Diodes DMN2075U-7 N-channel enhancement mode mosfet Datasheet

DMN2075U
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
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Features
Mechanical Data
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
Maximum Ratings
S
G
Source
Internal Schematic
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Units
V
V
IDM
Value
20
±8
4.2
3.4
27
Symbol
PD
RθJA
TJ, TSTG
Value
0.8
156
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 4)
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMN2075U
Document number: DS31837 Rev. 3 - 2
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December 2009
© Diodes Incorporated
DMN2075U
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.4
-
1.0
V
RDS (ON)
-
25
30
38
45
mΩ
|Yfs|
VSD
-
13
0.75
1.0
S
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
VDS = 5V, ID = 3.6A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 3.6A
VDD = 10V, VGS = 4.5V,
RL = 2.78Ω, RG = 1.0Ω
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
10
10
VGS = 8.0V
VGS = 4.5V
VGS = 3.0V
8
VDS = 5V
8
VGS = 2.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics
VGS = 2.0V
VGS = 1.5V
6
4
2
6
4
TA = 150°C
TA = 125°C
2
TA = 85°C
VGS = 1.2V
0
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMN2075U
Document number: DS31837 Rev. 3 - 2
3
TA = 25°C
TA = -55°C
0
0.5
1
1.5
VGS, GATE SOURCE VOLTAGE (V)
2
Fig. 2 Typical Transfer Characteristics
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December 2009
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.06
0.055
0.05
0.045
0.04
VGS = 1.8V
0.035
0.03
VGS = 2.5V
0.025
VGS = 4.5V
0.02
0.1
1
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.4
VGS = 2.5V
ID = 5A
VGS = 4.5V
ID = 10A
1.0
0.055
0.8
0.6
-50
VGS = 4.5V
0.05
0.045
TA = 150°C
0.04
T A = 125°C
0.035
TA = 85°C
0.03
T A = 25°C
0.025
0.02
T A = -55°C
0.015
0.01
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.2
0.06
10
1.8
2
4
6
8
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.06
0.05
VGS = 2.5V
ID = 5A
0.04
0.03
VGS = 4.5V
ID = 10A
0.02
0.01
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.4
10
1.2
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
DMN2075U
1.0
0.8
0.6
ID = 1mA
ID = 250µA
0.4
8
6
T A = 25°C
4
2
0.2
0
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN2075U
Document number: DS31837 Rev. 3 - 2
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0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
December 2009
© Diodes Incorporated
DMN2075U
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1,000
NEW PRODUCT
C, CAPACITANCE (pF)
Ciss
100
Coss
Crss
f = 1MHz
10
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
10,000
TA = 150°C
1,000
TA = 125°C
100
10
T A = 85°C
1
T A = 25°C
T A = -55°C
0.1
0
20
2
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 157°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = Single Pulse
0.001
0.00001
0.0001
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 /t2
D = 0.005
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 11 Transient Thermal Response
Ordering Information
(Note 7)
Part Number
DMN2075U-7
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
G22
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMN2075U
Document number: DS31837 Rev. 3 - 2
Mar
3
YM
Marking Information
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
December 2009
© Diodes Incorporated
DMN2075U
Package Outline Dimensions
NEW PRODUCT
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
F
J
L
G
Suggested Pad Layout
Y
Z
C
X
DMN2075U
Document number: DS31837 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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December 2009
© Diodes Incorporated
DMN2075U
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN2075U
Document number: DS31837 Rev. 3 - 2
6 of 6
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December 2009
© Diodes Incorporated
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