HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH PC TC = 25°C TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) 30 A 120 A ICM = 60 @ 0.8 VCES A 200 W -55 ... +150 °C G = Gate, E = Emitter, TJM 150 °C -55 ... +150 °C Features Tstg 300 °C 1.13/10 Nm/lb.in. 6 4 g g TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque, TO-247 AD Weight TO-247 AD TO-268 = 600 V = 60 A = 1.8 V = 100 ns G C E C (TAB) C = Collector, TAB = Collector • International standard package • Moderate frequency IGBT and antiparallel FRED in one package • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 150°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.0 V 200 3 mA mA ±100 nA 1.8 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • High power density • Optimized Vce(sat) and switching speeds for medium frequency application 98510C (7/00) 1-5 IXGH 30N60BD1 IXGT 30N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 25 S 2700 pF 240 pF 50 pF 110 nC 22 nC 40 nC td(on) Inductive load, TJ = 25°C 25 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 4.7 W 30 ns td(off) tfi Eoff td(on) t ri Eon td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 150°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 4.7 W Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK (TO-247 AD) tfi Reverse Diode (FRED) 220 ns 100 190 ns 1.0 2.0 Dim. Millimeter Min. Max. Test Conditions VF IF = IC90, VGE = 0 V, Pulse test t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V TJ =100°C IF = 1 A; -di/dt = 100 A/ms; VR = 30 V A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 25 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 35 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 1.0 mJ 200 ns 230 ns 2.5 mJ 0.25 0.62 K/W K/W L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-268AA (D3 PAK) TJ = 150°C 1.6 2.5 6 100 25 V V A ns ns 0.9 K/W Dim. Min. Recommended Footprint © 2000 IXYS All rights reserved Inches Min. Max. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol RthJC 130 TO-247 AD (IXGH) Outline A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 2-5 IXGH 30N60BD1 IXGT 30N60BD1 Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) Fig. 5. Admittance Curves Fig. 6.Temperature Dependence of BVDSS & VGE(th) © 2000 IXYS All rights reserved 3-5 IXGH 30N60BD1 IXGT 30N60BD1 Fig. 7. Dependence of EOFF and EOFF on IC. Fig. 9. Gate Charge Fig. 8. Dependence of EOFF on RG. Fig. 10. Turn-off Safe Operating Area Fig. 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGH 30N60BD1 IXGT 30N60BD1 TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF= 60A IF= 30A IF= 15A IF= 60A IF= 30A IF= 15A TVJ=150°C TVJ=100°C TVJ=25°C Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt Fig. 14 Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V TVJ= 100°C IF = 30A V FR tfr IF= 60A IF= 30A IF= 15A I RM Qr Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162 Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved 5-5