polyfet rf devices LP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Single Ended Package Style AP TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 150 Watts o 1.00 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 9.0 A MAX 55 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 70.0 WATTS OUTPUT ) 12 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 65 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.40 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat 1 Ids = 0.40 mA, Vgs = 0V 3.2 Mho Vds = 10V, Vgs = 5V 0.45 Ohm Vgs = 20V, Ids =12.00 A Saturation Current 20.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 120.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 3.2 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 60.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP702 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L1B 2DIE CAPACITANCE LP702 POUT VS PIN Freq= 500MHz, VDS=28V, Idq=.4A 50 17.00 49 16.00 48 15.00 47 13.00 Efficiency = 60% 43 10.00 1dB compresion = 50W 42 8.00 40 7.00 39 6.00 29 31 33 10 9.00 41 27 Coss 11.00 Gain 25 100 12.00 44 23 Ciss 14.00 Pout 46 45 1000 35 37 Crss 1 0 5 10 39 15 20 25 30 VDS IN VOLTS PIN IN dBm IV CURVE ID & GM VS VGS L1B 2 DIE L1B 2 DIE IV ID, GM vs VG 100 20 18 16 ID ID IN AMPS 14 10 12 10 8 GM 6 1 4 2 0 0 2 4 6 8 10 12 VDS IN VOLTS 14 16 18 20 0.1 vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com