GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed IGBT: tf = 0.24 μs (typ.) (IC = 40 A) • Low saturation voltage VCE (sat) =2.15 V (typ.) (IC = 40 A) • High Junction temperature Tj = 175°C (max) Unit: mm FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1500 V Gate-emitter voltage VGES ±25 V JEDEC ⎯ DC IC 40 ⎯ ICP 80 A JEITA 1ms DC IF 30 1ms IFP 80 Collector power dissipation (Tc = 25°C) PC 230 W Junction temperature Tj 175 °C Storage temperature Tstg -55 to 175 °C Collector current Diode forward current TOSHIBA A 2-16C1C Weight: 4.6 g (typ.) Note 1: Ensure that the channel temperature does not exceed 175°C during use of the device. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. 1 2009-12-04 GT40T321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 25 V, VCE = 0 ⎯ ⎯ ± 100 nA Collector cut-off current ICES VCE = 1500 V, VGE = 0 ⎯ ⎯ 1 mA IC =40 mA, VCE = 5 V 4.0 ⎯ 7.0 V IC = 5 A, VGE = 15 V ⎯ 1.25 1.90 IC = 40 A, VGE = 15 V ⎯ 2.15 2.50 VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2400 ⎯ ⎯ 0.15 ⎯ ⎯ 0.24 ⎯ ⎯ 0.24 0.40 ⎯ 0.54 ⎯ Gate-emitter cut-off voltage VGE (OFF) Collector-emitter saturation voltage VCE (sat) Input capacitance Cies tr Rise time Turn-on time Switching time See Note 3 circuit diagram. ton Fall time VCC = 600 V, IC = 40A tf Turn-off time VGG = ±15 V, RG = 51 Ω toff V pF μs Diode forward voltage VF IF = 30 A, VGE = 0 ⎯ 1.7 2.3 V Reverse recovery time trr IF = 30 A, VGE = 0, di/dt = − 20 A/μs ⎯ 0.7 ⎯ µs Thermal Resistance (IGBT) Rth(j-c) ⎯ ⎯ ⎯ 0.65 °C/W Thermal Resistance (Diode) Rth(j-c) ⎯ ⎯ ⎯ 1.25 °C/W Note 3: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 10Ω 15Ω RG IC 0 90% VCC 0 90% 10% VCE Marking 10% tf tr toff ton Equivalent Circuit Collector TOSHIBA 40T321 Gate Part No. (or abbreviation code) Lot No. Note 4 Emitter Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-04 GT40T321 IC – VCE IC – VCE 80 80 Common emitter Tc = −40°C 8.5 9 10 8.5 (A) 15 20 8 Collector current IC Collector current IC (A) 15 60 Common emitter Tc = 25°C 9 10 40 7.5 20 60 8 20 40 7.5 20 VGE = 7 V VGE = 7 V 0 0 0 1 2 3 Collector-emitter voltage 4 0 5 VCE (V) 2 1 Collector-emitter voltage IC – VCE 80 Common emitter Tc = 150°C 3 VCE (V) 80 9 Common emitter VGE = 15 V 8 (A) 150 20 Collector current IC Collector current IC (A) 15 7.5 40 VGE = 7 V 20 0 60 25 Tc=-40℃ 40 20 0 0 1 2 3 Collector-emitter voltage 4 5 0 1 2 3 Collector -emitter voltage VCE (V) VCE (sat) – Tc 5 4 5 VCE (V) IC – VGE 80 Common emitter VCE = 5 V Common emitter VGE = 15 V (A) 4 80 Collector current IC Collector-emitter saturation voltage VCE (sat) (V) 5 IC – VCE 10 60 4 60 3 40 20 2 IC =10 A 1 60 40 25 20 −40 Tc = 150°C 0 0 −75 −25 25 75 125 2 175 4 6 Gate-emitter voltage Case temperature Tc (°C) 3 8 10 VGE (V) 2009-12-04 GT40T321 VCE, VGE – QG C – VCE 20 200 100 100 0 10 VCE = 300 V 0 200 50 5 100 (pF) 15 5000 3000 500 300 Coes 100 50 30 10 1 0.1 Switching Time – IC Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 5 3 toff Switching time (μs) Switching time (μs) 1 ton 0.5 tr 0.3 tf 0.1 0.05 0.03 1 toff 0.5 tf 0.3 ton tr 0.1 0.05 0.03 0.01 0.01 1 10 100 Gate resistance RG 0 1000 20 10 (Ω) (A) Transient thermal impedance(Junction−case) rth(j−c) (°C/W) IC max (pulsed) * 100 10 μs* 50 30 100 μs* 1 ms* ICms* max 10 (continuous) 10 5 3 10 ms* DC operation 1 50 40 (A) rth (j-c) – tw *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 500 300 30 Collector current IC Safe Operating Area 1000 Collector current IC 1000 VCE (V) 10 Common emitter VCC = 600 V IC =40 A VGG = ±15 V Tc = 25°C 3 100 Collector-emitter voltage Switching Time – RG 5 10 1 Gate charge QG (nC) 10 Cres Common emitter VGE = 0 f = 1MHz Tc = 25°C 5 3 0 200 150 Cies 1000 Capacitance C 300 VGE (V) Common emitter RL = 3.75 Ω Tc = 25°C 10000 Gate-emitter voltage Collector-emitter voltage VCE (V) 400 0.5 0.3 VCE max 10 Diode stage 1 IGBT stage 10−1 10−2 Tc = 25°C 10−3 10−5 10 −4 10 −3 10 −2 10 −1 1 10 102 0.1 1 10 100 Collector-emitter voltage 1000 10000 Pulse width tw (s) VCE (V) 4 2009-12-04 GT40T321 Irr, trr – IF 25 40 125 20 Common emitter VGE = 0 3 4 Forward voltage VF 1 trr 4 0.5 20 40 60 80 100 (μs) 0 (A) 1 Common emitter IF = 30 A Tc = 25°C (A) 40 0.8 0.6 trr Irr Irr 8 Forward current IF Irr, trr – di/dt 50 Peak reverse recovery current (V) 2 1.5 12 0 5 (μs) 2 Reverse recovery time 1 16 0 0 0 Common emitter di/dt = −20 A/μs Tc = 25°C trr Irr (A) Tc = 40°C Peak reverse recovery current Forward current IF (A) 80 60 2.5 20 Reverse recovery time IF – V F 100 30 trr 0.4 20 10 0.2 Irr 0 0 0 20 40 60 80 100 120 di/dt (A/μs) 5 2009-12-04 GT40T321 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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