IXYS IXGX50N60AU1S Hiperfast igbt with diode Datasheet

Preliminary data
HiPerFASTTM
IGBT with Diode
IXGX50N60AU1
IXGX50N60AU1S
Combi Pack
VCES
IC25
VCE(sat)
tfi
= 600 V
= 75 A
= 2.7 V
= 275 ns
TO-247 Hole-less SMD
(50N60AU1S)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C, limited by leads
75
A
I C90
TC = 90°C
50
A
I CM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 30 µH
ICM = 100
@ 0.8 VCES
A
PC
TC = 25°C
300
W
-55 ... +150
°C
150
°C
TJ
TJM
Tstg
-55 ... +150
°C
6
g
300
°C
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
C (TAB)
G
E
TO-247 Hole-less
(50N60AU1)
C (TAB)
G
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
l
l
l
l
l
Hole-less TO-247 for clip mount
High current capability
High frequency IGBT and antiparallel FRED in one package
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
l
l
l
BVCES
IC
= 500 µA, VGE = 0 V
600
VGE(th)
IC
= 500 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
V
l
l
TJ = 25°C
TJ = 125°C
5.5
V
250
15
µA
mA
±100
nA
l
2.7
V
l
Advantages
l
© 1997 IXYS All rights reserved
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
97513 (5/97)
IXGX50N60AU1
Symbol
Test Conditions
gfs
I C = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
25
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
IXGX50N60AU1S
Inductive load, T J = 25°°C
IC = IC90 , VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
35
S
200
nC
50
nC
80
nC
50
ns
210
ns
200
ns
275
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 V CES, RG = Roff = 2.7 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
400
ns
4.8
mJ
50
ns
240
ns
3
mJ
280
ns
600
ns
9.6
mJ
RthJC
TO-247 HOLE-LESS
0.42 K/W
0.15
RthCK
K/W
TO-247 HOLE-LESS SMD
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90, VGE = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I RM
trr
IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
19
175
35
RthJC
1.7
V
33
A
ns
ns
50
0.75 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGX50N60AU1
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
350
80
VGE = 15V
T J = 25°C
70
300
IC - Amperes
60
IC - Amperes
IXGX50N60AU1S
VGE = 15V
50
13V
11V
9V
7V
5V
40
30
20
150
0
3
7V
100
0
2
9V
200
50
1
4
5
5V
0
2
4
6
VCE - Volts
10 12 14 16 18 20
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
10
T J = 25°C
9
1.4
VCE(sat) - Normalized
8
7
VCE - Volts
8
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
6
5
4
3
IC = 40A
2
1
4
5
6
7
8
IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
IC = 20A
0
0.7
-50
9 10 11 12 13 14 15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
80
VCE = 100V
VGE(th) @ 250µA
BV / VCE(sat) - Normalized
70
60
IC - Amperes
T J = 25°C
250
10
0
13V
11V
50
40
30
20
TJ = 25°C
10
1.1
1.0
0.9
BVCES @ 3mA
0.8
0.7
0.6
T J = 125°C
0
0
1
2
3
4
5
6
VGE - Volts
© 1997 IXYS All rights reserved
7
8
9
10
0.5
-50
-25
0
25
50
75
TJ - Degrees C
100 125 150
IXGX50N60AU1
Fig.7 Gate Charge
15
IXGX50N60AU1S
Fig.8 Turn-Off Safe Operating Area
100
IC = 40A
VCE = 500V
10
IC - Amperes
VGE - Volts
12
9
6
TJ = 125°C
dV/dt < 3V/ns
1
0.1
3
0.01
0
0
50
100
150
200
250
0
100
200
Total Gate Charge - (nC)
Fig.9
300
400
500
600
700
VCE - Volts
Capacitance Curves
4500
Capacitance - pF
4000
Cies
3500
3000
2500
2000
= IXGK 50N60AU1
1500
Coes
1000
Cres
500
0
0
5
10
15
20
25
VCE - Volts
Fig.10
Transient Thermal Impedance
1
ZthJC (K/W)
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGX50N60AU1
© 1997 IXYS All rights reserved
IXGX50N60AU1S
IXGX50N60AU1
IXGX50N60AU1S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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