19-4185; Rev 0; 8/08 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch The MAX19985A high-linearity, dual-channel, downconversion mixer is designed to provide approximately 8.7dB gain, +25.5dBm of IIP3, and 9.0dB of noise figure for 700MHz to 1000MHz diversity receiver applications. With an optimized LO frequency range of 900MHz to 1300MHz, this mixer is ideal for high-side LO injection architectures in the cellular and new 700MHz bands. Low-side LO injection is supported by the MAX19985, which is pin-pin and functionally compatible with the MAX19985A. In addition to offering excellent linearity and noise performance, the MAX19985A also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a dual-input LO selectable switch, and a pair of differential IF output amplifiers. On-chip baluns are also integrated to allow for single-ended RF and LO inputs. The MAX19985A requires a nominal LO drive of 0dBm and a typical supply current of 330mA at VCC = +5.0V or 280mA at VCC = +3.3V. The MAX19985/MAX19985A are pin compatible with the MAX19995/MAX19995A series of 1700MHz to 2200MHz mixers and pin similar with the MAX19997A/ MAX19999 series of 1850MHz to 3800MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19985A is available in a 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range of TC = -40°C to +85°C. Applications 850MHz WCDMA and cdma2000® Base Stations Features o 700MHz to 1000MHz RF Frequency Range o 900MHz to 1300MHz LO Frequency Range o 50MHz to 500MHz IF Frequency Range o 8.7dB Typical Conversion Gain o 9.0dB Typical Noise Figure o +25.5dBm Typical Input IP3 o +12.6dBm Typical Input 1dB Compression Point o 76dBc Typical 2LO-2RF Spurious Rejection at PRF = -10dBm o Dual Channels Ideal for Diversity Receiver Applications o 48dB Typical Channel-to-Channel Isolation o Low -3dBm to +3dBm LO Drive o Integrated LO Buffer o Internal RF and LO Baluns for Single-Ended Inputs o Built-In SPDT LO Switch with 46dB LO1-to-LO2 Isolation and 50ns Switching Time o Pin Compatible with the MAX19995/MAX19995A Series of 1700MHz to 2200MHz Mixers o Pin Similar to the MAX19997A/MAX19999 Series of 1850MHz to 3800MHz Mixers o Single +5.0V or +3.3V Supply o External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode 700MHz LTE/WiMAX™ Base Stations Ordering Information GSM850/900 2G and 2.5G EDGE Base Stations iDEN® Base Stations PART TEMP RANGE PIN-PACKAGE Fixed Broadband Wireless Access MAX19985AETX+ -40°C to +85°C 36 Thin QFN-EP* Wireless Local Loop MAX19985AETX+T -40°C to +85°C 36 Thin QFN-EP* Private Mobile Radios +Denotes a lead-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. Military Systems cdma2000 is a registered trademark of Telecommunications Industry Association. Typical Application Circuit and Pin Configuration appear at end of data sheet. WiMAX is a trademark of WiMAX Forum. iDEN is a registered trademark of Motorola, Inc. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX19985A General Description MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch ABSOLUTE MAXIMUM RATINGS θJA (Notes 2, 3)..............................................................+38°C/W θJC (Note 3).....................................................................7.4°C/W Operating Temperature Range (Note 4) .....TC = -40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C VCC to GND ...........................................................-0.3V to +5.5V LO1, LO2 to GND ...............................................................±0.3V Any Other Pins to GND...............................-0.3V to (VCC + 0.3V) RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm RFMAIN, RFDIV Current (RF is DC shorted to GND through balun)....................................................50mA Continuous Power Dissipation (Note 1) ..............................8.8W Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150°C. Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150°C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = 4.75V to 5.25V, TC = -40°C to +85°C. Typical values are at VCC = 5.0V, TC = +25°C, all parameters are production tested, unless otherwise noted.) PARAMETER SYMBOL Supply Voltage VCC Supply Current ICC LOSEL Input High Voltage VIH LOSEL Input Low Voltage VIL LOSEL Input Current CONDITIONS MIN TYP MAX UNITS 4.75 5 5.25 V 330 380 mA 2 IIH, IIL V -10 0.8 V +10 µA +3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = 3.0V to 3.6V, TC = -40°C to +85°C. Typical values are at VCC = 3.3V, TC = +25°C, all parameters are guaranteed by design and not production tested, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 3.0 3.3 3.6 V Supply Voltage VCC R2 = R5 = 600Ω Supply Current ICC Total supply current, VCC = 3.3V 280 mA LOSEL Input High Voltage VIH 2 V LOSEL Input Low Voltage VIL 0.8 V 2 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch MAX UNITS RF Frequency PARAMETER fRF (Note 5) 700 1000 MHz LO Frequency fLO (Note 5) 900 1300 MHz 100 500 fIF Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Note 5) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Note 5) 50 250 (Note 5) -3 +3 IF Frequency LO Drive Level SYMBOL PLO CONDITIONS MIN TYP MHz dBm +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER Conversion Power Gain SYMBOL GC CONDITIONS MIN TYP MAX fIF = 200MHz, fRF = 824MHz to 915MHz, TC = -40°C to +85°C 7.0 8.7 10.2 fIF = 200MHz, fRF = 824MHz to 915MHz, TC = +25°C (Note 9) 7.7 8.7 9.7 0.15 0.3 dB Conversion Power Gain Variation vs. Frequency ΔGC Flatness over any one of three frequency bands: fRF = 824MHz to 849MHz, fRF = 869MHz to 894MHz, fRF = 880MHz to 915MHz (Note 9) Gain Variation Over Temperature TCG TC = -40°C to +85°C -0.012 TC = -40°C to +85°C 9.2 11.5 fRF = 850MHz, fIF = 200MHz, PLO = 0dBm, TC = +25°C, VCC = +5.0V 9.0 10.3 Noise Figure NF Noise Figure Temperature Coefficient TCNF TC = -40°C to +85°C 0.018 Noise Figure Under Blocking Condition NFB +8dBm blocker tone applied to RF port, fRF = 900MHz, fLO = 1090MHz, PLO = -3dBm, fBLOCKER = 800MHz, VCC = +5.0V (Note 7) 18.8 Input 1dB Compression Point IP1dB Third-Order Input Intercept Point IIP3 UNITS TC = -40°C to +85°C 10.0 12.6 TC = +25°C (Note 9) 11.0 12.6 fRF = 824MHz to 915MHz, fRF1 - fRF2 = 1MHz, fIF = 200MHz, PRF = -5dBm/tone, TC = -40°C to +85°C 22.5 25.5 fRF = 824MHz to 915MHz, fRF1 - fRF2 = 1MHz, fIF = 200MHz, PRF = -5dBm/tone, TC = +25°C (Note 9) 23.5 dB dB/°C dB dB/°C 22 dB dBm dBm 25.5 _______________________________________________________________________________________ 3 MAX19985A RECOMMENDED AC OPERATING CONDITIONS MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6) PARAMETER SYMBOL CONDITIONS 2LO-2RF Spur Rejection 2x2 fRF = 800MHz, fLO = 1000MHz, fSPUR = 900MHz 3LO-3RF Spur Rejection 3x3 fRF = 800MHz, fLO = 1000MHz, fSPUR = 933.3MHz MIN TYP PRF = -10dBm -63 -76 PRF = -5dBm (Note 9) -58 -71 PRF = -10dBm -65 -78 PRF = -5dBm (Note 9) -60 -73 MAX UNITS dBc dBc fLO = 900MHz to 1300MHz, PLO = +3dBm (Note 10) -40 -20 fLO = 900MHz to 1200MHz, PLO = +3dBm (Note 10) -38 -25 fLO = 1200MHz to 1300MHz, PLO = +3dBm (Note 10) -35 -22 3LO Leakage at RF Port fLO = 900MHz to 1300MHz, PLO = +3dBm (Note 10) -50 -28 dBm 4LO Leakage at RF Port fLO = 900MHz to 1300MHz, PLO = +3dBm (Note 9) -25 -15 dBm LO Leakage at IF Port fLO = 900MHz to 1300MHz, PLO = +3dBm (Note 10) -35 -23 dBm RF-to-IF Isolation fRF = 824MHz to 915MHz (Note 10) 30 38 dB LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 900MHz, fLO2 = 901MHz, PRF = -5dBm (Notes 8, 10) 40 46 dB Channel-to-Channel Isolation RFMAIN (RFDIV) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50Ω (Note 9) 40 48 dB LO Leakage at RF Port 2LO Leakage at RF Port LO Switching Time RF Input Impedance 50% of LOSEL to IF settled within 2 degrees ZRF LO on and IF terminated into matched impedance RF Input Return Loss LO Input Impedance ZLO RF and IF terminated into matched impedance, LO port selected LO Input Return Loss IF Terminal Output Impedance IF Return Loss 4 ZIF dBm dBm 50 1000 ns 50 Ω 20 dB 50 Ω 20 dB RF and IF terminated into matched impedance, LO port unselected 20 Nominal differential impedance at the IC’s IF output 200 Ω RF terminated in 50Ω; transformed to 50Ω using external components shown in the Typical Application Circuit 18 dB _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch (Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6) PARAMETER Conversion Power Gain SYMBOL CONDITIONS GC Conversion Power Gain Variation vs. Frequency ΔGC Flatness over any one of three frequency bands: fRF = 824MHz to 849MHz, fRF = 869MHz to 894MHz, fRF = 880MHz to 915MHz Gain Variation Over Temperature TCG TC = -40°C to +85°C Noise Figure NF Noise Figure Temperature Coefficient TCNF Input 1dB Compression Point IP1dB TC = -40°C to +85°C MIN TYP dB 0.15 dB -0.012 dB/°C 9.0 dB 0.018 dB/°C 10.6 dBm 24.7 dBm Third-Order Input Intercept Point IIP3 -74.9 2x2 fRF = 800MHz, fLO = 1000MHz, fSPUR = 900MHz PRF = -10dBm 2LO-2RF Spur Rejection PRF = -5dBm -69.9 fRF = 800MHz, fLO = 1000MHz, fSPUR = 933.333MHz PRF = -10dBm -78 PRF = -5dBm -73 3x3 UNITS 8.7 fRF1 = 900MHz, fRF2 = 901MHz, fIF = 200MHz, PRF = -5dBm/tone 3LO-3RF Spur Rejection MAX dBc dBc Maximum LO Leakage at RF Port fLO = 900MHz to 1300MHz, PLO = +3dBm -40 dBm Maximum 2LO Leakage at RF Port fLO = 900MHz to 1300MHz, PLO = +3dBm -42 dBm Maximum LO Leakage at IF Port fLO = 900MHz to 1300MHz, PLO = +3dBm -34 dBm Minimum RF-to-IF Isolation fRF = 824MHz to 915MHz 38 dB LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 900MHz, fLO2 = 901MHz (Note 8) 45 dB Channel-to-Channel Isolation RFMAIN (RFDIV) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50Ω 48 dB LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns 50 Ω 21 dB 50 Ω RF Input Impedance ZRF LO on and IF terminated into matched impedance RF Input Return Loss LO Input Impedance LO Input Return Loss ZLO RF and IF terminated into matched impedance, LO port selected 31 RF and IF terminated into matched impedance, LO port unselected 24 dB _______________________________________________________________________________________ 5 MAX19985A +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6) PARAMETER IF Terminal Output Impedance IF Output Return Loss SYMBOL ZIF CONDITIONS MIN TYP MAX UNITS Nominal differential impedance at the IC’s IF output 200 Ω RF terminated in 50Ω; transformed to 50Ω using external components shown in the Typical Application Circuit 17 dB Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics. Performance is optimized for RF frequencies of 824MHz to 915MHz. Note 6: All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit. Note 7: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer including the LO noise, as defined in the Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. Note 8: Measured at IF port at IF frequency. LOSEL may be in any logic state. Note 9: Limited production testing. Note 10: Guaranteed by production testing. Note 5: 6 _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch TC = +25°C 7 9 8 PLO = -3dBm, 0dBm, +3dBm 1000 700 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY MAX19985A toc04 25 TC = +25°C 24 TC = -30°C 26 PLO = +3dBm, 0dBm 27 PRF = -5dBm/TONE PLO = -3dBm VCC = 5.25V 26 1000 25 VCC = 5.0V 24 VCC = 4.75V 23 23 22 22 22 1000 700 RF FREQUENCY (MHz) 700 1000 NOISE FIGURE (dB) 10 9 8 1000 NOISE FIGURE vs. RF FREQUENCY 10 9 8 PLO = -3dBm, 0dBm, +3dBm 7 TC = +25°C 900 12 MAX19985A toc08 11 800 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 12 MAX19985A toc07 TC = +85°C 11 900 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 12 800 MAX19985A toc09 900 11 NOISE FIGURE (dB) 800 7 900 INPUT IP3 vs. RF FREQUENCY 25 24 800 RF FREQUENCY (MHz) PRF = -5dBm/TONE 23 700 MAX19985A toc03 700 1000 27 INPUT IP3 (dBm) INPUT IP3 (dBm) 900 INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE 26 VCC = 4.75V, 5.0V, 5.25V RF FREQUENCY (MHz) 27 TC = +85°C 800 INPUT IP3 (dBm) 900 MAX19985A toc05 800 8 6 6 700 9 7 7 6 NOISE FIGURE (dB) 10 CONVERSION GAIN (dB) 8 TC = +85°C 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 9 11 MAX19985A toc02 MAX19985A toc01 TC = -30°C 10 CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 11 MAX19985A toc06 CONVERSION GAIN vs. RF FREQUENCY 11 10 9 8 VCC = 4.75V, 5.0V, 5.25V 7 TC = -30°C 6 6 6 5 5 5 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 1000 RF FREQUENCY (MHz) _______________________________________________________________________________________ 7 MAX19985A Typical Operating Characteristics (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) TC = -30°C 55 65 PLO = +3dBm 60 55 50 900 1000 RF FREQUENCY (MHz) 900 1000 700 TC = +25°C 75 PRF = -5dBm TC = -30°C 55 85 800 900 1000 PRF = -5dBm PLO = -3dBm, 0dBm, +3dBm 800 900 VCC = 4.75V, 5.0V, 5.25V 1000 700 1000 INPUT P1dB vs. RF FREQUENCY 13 12 TC = +25°C 900 15 VCC = 5.25V 14 INPUT P1dB (dBm) 12 800 RF FREQUENCY (MHz) MAX19985A toc17 14 INPUT P1dB (dBm) 13 MAX19985A toc12 65 INPUT P1dB vs. RF FREQUENCY 15 MAX19985A toc16 TC = +85°C 75 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 14 85 55 700 RF FREQUENCY (MHz) 15 1000 95 55 700 900 3LO-3RF RESPONSE vs. RF FREQUENCY 75 65 800 RF FREQUENCY (MHz) 95 3LO-3RF RESPONSE (dBc) PRF = -5dBm 65 800 3LO-3RF RESPONSE vs. RF FREQUENCY MAX19985A toc13 3LO-3RF RESPONSE vs. RF FREQUENCY TC = +85°C VCC = 4.75V, 5.0V, 5.25V 60 RF FREQUENCY (MHz) 95 85 65 50 700 3LO-3RF RESPONSE (dBc) 800 70 55 50 700 3LO-3RF RESPONSE (dBc) MAX19985A toc11 70 75 MAX19985A toc15 TC = +25°C 60 PLO = -3dBm PRF = -5dBm MAX19985A toc18 65 75 80 2LO-2RF RESPONSE (dBc) 70 PRF = -5dBm PLO = 0dBm 2LO-2RF RESPONSE vs. RF FREQUENCY MAX19985A toc14 2LO-2RF RESPONSE (dBc) 75 80 2LO-2RF RESPONSE (dBc) PRF = -5dBm TC = +85°C 2LO-2RF RESPONSE vs. RF FREQUENCY MAX19985A toc10 2LO-2RF RESPONSE vs. RF FREQUENCY 80 INPUT P1dB (dBm) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch VCC = 5.0V 13 12 PLO = -3dBm, 0dBm, +3dBm 11 11 11 VCC = 4.75V TC = -30°C 10 800 900 RF FREQUENCY (MHz) 8 10 10 700 1000 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 RF FREQUENCY (MHz) _______________________________________________________________________________________ 1000 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch 50 45 40 TC = -30°C, +25°C, +85°C 35 50 45 PLO = -3dBm, 0dBm, +3dBm 40 55 900 1000 50 45 VCC = 4.75V, 5.0V, 5.25V 40 35 30 30 800 700 MAX19985A toc21 60 35 30 800 700 900 800 700 1000 900 1000 RF FREQUENCY (MHz) RF FREQUENCY (MHz) LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY -35 -40 TC = +25°C, +85°C PLO = +3dBm -30 -35 PLO = -3dBm -40 -45 -45 MAX19985A toc24 -25 -20 LO LEAKAGE AT IF PORT (dBm) -30 MAX19985A toc23 TC = -30°C -20 LO LEAKAGE AT IF PORT (dBm) -25 MAX19985A toc22 RF FREQUENCY (MHz) -20 LO LEAKAGE AT IF PORT (dBm) MAX19985A toc20 55 CHANNEL ISOLATION (dB) MAX19985A toc19 CHANNEL ISOLATION (dB) 55 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY 60 CHANNEL ISOLATION (dB) CHANNEL ISOLATION vs. RF FREQUENCY 60 -25 -30 -35 -40 VCC = 4.75V, 5.0V, 5.25V -45 PLO = 0dBm -50 -50 1000 1050 1100 1150 950 1000 1050 1100 1150 1200 950 1000 1050 1100 LO FREQUENCY (MHz) LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION vs. RF FREQUENCY TC = +85°C 40 35 TC = -30°C 45 PLO = -3dBm, 0dBm, +3dBm 40 35 50 1200 45 VCC = 4.75V, 5.0V, 5.25V 40 35 TC = +25°C 30 30 30 800 1150 MAX19985A toc27 50 RF-TO-IF ISOLATION (dB) MAX19985A toc25 45 700 900 LO FREQUENCY (MHz) 50 RF-TO-IF ISOLATION (dB) -50 900 1200 MAX19985A toc26 950 RF-TO-IF ISOLATION (dB) 900 900 RF FREQUENCY (MHz) 1000 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 1000 RF FREQUENCY (MHz) _______________________________________________________________________________________ 9 MAX19985A Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) LO LEAKAGE AT RF PORT vs. LO FREQUENCY -50 TC = +85°C -60 PLO = -3dBm, 0dBm, +3dBm -40 -50 -60 800 900 1000 1100 1200 MAX19985A toc30 -40 -50 -60 700 800 900 1000 1100 700 1200 800 900 1000 1100 LO FREQUENCY (MHz) LO FREQUENCY (MHz) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY TC = -30°C, +25°C, +85°C -40 -50 -60 -30 PLO = -3dBm, 0dBm, +3dBm -40 -50 -60 800 900 1000 1100 1200 -20 -30 VCC = 4.75V, 5.0V, 5.25V -40 -50 -60 700 800 900 1000 1100 1200 700 800 900 1000 1100 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY TC = +85°C TC = +25°C 35 40 PLO = +3dBm PLO = -3dBm, 0dBm 35 30 30 1000 1100 1200 1300 LO FREQUENCY (MHz) 1400 1500 1200 MAX19985A toc36 45 50 LO SWITCH ISOLATION (dB) 40 MAX19985A toc35 TC = -30°C 45 50 LO SWITCH ISOLATION (dB) MAX19985A toc34 50 1200 MAX19985A toc33 MAX19985A toc32 -20 -10 2LO LEAKAGE AT RF PORT (dBm) -30 -10 2LO LEAKAGE AT RF PORT (dBm) MAX19985A toc31 -20 900 VCC = 4.75V, 5.0V, 5.25V LO FREQUENCY (MHz) -10 700 -30 -70 -70 700 2LO LEAKAGE AT RF PORT (dBm) -30 -20 LO LEAKAGE AT RF PORT (dBm) -40 MAX19985A toc29 TC = +25°C LO LEAKAGE AT RF PORT (dBm) MAX19985A toc28 LO LEAKAGE AT RF PORT (dBm) TC = -30°C -30 -20 -70 10 LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT vs. LO FREQUENCY -20 LO SWITCH ISOLATION (dB) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch VCC = 4.75V, 5.0V, 5.25V 45 40 35 30 900 1000 1100 1200 1300 LO FREQUENCY (MHz) 1400 1500 900 1000 1100 1200 1300 LO FREQUENCY (MHz) ______________________________________________________________________________________ 1400 1500 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch IF PORT RETURN LOSS vs. IF FREQUENCY PLO = -3dBm, 0dBm, +3dBm 15 20 5 10 15 20 25 25 IF RETURN LOSS DEPENDS ON EXTERNAL IF COMPONENTS 30 30 750 800 850 900 950 10 PLO = +3dBm PLO = 0dBm 20 30 PLO = -3dBm 40 50 140 50 1000 230 320 410 500 700 850 1000 1100 1300 RF FREQUENCY (MHz) IF FREQUENCY (MHz) LO FREQUENCY (MHz) LO UNSELECTED RETURN LOSS vs. LO FREQUENCY SUPPLY CURRENT vs. TEMPERATURE (TC) CONVERSION GAIN vs. RF FREQUENCY (VARIOUS LO AND IF BIAS) VCC = 5.25V 350 SUPPLY CURRENT (mA) 10 20 30 PLO = -3dBm, 0dBm, +3dBm 330 310 40 290 50 270 11 VCC = 5.0V MAX19985A toc42 370 MAX19985A toc40 0 1, 2, 3, 4 10 CONVERSION GAIN (dB) 700 LO UNSELECTED RETURN LOSS (dB) VCC = 4.75V, 5.0V, 5.25V 0 MAX19985A toc39 LO = 900MHz LO SELECTED RETURN LOSS (dB) 10 0 MAX19985A toc41 RF PORT RETURN LOSS (dB) 5 LO SELECTED RETURN LOSS vs. LO FREQUENCY MAX19985A toc38 IF = 200MHz IF PORT RETURN LOSS (dB) 0 MAX19985A toc37 RF PORT RETURN LOSS vs. RF FREQUENCY 9 8 5 7 6 7 VCC = 4.75V SEE TABLE 1 FOR RESISTOR AND I CC VALUES 850 700 1000 1100 1300 -35 -15 5 25 45 65 900 1000 3LO-3RF RESPONSE vs. RF FREQUENCY (VARIOUS LO AND IF BIAS) 5 24 4 22 6 20 7 18 80 1 2, 3, 4 PRF = -5dBm 75 70 65 60 5 6 7 55 SEE TABLE 1 FOR RESISTOR AND I CC VALUES SEE TABLE 1 FOR RESISTOR AND I CC VALUES 800 900 RF FREQUENCY (MHz) 1000 1, 2, 3, 4 80 PRF = -5dBm 75 70 65 5 60 55 50 6 7 SEE TABLE 1 FOR RESISTOR AND I CC VALUES 45 50 14 85 3LO-3RF RESPONSE (dBc) 1 2LO-2RF RESPONSE (dBc) 2, 3, 4 MAX19985A toc45 2LO-2RF RESPONSE vs. RF FREQUENCY (VARIOUS LO AND IF BIAS) MAX19985A toc44 INPUT IP3 vs. RF FREQUENCY (VARIOUS LO AND IF BIAS) MAX19985A toc43 RF FREQUENCY (MHz) 26 700 800 TEMPERATURE (°C) 1 16 700 85 LO FREQUENCY (MHz) 28 INPUT IP3 (dBm) 6 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 1000 RF FREQUENCY (MHz) ______________________________________________________________________________________ 11 MAX19985A Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) CONVERSION GAIN vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 10 CONVERSION GAIN (dB) 14 L = L3 = L6 12 10 8 7 6 5 6 9 L = 0Ω, 7.5nH, 15nH, 30nH 8 27 L = L3 = L6 26 INPUT IP3 (dBm) 1, 2, 3, 4 MAX19985A toc47 11 MAX19985A toc46 16 INPUT IP3 vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) MAX19985A toc48 INPUT P1dB vs. RF FREQUENCY (VARIOUS LO AND IF BIAS) INPUT P1dB (dBm) L = 30nH 25 L = 0Ω, 7.5nH, 15nH 24 7 23 SEE TABLE 1 FOR RESISTOR AND I CC VALUES 6 800 700 900 22 1000 700 RF FREQUENCY (MHz) 800 900 1000 2LO-2RF RESPONSE (dBc) 75 70 65 L = 15nH 60 L = 0Ω 95 PRF = -5dBm L = L3 = L6 3LO-3RF RESPONSE (dBc) PRF = -5dBm L = L3 = L6 L = 30nH 3LO-3RF RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) MAX19985A toc49 80 900 RF FREQUENCY (MHz) 2LO-2RF RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) L = 7.5nH 800 700 RF FREQUENCY (MHz) MAX19985A toc50 4 85 75 65 L = 0Ω, 7.5nH, 15nH, 30nH 55 55 50 700 800 700 1000 900 800 1000 900 LO LEAKAGE AT IF PORT vs. LO FREQUENCY (VARIOUS VALUES OF L3 AND L6) RF-TO-IF ISOLATION vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) L = L3 = L6 -10 L = 7.5nH -20 -30 -40 L = 15nH -50 L = 30nH 50 L = 30nH RF-TO-IF ISOLATION (dB) L = 0Ω L = L3 = L6 L = 15nH 40 MAX19985A toc52 RF FREQUENCY (MHz) MAX19985A toc51 RF FREQUENCY (MHz) 0 LO LEAKAGE AT IF PORT (dBm) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch 30 L = 7.5nH 20 L = 0Ω 10 -60 0 -70 900 950 1000 1050 1100 LO FREQUENCY (MHz) 12 1150 1200 700 800 900 RF FREQUENCY (MHz) ______________________________________________________________________________________ 1000 1000 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY TC = +25°C 7 9 8 PLO = -3dBm, 0dBm, +3dBm 7 6 900 1000 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 800 900 1000 MAX19985A toc55 700 INPUT IP3 (dBm) 24 TC = +25°C 23 24 PLO = +3dBm PLO = 0dBm PLO = -3dBm 23 1000 26 VCC = 3.6V PRF = -5dBm/TONE 25 INPUT IP3 (dBm) MAX19985A toc56 25 900 INPUT IP3 vs. RF FREQUENCY 26 PRF = -5dBm/TONE VCC = 3.3V 800 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE VCC = 3.3V 25 VCC = 3.0V, 3.3V, 3.6V RF FREQUENCY (MHz) 26 TC = +85°C 8 6 700 MAX19985A toc57 800 9 7 6 700 INPUT IP3 (dBm) 10 24 MAX19985A toc58 8 11 CONVERSION GAIN (dB) 9 TC = +85°C 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 10 VCC = 3.3V MAX19985A toc54 VCC = 3.3V TC = -30°C 11 MAX19985A toc53 11 CONVERSION GAIN vs. RF FREQUENCY VCC = 3.3V VCC = 3.0V 23 TC = -30°C 22 21 21 21 700 800 900 1000 700 900 800 900 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY NOISE FIGURE vs. RF FREQUENCY NOISE FIGURE vs. RF FREQUENCY 11 9 8 7 10 9 8 7 TC = +25°C TC = -30°C 900 RF FREQUENCY (MHz) 1000 10 9 8 VCC = 3.0V, 3.3V, 3.6V 6 5 800 11 7 PLO = -3dBm, 0dBm, +3dBm 6 5 12 NOISE FIGURE (dB) NOISE FIGURE (dB) 10 VCC = 3.3V 1000 MAX19985A toc61 12 MAX19985A toc60 VCC = 3.3V MAX19985A toc59 11 700 700 1000 RF FREQUENCY (MHz) TC = +85°C 6 800 RF FREQUENCY (MHz) 12 NOISE FIGURE (dB) 22 22 5 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 1000 RF FREQUENCY (MHz) ______________________________________________________________________________________ 13 MAX19985A Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) 2LO-2RF RESPONSE vs. RF FREQUENCY 70 65 TC = -30°C TC = +25°C 60 55 65 60 900 1000 VCC = 3.0V, 3.3V, 3.6V 60 50 800 700 900 1000 800 700 900 1000 3LO-3RF RESPONSE vs. RF FREQUENCY 3LO-3RF RESPONSE vs. RF FREQUENCY 3LO-3RF RESPONSE vs. RF FREQUENCY TC = +25°C 75 65 85 75 65 PLO = -3dBm, 0dBm, +3dBm TC = -30°C 55 95 PRF = -5dBm 55 800 900 1000 800 RF FREQUENCY (MHz) 65 VCC = 3.0V 1000 700 VCC = 3.3V 12 11 10 TC = +25°C TC = -30°C 800 900 1000 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY INPUT P1dB vs. RF FREQUENCY INPUT P1dB (dBm) TC = +85°C 900 13 MAX19985A toc68 VCC = 3.3V 12 75 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 13 VCC = 3.3V VCC = 3.6V 55 700 13 11 10 PLO = -3dBm, 0dBm, +3dBm 9 VCC = 3.6V 12 INPUT P1dB (dBm) 700 85 MAX19985A toc70 TC = +85°C PRF = -5dBm VCC = 3.3V 3LO-3RF RESPONSE (dBc) 85 95 3LO-3RF RESPONSE (dBc) PRF = -5dBm MAX19985A toc66 RF FREQUENCY (MHz) MAX19985A toc65 RF FREQUENCY (MHz) VCC = 3.3V VCC = 3.3V 11 10 9 VCC = 3.0V 8 8 8 7 7 7 700 65 RF FREQUENCY (MHz) 95 9 70 55 50 800 700 800 900 RF FREQUENCY (MHz) 14 PLO = 0dBm PLO = +3dBm 55 50 3LO-3RF RESPONSE (dBc) 70 PRF = -5dBm 75 MAX19985A toc64 75 80 MAX19985A toc67 TC = +85°C PRF = -5dBm VCC = 3.3V PLO = -3dBm MAX19985A toc69 2LO-2RF RESPONSE (dBc) 75 80 2LO-2RF RESPONSE (dBc) PRF = -5dBm 2LO-2RF RESPONSE vs. RF FREQUENCY MAX19985A toc63 VCC = 3.3V 2LO-2RF RESPONSE (dBc) 80 MAX19985A toc62 2LO-2RF RESPONSE vs. RF FREQUENCY INPUT P1dB (dBm) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch 1000 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 RF FREQUENCY (MHz) ______________________________________________________________________________________ 1000 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch CHANNEL ISOLATION vs. RF FREQUENCY 50 45 TC = -30°C, +25°C, +85°C 40 55 35 PLO = -3dBm, 0dBm, +3dBm 40 900 1000 45 VCC = 3.0V, 3.3V, 3.6V 40 30 800 700 900 1000 700 800 900 1000 RF FREQUENCY (MHz) RF FREQUENCY (MHz) RF FREQUENCY (MHz) LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY -30 -35 -40 TC = +85°C TC = +25°C -45 -25 PLO = +3dBm -30 -35 PLO = -3dBm -40 PLO = 0dBm -45 -50 -20 1050 1100 1150 1200 -25 VCC = 3.6V -30 VCC = 3.3V -35 VCC = 3.0V -40 -45 -50 1000 950 MAX19985A toc76 TC = -30°C VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -25 -20 MAX19985A toc75 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) MAX19985A toc74 -20 -50 900 1000 950 1050 1100 1150 1200 900 950 1000 1050 1100 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION vs. RF FREQUENCY RF-TO-IF ISOLATION vs. RF FREQUENCY 45 TC = +85°C 40 35 TC = -30°C 50 VCC = 3.3V 45 PLO = -3dBm, 0dBm, +3dBm 40 35 1150 50 1200 MAX19985A toc79 VCC = 3.3V RF-TO-IF ISOLATION (dB) MAX19985A toc77 50 RF-TO-IF ISOLATION (dB) 900 50 35 30 800 700 LO LEAKAGE AT IF PORT (dBm) 45 55 35 30 RF-TO-IF ISOLATION (dB) 50 60 MAX19985A toc73 VCC = 3.3V MAX19985A toc78 CHANNEL ISOLATION (dB) 55 60 MAX19985A toc72 VCC = 3.3V CHANNEL ISOLATION (dB) MAX19985A toc71 60 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION (dB) CHANNEL ISOLATION vs. RF FREQUENCY 45 VCC = 3.0V, 3.3V, 3.6V 40 35 TC = +25°C 30 30 700 800 900 RF FREQUENCY (MHz) 1000 30 700 800 900 RF FREQUENCY (MHz) 1000 700 800 900 1000 RF FREQUENCY (MHz) ______________________________________________________________________________________ 15 MAX19985A Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) LO LEAKAGE AT RF PORT vs. LO FREQUENCY TC = -30°C TC = +25°C -40 -50 VCC = 3.3V -30 -40 -50 TC = +85°C -60 800 900 1000 1100 1200 VCC = 3.6V -40 VCC = 3.3V -50 VCC = 3.0V -60 700 800 900 1000 1100 1200 700 800 900 1000 1100 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -30 -40 -50 TC = -30°C, +25°C, +85°C VCC = 3.3V -20 -30 -40 -50 PLO = -3dBm, 0dBm, +3dBm -10 1200 MAX19985A toc85 -20 -10 2LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V MAX19985A toc84 MAX19985A toc83 -10 2LO LEAKAGE AT RF PORT (dBm) 700 -30 PLO = -3dBm, 0dBm, +3dBm -60 2LO LEAKAGE AT RF PORT (dBm) -20 MAX19985A toc82 -30 -20 MAX19985A toc81 LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) MAX19985A toc80 -20 LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT (dBm) LO LEAKAGE AT RF PORT vs. LO FREQUENCY -20 -30 VCC = 3.6V -40 VCC = 3.3V -50 VCC = 3.0V -60 -60 800 900 1000 1100 1200 800 900 1000 1100 1200 800 900 1000 1100 LO SWITCH ISOLATION vs. RF FREQUENCY LO SWITCH ISOLATION vs. RF FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY TC = +85°C TC = +25°C 30 45 40 PLO = +3dBm 35 PLO = -3dBm, 0dBm 30 1000 1100 1200 1300 LO FREQUENCY (MHz) 1400 1500 50 VCC = 3.0V, 3.3V, 3.6V 45 1200 MAX19985A toc88 MAX19985A toc87 VCC = 3.3V LO SWITCH ISOLATION (dB) 40 50 LO SWITCH ISOLATION (dB) TC = -30°C 45 900 700 LO FREQUENCY (MHz) VCC = 3.3V 16 700 LO FREQUENCY (MHz) 50 35 -60 LO FREQUENCY (MHz) MAX19985A toc86 700 LO SWITCH ISOLATION (dB) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch 40 35 30 900 1000 1100 1200 1300 LO FREQUENCY (MHz) 1400 1500 900 1000 1100 1200 1300 LO FREQUENCY (MHz) ______________________________________________________________________________________ 1400 1500 Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch PLO = -3dBm, 0dBm, +3dBm 15 20 25 10 15 20 VCC = 3.0V, 3.3V, 3.6V 25 30 VCC = 3.3V 10 750 800 850 900 950 1000 30 PLO = -3dBm 40 PLO = 0dBm IF RETURN LOSS DEPENDS ON EXTERNAL COMPONENTS 50 140 50 RF FREQUENCY (MHz) 230 320 410 700 500 850 VCC = 3.3V 340 VCC = 3.6V 320 SUPPLY CURRENT (mA) 10 1150 1300 SUPPLY CURRENT vs. TEMPERATURE (TC) MAX19985A toc92 0 1000 LO FREQUENCY (MHz) IF FREQUENCY (MHz) LO UNSELECTED RETURN LOSS vs. LO FREQUENCY LO UNSELECTED RETURN LOSS (dB) PLO = +3dBm 20 30 700 MAX19985A toc91 5 0 MAX19985A toc93 10 LO = 900MHz LO SELECTED RETURN LOSS (dB) RF PORT RETURN LOSS (dB) 5 0 IF PORT RETURN LOSS (dB) IF = 200MHz MAX19985A toc89 0 VCC = 3.3V LO SELECTED RETURN LOSS vs. LO FREQUENCY IF PORT RETURN LOSS vs. IF FREQUENCY MAX19985A toc90 RF PORT RETURN LOSS vs. RF FREQUENCY PLO = -3dBm, 0dBm, +3dBm 20 30 300 280 260 VCC = 3.3V 240 VCC = 3.0V 40 220 50 200 700 850 1000 1150 1300 -35 LO FREQUENCY (MHz) -15 5 25 45 65 85 TEMPERATURE (°C) Table 1. DC Current vs. Bias Resistor Settings BIAS CONDITION DC CURRENT (mA) R1 AND R4 VALUES (Ω) R2 AND R5 VALUES (Ω) 1 359.4 698 800 2 331.8 698 1100 3 322.8 698 1200 4 311.7 698 1400 5 268.2 1100 1200 6 244.4 1400 1200 7 223.7 1820 1200 Note: See TOCs 42–46 for performance trade-offs vs. DC bias condition. ______________________________________________________________________________________ 17 MAX19985A Typical Operating Characteristics (continued) (Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless otherwise noted.) MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch Pin Description PIN NAME 1 RFMAIN 2 TAPMAIN 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 GND Ground 4, 6, 10, 16, 21, 30, 36 VCC Power Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin. Pins 4 and 6 do not require bypass capacitors. 8 TAPDIV Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as possible to the pin with the smaller value capacitor closer to the part. 9 RFDIV 11 IFDBIAS IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier (see the Typical Operating Characteristics for typical performance vs. resistor value). 13, 14 IFD+, IFD- Diversity Mixer Differential IF Outputs. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 15 LEXTD Diversity External Inductor Connection. Connect a parallel combination of an inductor and a 500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (see the Typical Operating Characteristics for typical performance vs. inductor value). 17 LODBIAS 18, 28 N.C. No Connection. Not internally connected. 19 LO1 Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DCblocking capacitor. 23 LOSEL 18 FUNCTION Main Channel RF input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as possible to the pin with the smaller value capacitor closer to the part. Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor. LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier (see the Typical Operating Characteristics for typical performance vs. resistor value). Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2. Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DCblocking capacitor. 27 LO2 29 LOMBIAS LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier (see the Typical Operating Characteristics for typical performance vs. resistor value). 31 LEXTM Main External Inductor Connection. Connect a parallel combination of an inductor and a 500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (see Typical Operating Characteristics for typical performance vs. inductor value). 32, 33 IFM-, IFM+ 35 IFMBIAS — EP Main Mixer Differential IF Outputs. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier (see the Typical Operating Characteristics for typical performance vs. resistor value). Exposed Pad. Internally connected to GND. Connect to a large ground plane using multiple vias to maximize thermal and RF performance. ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch The MAX19985A is a dual-channel downconverter designed to provide 8.7dB of conversion gain, +25.5dBm of IIP3, +12.6dBm typical input 1dB compression point, and a 9.0dB noise figure. In addition to its high-linearity performance, the MAX19985A achieves a high level of component integration. The device integrates two double-balanced mixers for two-channel downconversion. Both the main and diversity channels include a balun and matching circuitry to allow 50Ω single-ended interfaces to the RF ports and the two LO ports. An integrated single-pole/ double-throw (SPDT) switch provides 50ns switching time between the two LO inputs with 46dB of LO-to-LO isolation and -40dBm of LO leakage at the RF port. Furthermore, the integrated LO buffers provide a high drive level to each mixer core, reducing the LO drive required at the MAX19985A’s inputs to a range of -3dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion, which is ideal for providing enhanced 2LO-2RF performance. Specifications are guaranteed over broad frequency ranges to allow for use in WCDMA, GSM/EDGE, iDEN, cdma2000, and LTE/WiMAX cellular and 700MHz band base stations. The MAX19985A is specified to operate over an RF input range of 700MHz to 1000MHz, an LO range of 900MHz to 1300MHz, and an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range (see the Typical Operating Characteristics for details). Operation beyond these ranges is possible (see the Typical Operating Characteristics for additional information). Although this device is optimized for high-side LO injection applications, it can operate in low-side LO injection modes as well. However, performance degrades as fLO continues to decrease. For increased low-side LO performance, refer to the MAX19985 data sheet. RF Port and Balun The RF input ports of both the main and diversity channels are internally matched to 50Ω, requiring no external matching components. A DC-blocking capacitor is required as the input is internally DC shorted to ground through the on-chip balun. The RF port input return loss is typically 20dB over the RF frequency range of 770MHz to 915MHz. LO Inputs, Buffer, and Balun The MAX19985A is optimized for a 900MHz to 1300MHz LO frequency range. As an added feature, the MAX19985A includes an internal LO SPDT switch for use in frequency-hopping applications. The switch selects one of the two single-ended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically 50ns, which is more than adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL), where logic-high selects LO1 and logic-low selects LO2. LO1 and LO2 inputs are internally matched to 50Ω, requiring only an 82pF DC-blocking capacitor. To avoid damage to the part, voltage MUST be applied to VCC before digital logic is applied to LOSEL. Alternatively, a 1kΩ resistor can be placed in series at the LOSEL to limit the input current in applications where LOSEL is applied before VCC. The main and diversity channels incorporate a twostage LO buffer that allows for a wide-input power range for the LO drive. The on-chip low-loss baluns, along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the LO inputs to the IF outputs are integrated on-chip. High-Linearity Mixer The core of the MAX19985A dual-channel downconverter consists of two double-balanced, highperformance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2LO-2RF rejection, and noise figure performance are typically +25.5dBm, 76dBc, and 9.0dB, respectively. Differential IF The MAX19985A has an IF frequency range of 50MHz to 500MHz, where the low-end frequency depends on the frequency response of the external IF components. Note that these differential ports are ideal for providing enhanced IIP2 performance. Single-ended IF applications require a 4:1 (impedance ratio) balun to transform the 200Ω differential IF impedance to a 50Ω singleended system. After the balun, the return loss is typically 18dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on both IFD+/IFD- and IFM+/IFM- ports to keep external DC from entering the IF ports of the mixer. ______________________________________________________________________________________ 19 MAX19985A Detailed Description MAX19985A Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch Applications Information Input and Output Matching The RF and LO inputs are internally matched to 50Ω. No matching components are required. The RF port input return loss is typically 20dB over the RF frequency range of 770MHz to 915MHz and return loss at the LO ports are typically 20dB over the entire LO range. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200Ω (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance to a 50Ω single-ended output (see the Typical Application Circuit). Externally Adjustable Bias Each channel of the MAX19985A has two pins (LO_BIAS, IF_BIAS) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 2. Larger-value resistors can be used to reduce power dissipation at the expense of some performance loss. See the Typical Operating Characteristics to evaluate the power vs. performance tradeoff. If ±1% resistors are not readily available, ±5% resistors can be substituted. LEXT_ Inductors For applications requiring optimum RF-to-IF and LO-toIF isolation, connect a parallel combination of a lowESR inductor and a 500Ω resistor from LEXT_ (pins 15 and 31) to ground. When improved isolation is not required, connect LEXT_ to ground using a 0Ω resistance. See the Typical Operating Characteristics to evaluate the isolation vs. inductor value tradeoff. Layout Considerations A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be so that any capacitance from both IF- and IF+ to ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the Table 2. Component Values COMPONENT VALUE DESCRIPTION C1, C2, C7, C8 39pF C3, C6 0.033µF C4, C5 — C9, C13, C15, C17, C18 0.01µF Microwave capacitors (0402) C10, C11, C12, C19, C20, C21 150pF Microwave capacitors (0603) Microwave capacitors (0603) Not used C14, C16 82pF L1, L2, L4, L5 330nH Wire-wound high-Q inductors (0805) L3, L6 30nH Wire-wound high-Q inductors (0603). Smaller values can be used at the expense of some performance loss (see the Typical Operating Characteristics). R1, R4 698Ω R2, R5 1.2kΩ 600Ω 20 Microwave capacitors (0402) Microwave capacitors (0402) ±1% resistors (0402). Larger values can be used to reduce power at the expense of some performance loss (see the Typical Operating Characteristics). ±1% resistors (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss (see the Typical Operating Characteristics). ±1% resistors (0402). Use for VCC = +3.3V applications. R3, R6 0Ω ±1% resistors (1206) R7, R8 500Ω ±1% resistors (0402) T1, T2 4:1 Transformers (200:50) Mini-Circuits TC4-1W-7A U1 — MAX19985A IC ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and TAPMAIN/TAPDIV with the capacitors shown in the Typical Application Circuit (see Table 2 for component values). Place the TAPMAIN/TAPDIV bypass capacitors to ground within 100 mils of the pin. Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX19985A’s 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19985A is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. ______________________________________________________________________________________ 21 MAX19985A device package to the PCB. The MAX19985A evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch MAX19985A Typical Application Circuit C19 VCC IF MAIN OUTPUT T1 L1 C21 R3 L2 4:1 C20 VCC VCC R7 L3 C17 C1 TAPMAIN C3 C2 GND VCC VCC C4 GND VCC VCC C5 C6 GND C7 TAPDIV RFDIV RF DIV INPUT 36 35 34 33 32 LOMBIAS VCC LEXTM IFM- IFM+ GND IFMBIAS VCC + RFMAIN RF MAIN INPUT 31 30 29 R2 N.C. R1 C18 28 27 1 U1 26 2 MAX19985A 3 25 4 24 5 23 6 22 7 21 EXPOSED PAD 8 20 19 9 C8 LO2 GND LO2 C16 GND GND LOSEL LO SELECT GND VCC VCC C15 GND LO1 LO1 C14 17 VCC VCC R4 L6 R8 18 N.C. 16 LODBIAS 15 LEXTD 14 IFD- 13 IFD+ 12 GND 11 IFDBIAS VCC 10 R5 VCC C13 C9 C11 VCC T2 L5 C12 R6 L4 4:1 C10 22 IF DIV OUTPUT ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch RFMAIN 1 TAPMAIN 2 IFMBIAS GND IFM+ IFM- LEXTM VCC LOMBIAS N.C. + VCC TOP VIEW (WITH EXPOSED PAD ON THE BOTTOM OF THE PACKAGE) 36 35 34 33 32 31 30 29 28 27 LO2 26 GND MAX19985A GND 3 25 GND VCC 4 24 GND GND 5 23 LOSEL VCC 6 22 GND GND 7 21 VCC 20 GND 19 LO1 13 14 15 16 17 18 VCC LODBIAS N.C. 12 LEXTD 11 IFD- 10 IFD+ 9 GND RFDIV IFDBIAS 8 VCC TAPDIV EXPOSED PAD THIN QFN-EP 6mm x 6mm Package Information Chip Information PROCESS: SiGe BiCMOS For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 36 Thin QFN-EP T3666+2 21-0141 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 23 © 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc. MAX19985A Pin Configuration/Functional Diagram