain BC636-16, BC638-16, BC640-16 hFE(3) Collector - emitter saturation voltage Base - emitter voltage Transition frequency VCE(sat) VBE(ON) fT VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA VCE=-5V, IC=-50mA, f=100MHz MAX UNIT -0.1 -0.1 V V V µA µA -45 -60 -80 BC636 V(BR)CEO TYP 40 63 100 25 160 250 -0.5 -1 100 V V MHz CLASSIFICATION OF h FE(2) RANK BC636-10 BC636-16, BC638-16, BC640-16 RANGE 63-160 100-250 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BC636/638/640 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individu Page 2of 2