FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator where low conduction and switching losses are essential. • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 75A • High input impedance • Tightened Parameter Distribution Applications • RoHS compliant • Short Circuit Ruggedness > 5us @25oC E • Solar Inverter, UPS, Digital Power Generator C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF IFM(1) Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current o Ratings Units 650 V ± 20 V 150 A 75 A 225 A Diode Forward Current @ TC = 25 C 75 A Diode Forward Current @ TC = 100oC 50 A 225 A Maximum Power Dissipation @ TC = 25oC 375 W Maximum Power Dissipation @ TC = 100oC 187 W SCWT Short Circuit Withstand Time @ TC = 25oC 5 us TJ Operating Junction Temperature PD Pulsed Diode Maximum Forward Current Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds -55 to +175 o -55 to +175 oC o 300 C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction to Case - 0.40 o RθJC(Diode) Thermal Resistance, Junction to Case - 0.86 oC/W RθJA Thermal Resistance, Junction to Ambient - 40 ©2012 Fairchild Semiconductor Corporation FGH75T65UPD Rev. C0 1 o C/W C/W www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT August 2012 Device Marking Device Package FGH75T65UPD FGH75T65UPD TO-247 Eco Status Pacing Type Qty per Tube - 30ea - For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 650 - - V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA - 0.65 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA 4.0 6.0 7.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 75mA, VCE = VGE IC = 75A, VGE = 15V - 1.65 2.3 V VCE(sat) Collector to Emitter Saturation Voltage IC = 75A, VGE = 15V, TC = 175oC - 2.05 - V - 5665 - pF - 205 - pF - 100 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time - 32 42 ns tr Rise Time - 43 56 ns td(off) Turn-Off Delay Time - 166 216 ns tf Fall Time - 24 33 ns Eon Turn-On Switching Loss - 2.85 3.68 mJ Eoff Turn-Off Switching Loss - 1.20 1.60 mJ VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 25oC Ets Total Switching Loss - 4.05 5.3 mJ td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 57 - ns td(off) Turn-Off Delay Time - 176 - ns tf Fall Time - 21 - ns Eon Turn-On Switching Loss - 4.45 - mJ Eoff Turn-Off Switching Loss - 1.60 - mJ Ets Total Switching Loss - 6.05 - mJ Tsc Short Circuit Withstand Time 5 - - us FGH75T65UPD Rev. C0 VCC = 400V, IC = 75A, RG = 3Ω, VGE = 15V, Inductive Load, TC = 175oC VGE = 15V, VCC < 400V, Rg = 10 Ω 2 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Package Marking and Ordering Information Symbol Qg Parameter (Continued) Test Conditions Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400V, IC = 75A, VGE = 15V Electrical Characteristics of the Diode Symbol Parameter Min. Typ. Max Units - 385 578 nC - 45 68 nC - 210 315 nC Min. Typ. Max Units TC = 25°C unless otherwise noted Test Conditions - 2.1 2.6 TC = 175oC - 1.7 - Reverse Recovery Energy TC = 175oC - 40 - trr Diode Reverse Recovery Time TC = 25oC - 65 85 TC = 175oC - 127 - Qrr Diode Reverse Recovery Charge TC = 25oC - 120 170 - 550 - VFM Diode Forward Voltage Erec FGH75T65UPD Rev. C0 TC = 25oC IF = 50A IF =50A, dIF/dt = 200A/µs TC = 3 175oC V uJ ns nC www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Electrical Characteristics of the IGBT Figure 1. Typical Output Characteristics 225 VGE= 20V Figure 2. Typical Output Characteristics 225 VGE= 20V 15V 15V 180 135 90 10V 45 8V 0 0 180 Collector Current, IC [A] Collector Current, IC [A] 12V 12V 135 90 10V 45 8V o o TC = 25 C 2 4 6 8 Collector-Emitter Voltage, VCE [V] TC = 175 C 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 225 Common Emitter VCE = 400V Collector Current, IC [A] Collector Current, IC [A] 200 175 150 125 100 75 Common Emitter VGE = 15V 50 o 180 TC = 25 C o TC = 175 C 135 90 45 o TC = 25 C 25 o TC = 175 C 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15 Figure 6. Saturation Voltage vs. VGE 3.5 20 Common Emitter Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 10 Figure 4. Transfer Characteristics 225 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 3.0 150A 2.5 2.0 75A 1.5 IC = 40A 1.0 25 50 75 100 125 150 175 o Collector-EmitterCase Temperature, TC [ C] FGH75T65UPD Rev. C0 o TC = -40 C 16 150A 12 75A 8 IC = 40A 4 0 4 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 o TC = 25 C 16 150A 12 75A 8 IC = 40A 4 0 o TC = 175 C 16 150A 12 75A 8 IC = 40A 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 Figure 9. Capacitance Characteristics Gate-Emitter Voltage, VGE [V] 1000 Coes Common Emitter VGE = 0V, f = 1MHz 100 Cres 12 400V 200V 6 3 Common Emitter o o 1 VCC = 300V 9 TC = 25 C TC = 25 C 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 11. SOA Characteristics 0 70 140 210 280 Gate Charge, Qg [nC] 350 420 Figure 12. Turn-on Characteristics vs. Gate Resistance 1000 500 Common Emitter VCC = 400V, VGE = 15V IC = 75A 10µs 100 o TC = 25 C 100µs 1ms 10 td(on) 100 10 ms DC 1 o TC = 175 C Switching Time [ns] Collector Current, Ic [A] 20 15 Cies 50 8 12 16 Gate-Emitter Voltage, VGE [V] Figure 10. Gate charge Characteristics 10000 Capacitance [pF] Common Emitter *Notes: o 1. TC = 25 C tr o 2. TJ < 175 C 3. Single Pulse 10 0.1 1 10 100 Collector-Emitter Voltage, VCE [V] FGH75T65UPD Rev. C0 1000 5 0 10 20 30 40 Gate Resistance, RG [Ω ] 50 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 5000 td(off) 100 Switching Time [ns] Switching Time [ns] 1000 tf 100 Common Emitter VCC = 400V, VGE = 15V IC = 75A tr td(on) 10 Common Emitter VGE = 15V, RG = 3Ω o o TC = 25 C TC = 25 C o o TC = 175 C 10 0 10 TC = 175 C 20 30 40 Gate Resistance, RG [Ω ] 1 50 0 60 90 120 150 40 50 Collector Current, IC [A] Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance 1000 100 Common Emitter VCC = 400V, VGE = 15V td(off) IC = 75A 100 tf 10 o TC = 25 C Switching Loss [mJ] Switching Time [ns] 30 Common Emitter VGE = 15V, RG = 3Ω o TC = 175 C Eon 10 Eoff o TC = 25 C o TC = 175 C 1 0 30 60 90 120 1 150 0 10 Collector Current, IC [A] 20 30 Gate Resistance, RG [Ω ] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics 250 50 Collector Current, IC [A] Switching Loss [mJ] 200 10 150 Eon 100 1 Common Emitter VGE = 15V, RG = 3Ω Eoff o TC = 25 C 50 Safe Operating Area o o TC = 175 C 0.1 VGE = 15V, TC < 175 C 0 0 30 60 90 120 150 FGH75T65UPD Rev. C0 0 100 200 300 400 500 600 700 Collector-Emitter Voltage, VCE [V] Collector Current, IC [A] 6 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Typical Performance Characteristics Figure 19. Current Derating Figure 20. Load Current Vs. Frequence 180 o TC = 100 C 150 150 Collector Current, IC A] Average Forward Current, IF(AV) [A] 180 120 90 60 120 90 Duty cycle : 50% 60 o T = 100 C C Power Dissipation = 187W 30 30 VCC = 400V load Current : peak of square wave 0 0 25 50 75 100 125 150 o Case temperature, TC [ C] 175 0 1k 200 10k 100k 1M Switching Frequency, f [Hz] Figure 21. Forward Characteristics Figure 22. Reverse Recovery Current 300 11 o TC = 25 C 10 o TC = 175 C Reverse Current Irr [A] Forward Current, IF [A] 100 o TC = 175 C 10 o TC = 125 C o TC = 75 C di/dt = 200A/µs 8 6 100A/ µs 4 di/dt = 200A/ µs 2 o 100A/µs TC = 25 C 1 0 1 2 3 Forward Voltage, VF [V] 0 4 0 Figure 23. Stored Charge 30 40 IC [A] 50 60 70 80 200 o TC = 25 C o TC = 25 C 0.6 Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [uC] 20 Figure 24. Reverse Recovery Time 0.7 o TC = 175 C 200A/µs 0.5 0.4 di/dt = 100A/µs 0.3 0.2 200A/µs 0.1 o TC = 175 C 160 di/dt = 100A/µs 200A/µs 120 di/dt = 100A/µs 80 200A/µs di/dt = 100A/µs 0.0 10 0 FGH75T65UPD Rev. C0 20 40 60 Forwad Current, IF [A] 40 80 0 20 40 60 80 Forward Current, IF [A] 7 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Typical Performance Characteristics FGH75T65UPD 650V 75A Field Stop IGBT Typical Performance Characteristics Figure 25. Transient Thermal Impedance of IGBT 0.5 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 single pulse t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode 2 Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 0.01 0.05 0.02 0.01 single pulse PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] FGH75T65UPD Rev. C0 8 www.fairchildsemi.com FGH75T65UPD 650V 75A Field Stop IGBT Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH75T65UPD Rev. C0 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FGH75T65UPD Rev. 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