Preliminary Datasheet CR05BM-12A R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 600V - 0.5A - Thyristor Low Power Use Features IT (AV) : 0.5 A VDRM : 600 V IGT : 100 A Planar Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 1 1. Anode 2. Gate 3. Cathode 2 3 3 2 1 Applications Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control application Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Note1 DC off-state voltage Note1 Symbol Voltage class 12 Unit VRRM VRSM VR(DC) VDRM VD(DC) 600 720 480 600 480 V V V V V Notes: 1. With gate to cathode resistance RGK = 1 k. Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate current Junction Temperature Storage temperature Mass R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Symbol IT (RMS) IT (AV) Ratings 0.63 0.4 Unit A A 0.5 A ITSM 8 A I2 t 0.32 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 –40 to +125 –40 to +125 0.23 W W V V A C C g Conditions Commercial frequency, sine half wave 180 conduction, Ta = 54C Commercial frequency, sine half wave 180 conduction, Ta = 30C 50 Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current Typical value Page 1 of 7 CR05BM-12A Preliminary Electrical Characteristics Parameter Repetitive peak reverse current Repetitive peak off-state current Symbol IRRM IDRM Min. — — Typ. — — Max. 0.5 0.5 Unit mA mA On-state voltage VTM — — 1.2 V Tc = 25C, ITM = 1.2 A, instantaneous value Gate trigger voltage VGT — — 0.8 V Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM RGK = 1 k Gate trigger current IGT 1 Note2 — 100Note2 A Tj = 25C, VD = 6 V, Note3 IT = 0.1 A Holding current IH — — 5 mA Rth (j-a) — — 150 C/W Tj = 25C, VD = 12 V, RGK = 1 k Junction to ambient Thermal resistance Test conditions Tj = 125C, VRRM applied Tj = 125C, VDRM applied, RGK = 1 k Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible. Item D E IGT (A) 1 to 50 20 to 100 The above values do not include the current flowing through the 1 k resistance between the gate and cathode. Notes: 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Page 2 of 7 CR05BM-12A Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 10 Surge On-State Current (A) 101 100 1 2 3 Gate Voltage (V) 2 101 102 Gate Trigger Current vs. Junction Temperature PGM = 0.5W VGT = 0.8V (Tj = 25°C) 100 PG(AV) = 0.1W IGT = 100μA (Tj = 25°C) IFGM = 0.3V VGD = 0.2V 10−1 100 101 102 × 100 (%) Gate Characteristics VFGM = 6V 103 Typical Example 102 101 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 Gate Trigger Voltage (V) 4 Conduction Time (Cycles at 60Hz) 101 10−2 10−2 6 On-State Voltage (V) 102 10−1 8 0 0 10 5 4 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10−1 0 Distribution 0.8 Typical Example 0.6 0.4 0.2 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Transient Thermal Impedance (°C/W) On-State Current (A) Ta = 25°C 100 103 101 102 103 10−2 10−1 100 102 101 100 −3 10 Time (s) Page 3 of 7 CR05BM-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 θ 120 360° 80 60 θ = 30° 40 90° 180° 60° 120° 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Resistive, inductive loads Natural convection 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 θ = 30° 90° 60° 120° 180° 0.7 0.6 0.5 0.4 0.3 0.2 θ θ 360° 0.1 0 Resistive loads 0 140 θ 120 θ 360° Resistive loads Natural convection 100 80 60 40 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 θ = 30° 60° 90° 120° 0 180° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) 160 90° 180° θ = 30° 60° 120° 270° DC 0.7 0.6 0.5 0.4 0.3 θ 0.2 360° 0.1 0 Resistive, inductive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Ambient Temperature (°C) 0.8 Average Power Dissipation (W) 140 Average On-State Current (A) 0.8 Average Power Dissipation (W) Ambient Temperature (°C) 160 60° 120° θ = 30° 90° 180° Ambient Temperature (°C) Average Power Dissipation (W) 0.8 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 40 20 0 θ = 30° 0 60° 120° 270° 90° 180° DC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average On-State Current (A) Page 4 of 7 CR05BM-12A Preliminary × 100 (%) Typical Example 140 120 100 80 60 40 20 RGK = 1kΩ 0 –40 160 0 40 80 120 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) 160 Breakover Voltage vs. Gate to Cathode Resistance 120 Typical Example 100 80 60 40 20 Tj = 125°C 0 10−1 100 101 102 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example Holding Current (mA) 140 101 Tj = 125°C RGK = 1kΩ 120 100 80 60 40 Distribution Typical Example IGT(25°C) = 35μA 100 10−1 20 0 0 10 101 102 RGK = 1kΩ 10−2 –40 0 103 40 80 160 120 Rate of Rise of Off-State Voltage (V/μs) Junction Temperature (°C) Holding Current vs. Gate to Cathode Resistance Turn-On Time vs. Gate Current 102 600 Typical Example Typical Example 500 Turn-On Time (μs) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) Breakover Voltage vs. Junction Temperature 400 300 200 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 101 100 100 Tj = 125°C 0 −1 10 100 101 102 Gate to Cathode Resistance (kΩ) R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 10−1 −1 10 100 101 102 Gate Current (mA) Page 5 of 7 CR05BM-12A Preliminary 40 Turn-Off Time (μs) VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ 30 Typical Example 25 Distribution 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) Turn-Off Time vs. Junction Temperature Repetitive Peak Reverse Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –40 0 40 80 160 120 Junction Temperature (°C) × 100 (%) 104 Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example VD = 6V RL = 60Ω Ta = 25°C 102 101 0 10 101 102 103 Gate Current Pulse Width (μs) R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Page 6 of 7 CR05BM-12A Preliminary Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code T920 MASS[Typ.] 0.23g Unit: mm φ5.0Max 11.5Min 5.0Max 4.4 1.25 1.25 3.6 1.1 Circumscribed circle φ0.7 Ordering Information Orderable Part Number (example) CR05BM-12A#B00 CR05BM-12A-D#B00 CR05BM-12A-A6#B00 CR05BM-12A-DA6#B00 CR05BM-12A-TB#B00 CR05BM-12A-DTB#B00 Note: Packing Bag Bag Bag Bag Adhesive Tape Adhesive Tape Quantity 500 pcs. 500 pcs. 500 pcs. 500 pcs. 2000 pcs. 2000 pcs. Remark Straight type Straight type, IGT item: D A6 Lead form A6 Lead form, IGT item: D A8 Lead form A8 Lead form, IGT item: D Please confirm the specification about the shipping in detail. R07DS0992EJ0100 Rev.1.00 Dec 20, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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