APTGT150DU120G Dual common source Fast Trench + Field Stop IGBT® Power Module C2 Q2 G2 E1 E2 E G1 C1 E C2 E1 E2 G2 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 220 150 350 ±20 690 Tj = 125°C 300A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2006 Q1 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150DU120G – Rev 1 C1 VCES = 1200V IC = 150A @ Tc = 80°C APTGT150DU120G All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 150A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A R G = 2.2Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 2.2Ω Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy 1.7 2.0 5.8 Typ 10.7 0.56 0.48 280 40 420 Max Unit 350 2.1 µA 6.5 400 V nA Max Unit nF ns 290 45 520 ns 90 14 mJ 16 Typ Max 1200 Tj = 25°C Tj = 125°C IF = 150A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 150 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 14 Tj = 125°C Tj = 25°C Tj = 125°C 28 6 11 di/dt =2500A/µs www.microsemi.com Unit V VR=1200V IF = 150A VR = 600V V 75 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Typ 250 600 µA A 2.1 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT150DU120G – Rev 1 Electrical Characteristics APTGT150DU120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.18 0.30 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150DU120G – Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTGT150DU120G Typical Performance Curve Output Characteristics (VGE=15V) 300 Output Characteristics 300 TJ = 125°C 250 T J=25°C 150 VGE =15V 150 100 100 50 50 V GE=9V 0 0 1 2 VCE (V) 3 0 4 1 2 V CE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 300 32 T J=25°C 250 24 E (mJ) 150 100 T J=125°C 20 Er 8 0 0 7 8 9 VGE (V) 10 11 0 12 26 22 150 200 250 300 Reverse Bias Safe Operating Area Eon 300 250 IC (A) Eoff 18 14 100 350 VCE = 600V VGE =15V IC = 150A TJ = 125°C 30 50 IC (A) Switching Energy Losses vs Gate Resistance 34 Eon 12 4 6 Eoff 16 50 5 V CE = 600V V GE = 15V RG = 2.2Ω T J = 125°C 28 T J=125°C 200 E (mJ) V GE=13V 200 0 IC (A) VGE =17V TJ=125°C 200 IC (A) IC (A) 250 200 150 V GE=15V T J=125°C RG=2.2Ω Eon 100 Er 10 50 6 2 0 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18 0 400 800 V CE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 0.16 July, 2006 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT150DU120G – Rev 1 Thermal Impedance (°C/W) 0.2 APTGT150DU120G Forward Characteristic of diode 300 VCE =600V D=50% RG=2.2Ω T J=125°C T c=75°C 50 40 ZVS 30 T J=25°C 250 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZCS T J=125°C 150 100 20 10 0 0 40 TJ =125°C 50 Hard switching 0 80 120 160 200 0 240 0.4 IC (A) 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.25 0.9 Diode 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150DU120G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)