DONGGUAN NANJING ELECTRONICS LTD., SOT-23 Plastic-Encapsulate Diodes BAS16 SWITCHING DIODE SOT-23 FEATURES Fast Switching Speed z z For General Purpose Switching Applications z High Conductance 1 3 Marking: 2 A6 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Peak ReverseVoltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 150 mA RMS Reverse Voltage Peak Forward Surge Current @t=1.0μs @t =1.0s 2.0 IFSM A 1.0 PD 225 mW RθJA 556 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature TSTG -55~+150 ℃ Power Dissipation Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Symbol V(BR) Test conditions IR= 100µA IR VR=75V Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0, f=1MHz Reveres recovery time trr Reverse voltage leakage current IF=IR=10mA,Irr=0.1×IR, RL=100Ω Min Max 75 Unit V 1 µA 0.715 0.855 1 1.25 V 2 pF 6 ns A,May,2011 Typical Characteristics Forward BAS16 Reverse Characteristics Characteristics 1000 300 100 (nA) REVERSE CURRENT IR FORWARD CURRENT 10 Ta=100℃ 100 Ta =2 5℃ Ta =1 00 ℃ 30 IF (mA) 300 3 1 30 10 Ta=25℃ 3 0.3 0.1 0.0 1 0.4 0.8 FORWARD VOLTAGE 1.2 VF 1.6 0 20 (V) 40 REVERSE VOLTAGE 60 VR 80 (V) Power Derating Curve Capacitance Characteristics 1.4 300 Ta=25℃ f=1MHz (mW) PD POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.3 1.2 1.1 200 150 100 50 1.0 0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) A,May,2011