MKP3V120, MKP3V240 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on–state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: • High Pressure Sodium Vapor Lighting • Strobes and Flashers • Ignitors • High Voltage Regulators • Pulse Generators • Used to Trigger Gates of SCR’s and Triacs • Indicates UL Registered — File #E116110 • Device Marking: Logo, Device Type, e.g., MKP3V120, Date Code http://onsemi.com SIDACS ( ) 1 AMPERE RMS 120 and 240 VOLTS MT1 MT2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off–State Voltage (Sine Wave, 50 to 60 Hz, TJ = – 40 to 125°C) MKP3V120 MKP3V240 VDRM, VRRM On-State RMS Current (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) Peak Non–Repetitive Surge Current (60 Hz One Cycle Sine Wave, Peak Value, TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Value Unit Volts IT(RMS) "90 "180 "1.0 Amp ITSM "20 Amps TJ – 40 to +125 °C Tstg – 40 to +150 °C SURMETIC 50 PLASTIC AXIAL (No Polarity) CASE 267 STYLE 2 ORDERING INFORMATION Device Package Shipping SURMETIC 50 Bulk 500/Bag MKP3V120RL SURMETIC 50 Tape and Reel 1.5K/Reel MKP3V240 SURMETIC 50 Bulk 500/Bag MKP3V240RL SURMETIC 50 Tape and Reel 1.5K/Reel MKP3V120 Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 3 1 Publication Order Number: MKP3V120/D MKP3V120, MKP3V240 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJL 15 °C/W TL 260 °C Thermal Resistance, Junction to Lead (Lead Length = 3/8″) Lead Solder Temperature (Lead Length 1/16″ from Case, 10 s Max) w ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM — — 10 µA 110 220 — — 130 250 OFF CHARACTERISTICS Repetitive Peak Off–State Current (50 to 60 Hz Sine Wave) VDRM = 90 V VDRM = 180 V MKP3V120 MKP3V240 ON CHARACTERISTICS Breakover Voltage, IBO = 200 µA VBO MKP3V120 MKP3V240 Volts Breakover Current IBO — — 200 µA Peak On–State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%) VTM — 1.1 1.5 Volts Dynamic Holding Current (Sine Wave, 60 Hz, RL = 100 Ω) IH — — 100 mA Switching Resistance (Sine Wave, 50 to 60 Hz) RS 0.1 — — kΩ di/dt — 120 — A/µs DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of On–State Current, Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 µsec) http://onsemi.com 2 MKP3V120, MKP3V240 Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol IDRM VDRM ITM Parameter VTM Slope = RS IH Off State Leakage Current Off State Repetitive Blocking Voltage VBO IBO Breakover Voltage IH VTM Holding Current On State Voltage ITM Peak on State Current IS VS IDRM Breakover Current I(BO) + Voltage VDRM RS + (V(I (BO) S V(BO) – V S) – I (BO)) CURRENT DERATING TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) 130 120 α α = Conduction Angle TJ Rated = 125°C 110 90 a = 180° 80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 α = Conduction Angle TJ Rated = 125°C 120 100 80 a = 180° 60 40 20 0 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS) I T , INSTANTANEOUS ON–STATE CURRENT (AMPS) 100 α 140 1.0 1.25 25°C 0.8 125°C a = 180° 1.00 0.6 0.4 α α = Conduction Angle TJ Rated = 125°C 0.75 0.3 2.0 0.50 0.2 0.25 0.1 0.8 0.9 1.0 1.1 1.2 1.3 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) 0 Figure 3. Typical Forward Voltage 0.2 0.4 0.6 0.8 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 4. Typical Power Dissipation http://onsemi.com 3 1.0 MKP3V120, MKP3V240 THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.5 0.3 0.2 0.1 0.05 LEAD LENGTH = 1/4″ The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady–state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 0.03 0.02 TJ = TL + DTJL 0.01 0.2 0.5 1.0 2.0 5.0 20 10 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k t, TIME (ms) Figure 5. Thermal Response TYPICAL CHARACTERISTICS 225 80 200 IH , HOLDING CURRENT (mA) 250 90 I(BO) , BREAKOVER CURRENT ( mA) 100 70 60 50 40 30 20 10 0 –60 175 150 125 100 75 50 25 –40 –20 0 20 40 60 80 100 120 0 –60 140 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Current Figure 7. Typical Holding Current http://onsemi.com 4 120 140 MKP3V120, MKP3V240 PACKAGE DIMENSIONS SURMETIC 50 PLASTIC AXIAL (No Polarity) CASE 267–03 ISSUE D K A D 1 B 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K K INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 ––– STYLE 2: NO POLARITY http://onsemi.com 5 MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 ––– MKP3V120, MKP3V240 Notes http://onsemi.com 6 MKP3V120, MKP3V240 Notes http://onsemi.com 7 MKP3V120, MKP3V240 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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