Rohm DTB123EK -500ma / -50v digital transistors (with built-in resistors) Datasheet

-500mA / -50V Digital transistors
(with built-in resistors)
DTB123EK
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
DTB123EK
2.9
1.1
0.4
0.8
(3)
1.6
2.8
(2)
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
0.3Min.
 Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : F12
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
 Packaging specifications
 Inner circuit
Package
Packaging type
SMT3
Taping
Code
T146
Basic ordering
unit (pieces)
3000
OUT
R1
IN
R2
Part No.
GND(+)
DTB123EK
OUT
IN
GND(+)
 Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
R1=R2=2.2kΩ
Unit
DTB123EK
Supply voltage
VCC
−50
V
Input voltage
VIN
−12 to +10
V
Output current
IC
−500
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTB123EK
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Input voltage
Output voltage
Symbol
Min.
Typ.
Max.
VI(off)
−
−
−0.5
Unit
VI(on)
−3
−
−
VO(on)
−
−0.1
−0.3
V
Conditions
VCC= −5V, IO= −100μA
V
VO= −0.3V, IO= −20mA
IO/II= −50mA/−2.5mA
II
−
−
−3.8
mA
VI= −5V
IO(off)
−
−
−0.5
μA
VCC= −50V, VI=0V
GI
39
−
Input resistance
R1
1.54
2.2
2.86
kΩ
−
Resistance ratio
R2/R1
0.8
1
1.2
−
−
−
200
−
MHz
Input current
Output current
DC current gain
fT ∗
Transition frequency
−
VO= −5V, IO= −50mA
VCE= −10V, IE= 50mA, f= 100MHz
∗ Characteristics of built-in transistor
 Electrical characteristic curves
-10m
-5m
VO= −0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
-50
-20
-10
-5
-2
Ta=25 C
−40 C
100 C
-1
-500m
-200m
-100m
-0.5m -1m -2m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.1
Ta=100 C
25 C
−40 C
-2m
-1m
-500μ
Input voltage vs. output current
(ON characteristics)
-1
VO= −5V
500
-200μ
-100μ
-50μ
-20μ
-10μ
-5μ
200
100
50
Ta=100 C
25 C
−40 C
20
10
5
2
-2μ
-1μ
-5m -10m -20m
1k
VCC= −5V
DC CURRENT GAIN : GI
-100
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1
-0.5m -1m -2m
Fig.2 Output current vs. input voltage
(OFF characteristics)
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
Fig.3
DC current gain vs. output current
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
-500m
Ta=100 C
25 C
−40 C
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m
-50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4
Output voltage vs. output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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