BC807-16W/25W/40W
PNP SILICON GENERAL PURPOSE TRANSISTORS
SOT-323
Features
•
•
•
•
•
•
•
A
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 0.2Watts of Power Dissipation.
Collector-current 0.5A
O
O
Operating and storage junction temperature range: -55 C to +150 C
Halogen free available upon request by adding suffix "-HF"
D
C
B
F
E
B
E
H
G
Mechanical Data
•
•
•
C
J
K
Case: SOT-323 Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.005 grams (approx.)
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
NOTE
Maximum Ratings TA = 25C unless otherwise specified
Parameter
Min
Symbol
Units
Max
VCBO
−
−50
V
collector-emitter voltage open base; IC = −10 mA
VCEO
−
−45
V
emitter-base voltage
collector-base voltage
open emitter
VEBO
−
−5
V
collector current (DC)
IC
−
−500
mA
peak collector current
ICM
−
−1
A
open collector
IBM
−
−200
mA
Ptot
−
200
mW
storage temperature
Tstg
−65
+150
°C
junction temperature
Tj
−
150
°C
operating ambient temperature
Tamb
−65
+150
°C
peak base current
total power dissipation
Tamb ≤ 25 °C; note 1
Maximum Ratings and Electrical Characteristics
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Symbol
Min
Max
Units
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE =1.0uAdc, IC=0)
Collector Cutoff Current
(VCB=20Vdc,IE =0)
V (BR)CEO
45
---
Vdc
V (BR)CBO
50
---
Vdc
V (BR)EBO
5.0
ICBO
---
0.1
uAdc
Collector Cutoff Current
(VCE=20V dc,IB =0)
Emitter Cutoff Current
(VEB =5.0Vdc, IC=0)
ICEO
---
0.2
uAdc
IEBO
---
0.1
uAdc
DC Current Gain
(IC=100mAdc, V CE=1.0Vdc)
BC807-16W
BC807-25W
BC807-40W
DC Current Gain
(IC=500mAdc, V CE=1.0Vdc)
hFE(1)
100
160
250
250
400
600
-------
40
---
---
---
0.7
Vdc
---
Vdc
hFE(2)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
V CE(sat)
Base-Emitter Voltage
(IC=500mAdc,VCE=1Vdc)
V BE(on)
---
1.2
Vdc
fT
80
---
MHz
10
pF
Current-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, I C=10mA)
Collector output capacitance
(VCB=10V, f=1MHz)
Cob